2N6439 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG The ASI 2N6439 is a Common Emitter Device Designed For Large signal output amplifier stages in the 225-400 MHz range. FEATURES INCLUDE: • Internal Input Matching Network • 30:1 Load VSWR Capability • All Gold Metalization MAXIMUM RATINGS VCB 60 V PDISS 146 W @ TC = 25 °C TSTG -65 °C to +200 °C θJC 1.2 °C/W CHARACTERISTICS SYMBOL 1 = Collector 2 = Base 3 & 4 = Emitter TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 33 V BVCES IC = 50 mA 60 V BVCBO IE = 5.0 mA 4.0 V hFE VCE = 5.0 V COB VCB = 28 V GPe VCE = 28 V IC = 1.0 A 10 f = 1 MHz POUT = 60 W f =225- 400 MHz GPe ηC Ψ VCE = 28 V POUT = 60 W f = 400 MHz 67 7.8 8.5 7.8 10.0 100 --- 75 pF dB 55 % 30:1 --- A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1/1