AM4874N - Analog Power

Analog Power
AM4874N
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
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PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
11 @ VGS = 10V
30
12 @ VGS = 4.5V
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
Miniature SO-8 Surface Mount Package
Saves Board Space
High power and current handling capability
Low side high current DC-DC Converter
applications
ID (A)
16.8
16.1
1
8
2
7
3
6
4
5
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
VDS
30
Drain-Source Voltage
V
20
VGS
Gate-Source Voltage
o
TA=25 C
a
Continuous Drain Current
o
TA=70 C
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
16.8
ID
IDM
50
IS
2.3
o
TA=25 C
a
Power Dissipation
o
TA=70 C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
t <= 10 sec
Steady State
RθJA
A
3.1
PD
W
2.2
TJ, Tstg
Operating Junction and Storage Temperature Range
A
14.2
o
C
-55 to 150
Maximum
40
80
Units
o
C/W
C/W
o
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
September, 2002 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM4874_D
Analog Power
AM4874N
o
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
Limits
Unit
Min Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
ID(on)
Drain-Source On-Resistance
Forward Tranconductance
A
A
Diode Forward Voltage
Dynamic
IDSS
rDS(on)
g fs
VSD
1
VDS = 0 V, VGS = 20 V
100
VDS = 24 V, VGS = 0 V
1
5
o
VDS = 24 V, VGS = 0 V, T J = 55 C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 16.8 A
VGS = 4.5 V, ID = 16.1 A
VDS = 15 V, ID = 16.8 A
IS = 2.3 A, VGS = 0 V
40
V
nA
uA
A
11
12
40
0.7
1.1
mΩ
S
V
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
VDS = 15 V, VGS = 4.5 V,
ID = 16.8 A
VDD = 15 V, RL = 6 Ω , ID = 1 A,
VGEN = 10 V
15
3
5
15
10
54
26
nC
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
September, 2002 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM4874_D
Analog Power
AM4874N
Typical Electrical Characteristics (N-Channel)
50
ID, DRAIN CURRENT (A)
50
VGS =10V
30
ID, DRAIN CURRENT (A)
4.5V
40
3.0V
20
10
40
30
TA = 125oC
-55oC
20
10
0
25oC
0
0.25
0.5
0.75
1
0
VDS , DRAIN-S OURCE VOLTAGE ( V)
1.5
2
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2
1800
1.8
CAPACITANCE (pF)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4
2400
2.2
1.6
1.4
4.5V
1.2
Ciss
1200
Coss
600
10V
1
Crss
0.8
0
10
20
30
40
0
50
0
ID, DRAIN CURRENT (A)
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 4. Capacitance
Figure 3. On-Resistance vs. Drain Current
10
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
8
Vgs Voltage ( V )
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
6
4
2
0
0
10
20
30
1.4
1.2
1
0.8
0.6
40
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (oC)
Gate charge ( nC )
Figure 5. Gate Charge
Figure 6. On-Resistance vs. Junction Temperature
3
September, 2002 - Rev. A
PRELIMINARY
VGS = 10V
Publication Order Number:
DS-AM4874_D
Analog Power
AM4874N
Typical Electrical Characteristics (N-Channel)
0.03
RDS(ON), ON-RESISTANCE (OHM)
IS, REVERSE DRAIN CURRENT (A)
100
10
TA = 125oC
1
25oC
0.1
0.01
0.001
0.025
0.02
0.015
TA = 25oC
0.01
0.005
2
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Source-Drain Diode Forward Voltage
6
8
10
Figure 8. On-Resistance vs. Gate-to-Source Voltage
50
2.2
ID = 250mA
P(pk), PEAK TRANSIENT POWER (W)
Vth, GATE-SOURCE THRESTHOLD VOLTAGE (V)
4
VGS, GATE TO SOURCE VOLTAGE (V)
2
1.8
1.6
1.4
1.2
1
0.8
-50
-25
0
25
50
75
100
125
150
175
40
30
20
10
0
0 .0 0 1
TA, AMBIENT TEMP ERATURE (oC)
0 .1
10
10 0 0
t1, T IME (sec)
Figure 9. Threshold Voltage
Figure 10. Single Pulse Power
Figure 11. Normalized Thermal Transient Impedance, Junction-to-Ambient
1
RqJ A( t ) = r ( t ) + RqJ A
D = 0. 5
RqJ A = 12 5 C/ W
0. 2
0.1
0. 1
P (p
0. 05
0.01
t
0 . 02
t
0. 01
T J - T A = P * RqJ A( t )
0.001
0.0001
SINGLE P ULSE
0.001
D
0.01
0.1
1
10
C
10 0
l D
1/
2
10 0 0
t1, TIME (s ec)
4
September, 2002 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM4874_D
Analog Power
AM4874N
Package Information
SO-8: 8LEAD
H x 45°
5
September, 2002 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM4874_D