Analog Power AM4874N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. • • • • PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 11 @ VGS = 10V 30 12 @ VGS = 4.5V Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SO-8 Surface Mount Package Saves Board Space High power and current handling capability Low side high current DC-DC Converter applications ID (A) 16.8 16.1 1 8 2 7 3 6 4 5 o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units VDS 30 Drain-Source Voltage V 20 VGS Gate-Source Voltage o TA=25 C a Continuous Drain Current o TA=70 C b Pulsed Drain Current a Continuous Source Current (Diode Conduction) 16.8 ID IDM 50 IS 2.3 o TA=25 C a Power Dissipation o TA=70 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol t <= 10 sec Steady State RθJA A 3.1 PD W 2.2 TJ, Tstg Operating Junction and Storage Temperature Range A 14.2 o C -55 to 150 Maximum 40 80 Units o C/W C/W o Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 September, 2002 - Rev. A PRELIMINARY Publication Order Number: DS-AM4874_D Analog Power AM4874N o SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) IGSS VDS = VGS, ID = 250 uA Limits Unit Min Typ Max Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A ID(on) Drain-Source On-Resistance Forward Tranconductance A A Diode Forward Voltage Dynamic IDSS rDS(on) g fs VSD 1 VDS = 0 V, VGS = 20 V 100 VDS = 24 V, VGS = 0 V 1 5 o VDS = 24 V, VGS = 0 V, T J = 55 C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 16.8 A VGS = 4.5 V, ID = 16.1 A VDS = 15 V, ID = 16.8 A IS = 2.3 A, VGS = 0 V 40 V nA uA A 11 12 40 0.7 1.1 mΩ S V b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Qg Qgs Qgd t d(on) tr t d(off) tf VDS = 15 V, VGS = 4.5 V, ID = 16.8 A VDD = 15 V, RL = 6 Ω , ID = 1 A, VGEN = 10 V 15 3 5 15 10 54 26 nC nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 September, 2002 - Rev. A PRELIMINARY Publication Order Number: DS-AM4874_D Analog Power AM4874N Typical Electrical Characteristics (N-Channel) 50 ID, DRAIN CURRENT (A) 50 VGS =10V 30 ID, DRAIN CURRENT (A) 4.5V 40 3.0V 20 10 40 30 TA = 125oC -55oC 20 10 0 25oC 0 0.25 0.5 0.75 1 0 VDS , DRAIN-S OURCE VOLTAGE ( V) 1.5 2 Figure 1. Output Characteristics Figure 2. Transfer Characteristics 2 1800 1.8 CAPACITANCE (pF) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4 2400 2.2 1.6 1.4 4.5V 1.2 Ciss 1200 Coss 600 10V 1 Crss 0.8 0 10 20 30 40 0 50 0 ID, DRAIN CURRENT (A) 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 4. Capacitance Figure 3. On-Resistance vs. Drain Current 10 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 8 Vgs Voltage ( V ) 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 6 4 2 0 0 10 20 30 1.4 1.2 1 0.8 0.6 40 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Gate charge ( nC ) Figure 5. Gate Charge Figure 6. On-Resistance vs. Junction Temperature 3 September, 2002 - Rev. A PRELIMINARY VGS = 10V Publication Order Number: DS-AM4874_D Analog Power AM4874N Typical Electrical Characteristics (N-Channel) 0.03 RDS(ON), ON-RESISTANCE (OHM) IS, REVERSE DRAIN CURRENT (A) 100 10 TA = 125oC 1 25oC 0.1 0.01 0.001 0.025 0.02 0.015 TA = 25oC 0.01 0.005 2 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Source-Drain Diode Forward Voltage 6 8 10 Figure 8. On-Resistance vs. Gate-to-Source Voltage 50 2.2 ID = 250mA P(pk), PEAK TRANSIENT POWER (W) Vth, GATE-SOURCE THRESTHOLD VOLTAGE (V) 4 VGS, GATE TO SOURCE VOLTAGE (V) 2 1.8 1.6 1.4 1.2 1 0.8 -50 -25 0 25 50 75 100 125 150 175 40 30 20 10 0 0 .0 0 1 TA, AMBIENT TEMP ERATURE (oC) 0 .1 10 10 0 0 t1, T IME (sec) Figure 9. Threshold Voltage Figure 10. Single Pulse Power Figure 11. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 RqJ A( t ) = r ( t ) + RqJ A D = 0. 5 RqJ A = 12 5 C/ W 0. 2 0.1 0. 1 P (p 0. 05 0.01 t 0 . 02 t 0. 01 T J - T A = P * RqJ A( t ) 0.001 0.0001 SINGLE P ULSE 0.001 D 0.01 0.1 1 10 C 10 0 l D 1/ 2 10 0 0 t1, TIME (s ec) 4 September, 2002 - Rev. A PRELIMINARY Publication Order Number: DS-AM4874_D Analog Power AM4874N Package Information SO-8: 8LEAD H x 45° 5 September, 2002 - Rev. A PRELIMINARY Publication Order Number: DS-AM4874_D