AM4436N Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 4.6 @ VGS = 10V 30 6.8 @ VGS = 4.5V Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology ID (A) 22 18 8 1 2 7 3 6 4 5 o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V 20 Gate-Source Voltage VGS o TA=25 C a Continuous Drain Current o 22 ID TA=70 C b Pulsed Drain Current Continuous Source Current (Diode Conduction) a IDM 60 IS 2.9 o TA=25 C a Power Dissipation o THERMAL RESISTANCE RATINGS Parameter a Maximum Junction-to-Ambient t <= 10 sec Steady State W 2.2 TJ, Tstg Symbol RθJA A 3.1 PD TA=70 C Operating Junction and Storage Temperature Range A 18 -55 to 150 o C Maximum Units 40 80 o o C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM4436_B AM4436N Analog Power o SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) IGSS VDS = VGS, ID = 250 uA Limits Unit Min Typ Max Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A ID(on) Drain-Source On-Resistance Forward Tranconductance Diode Forward Voltage Dynamic IDSS A A rDS(on) g fs VSD 1 3 VDS = 0 V, VGS = 20 V 100 VDS = 24 V, VGS = 0 V 1 5 o VDS = 24 V, VGS = 0 V, T J = 55 C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 4 A VGS = 4.5 V, ID = 2 A VDS = 15 V, ID = 18.6 A IS = 2.3 A, VGS = 0 V 30 V nA uA A 4.6 6.8 90 0.7 mΩ S V b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Qg Qgs Qgd td(on) tr td(off) tf VDS = 15 V, VGS = 4.5 V, ID = 18.6 A VDD = 15 V, RL = 6 Ω , ID = 1 A, VGEN = 10 V 25 6 9 20 13 82 43 nC nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AM4436_B AM4436N Analog Power Typical Electrical Characteristics (N-Channel) 150 VGS =10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 50 4.5V 3.0V 40 30 20 10 12 0 90 60 TA =125oC 30 25oC 1.5 0 0 0.25 0.5 0.75 - 55oC 0 2 1 2 .5 3 3 .5 4 VGS, GATE TO SOURCE VOLTAGE (V) VDS , DRAIN- S OURCE VOLTAGE ( V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 2 .2 6000 CAPACITANCE (pF) 2 1.8 1.6 1.4 4.5V 1.2 1 10V 10 20 30 40 CISS 4000 3000 2000 COSS CRSS 1000 0 0 .8 0 5000 0 50 5 ID, DRAIN CURRENT (A) 15 20 Figure 4. Capacitance R D S ( O N, ) N O R M A L IZ E D D R A I N - S O U R C E O N - R E S IS T A N C E Figure 3. On-Resistance vs. Drain Current 1.8 10 1.6 8 Vgs Voltage ( V ) 10 VDS, DRAIN TO SOUR CE VOLTAGE (V) VGS = 10V 1.4 6 1.2 4 1 2 0.8 0.6 0 0 10 20 30 40 50 -50 60 0 25 50 75 100 125 150 175 TJ, JUNCTIONTEMPERATURE(oC) Gate charge ( nC ) Figure 5. Gate Charge Figure 6. On-Resistance vs. Junction Temperature 3 PRELIMINARY -25 Publication Order Number: DS-AM4436_B AM4436N Analog Power Typical Electrical Characteristics (N-Channel) IS, REVERSE DRAIN CURRENT (A) 100 0.0 14 TA =25oC 10 0 .0 11 TA = 125o C 1 0 .0 0 8 0.1 25o C 0.01 0 .00 5 0.001 0 .0 0 2 0.0001 0 0.2 0.4 0.6 0.8 1 2 1.2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 VSD, BODY DIODE FORWARD VOLT AGE (V) Figure 7. Source-Drain Diode Forward Voltage Figure 8. On-Resistance vs. Gate-to-Source Voltage ID = 250mA P(pk), PEAK TRANSIENT POWER (W) Vth, GATE-SOURCE THRESTHOLD VOLTAGE (V) 50 2.2 2 1.8 1.6 1.4 1.2 1 0.8 -50 -25 0 25 50 75 100 125 150 40 30 20 10 0 0.001 175 0.01 0.1 1 10 100 1000 t 1, TIME ( se c ) TA, AMBIENT TEMPERATURE (oC) Figure 9. Threshold Voltage Figure 10. Single Pulse Power Figure 11. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 0.2 R q JA( t ) = r ( t ) + R q JA D =0 .5 0.1 R q JA = 12 5 C/ W 0.1 0.0 P ( pk) 0.02 t1 0.01 t2 0.01 S I NGLE 0.001 0.0001 0.001 0.01 0.1 t 1 1 10 0 10 0 0 , T I M E ( sec) 4 PRELIMINARY 10 Publication Order Number: DS-AM4436_B AM4436N Analog Power Package Information SO-8: 8LEAD H x 45° 5 PRELIMINARY Publication Order Number: DS-AM4436_B