ADPOW APTM120DA29T

APTM120DA29T
Boost chopper
MOSFET Power Module
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
VBUS
CR1
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
G2
S2
0/VBUS
S2
VBUS
VBUS
SENSE
0/VBUS
OUT
OUT
S2
NTC2
G2
NTC1
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1200
34
25
136
±30
290
780
22
50
3000
Unit
V
A
V
mΩ
W
A
July, 2004
Q2
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM120DA29T– Rev 0
OUT
G2
VDSS = 1200V
RDSon = 290mΩ max @ Tj = 25°C
ID = 34A @ Tc = 25°C
APTM120DA29T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Diode ratings and characteristics
Symbol Characteristic
IF(A V)
Maximum Average Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min
1200
VGS = 0V,VDS = 1200V
T j = 25°C
VGS = 0V,VDS = 1000V
T j = 125°C
VGS = 10V, ID = 17A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
Typ
3
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
VGS = 10V
VBus = 600V
ID = 34A
Typ
10.3
1.54
0.26
374
Unit
V
200
1000
290
5
±150
mΩ
V
nA
Max
Unit
µA
nF
nC
240
20
15
45
1980
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 34A, R G = 2.5Ω
3131
µJ
1371
µJ
1714
Min
Tj = 125°C
Typ
60
2
2.3
1.8
Tj = 25°C
400
Tj = 125°C
470
Tj = 25°C
1200
Tj = 125°C
4000
Tc = 70°C
ns
160
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 34A, R G = 2.5Ω
Test Conditions
50% duty cycle
IF = 60A
IF = 120A
IF = 60A
IF = 60A
VR = 800V
di/dt = 200A/µs
IF = 60A
VR = 800V
di/dt = 200A/µs
Max
48
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 34A
R G = 2.5Ω
Tf
VF
Test Conditions
VGS = 0V, ID = 500µA
Max
Unit
A
2.5
V
ns
nC
July, 2004
IDSS
Characteristic
Drain - Source Breakdown Voltage
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
APT website – http://www.advancedpower.com
2–6
APTM120DA29T– Rev 0
Symbol
BVDSS
APTM120DA29T
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Typ
Transistor
Diode
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To Heatsink
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.16 K
Min
R 25

 1
1 
exp  B25 / 85 
− 
T
T
25



Unit
°C/W
V
150
125
100
4.7
160
M5
Temperature sensor NTC
RT =
2500
-40
-40
-40
Max
0.16
0.9
Typ
68
4080
Max
°C
N.m
g
Unit
kΩ
K
T: Thermistor temperature
RT : Thermistor value at T
APT website – http://www.advancedpower.com
3–6
APTM120DA29T– Rev 0
July, 2004
Package outline
APTM120DA29T
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.18
0.16
0.9
0.14
0.7
0.12
0.1
0.5
0.08
0.3
0.06
0.04
0.1
0.05
0
0.00001
Single Pulse
0.02
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
160
100
80
7V
6.5V
60
40
6V
20
5.5V
5
10
15
20
25
120
100
80
60
TJ=25°C
40
20
5V
0
0
VDS > I D(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
140
ID, Drain Current (A)
TJ=125°C
30
0
ID, DC Drain Current (A)
4
5
6
7
8
9
VGS=20V
0.9
0.8
30
20
10
0
0
20
40
60
ID, Drain Current (A)
80
25
50
75
100
125
150
TC, Case Temperature (°C)
July, 2004
RDS(on) Drain to Source ON Resistance
VGS=10V
1.1
1
3
40
Normalized to
VGS=10V @ 17A
1.2
2
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.3
1
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
1.4
TJ=-55°C
0
APT website – http://www.advancedpower.com
4–6
APTM120DA29T– Rev 0
I D, Drain Current (A)
VGS =15, 10 & 8V
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS =10V
ID=17A
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
1.0
0.9
0.8
0.7
100µs
100
limited by RDS on
1ms
10
10ms
Single pulse
TJ =150°C
1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
Ciss
10000
Coss
1000
Crss
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
14
I D=34A
TJ=25°C
12
10
V DS=240V
VDS=600V
8
V DS =960V
6
4
2
0
0
80
160
240
320
400
480
Gate Charge (nC)
July, 2004
0
1200
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
APT website – http://www.advancedpower.com
5–6
APTM120DA29T– Rev 0
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM120DA29T
APTM120DA29T
Delay Times vs Current
t d(off)
V DS =800V
RG =2.5Ω
T J=125°C
L=100µH
150
60
120
tr and tf (ns)
td(on) and td(off) (ns)
Rise and Fall times vs Current
80
180
V DS=800V
RG =2.5Ω
T J=125°C
L=100µH
90
60
40
tr
20
td(on)
30
0
0
10
20
30
40
50
60
70
10
20
30
40
50
ID, Drain Current (A)
I D, Drain Current (A)
70
7
VDS=800V
RG=2.5Ω
TJ=125°C
L=100µH
5
4
Eon
Switching Energy (mJ)
Switching Energy (mJ)
60
Switching Energy vs Gate Resistance
Switching Energy vs Current
6
Eoff
3
2
1
0
VDS=800V
ID=34A
TJ=125°C
L=100µH
6
5
Eoff
4
Eon
3
2
1
10
20
30
40
50
60
I D, Drain Current (A)
70
0.0
2.5
5.0
7.5 10.0 12.5 15.0 17.5
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
IDR, Reverse Drain Current (A)
225
200
ZCS
175
Frequency (kHz)
tf
150
125
ZVS
100
VDS=800V
D=50%
RG=2.5Ω
T J=125°C
T C=75°C
75
50
25
Hard
switching
0
12
16
20
24
28
ID, Drain Current (A)
32
TJ=150°C
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM120DA29T– Rev 0
July, 2004
8
100