Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band Minimum Gain = 7.8 dB @ 400 MHz 60 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON • Built–In Matching Network for Broadband Operation Using Double Match Technique • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability Applications CASE 316–01, STYLE 1 MAXIMUM RATINGS* Rating Symbol Value Unit Collector–Emitter Voltage VCEO 33 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 146 0.83 Watts W/°C Storage Temperature Range Tstg – 65 to + 200 °C Symbol Max Unit RθJC 1.2 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS* (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 33 — — Vdc Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 60 — — Vdc Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICBO — — 2.0 mAdc OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 Vdc, IE = 0) NOTE: (continued) 1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. * Indicates JEDEC Registered Data. RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 2N6439 1 ELECTRICAL CHARACTERISTICS* — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit hFE 10 — 100 — Cob — 67 75 pF GPE 7.8 8.5 — dB ON CHARACTERISTICS DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) BROADBAND FUNCTIONAL TESTS (Figure 6) Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 60 W, f = 225 – 400 MHz) ψ Electrical Ruggedness (Pout = 60 W, VCC = 28 Vdc, f = 400 MHz, VSWR 30:1 all phase angles) — No Degradation in Output Power NARROW BAND FUNCTIONAL TESTS (Figure 1) Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 60 W, f = 400 MHz) GPE 7.8 10 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 60 W, f = 400 MHz) η 55 — — % * Indicates JEDEC Registered Data. C8 L2 C1 L1 C7 C11 C4 DUT C5 L3 C2 R1 C1 C4, C11 — 4.0–40 pF C5 C8 — 33 pF C9 — 1000 pF C10 — 5.0 µF R1 — 15 Ω L1, L2 — 3/16″ x 1″ Copper Strap L3 — 1.5 µH L4 — 10 µH L5 — 1 Turn #16 AWG, 5/16″ I.D. C3 L5 C6 L4 C9 C10 VCC = 28 V Figure 1. 400 MHz Test Amplifier (Narrow Band) 2N6439 2 MOTOROLA RF DEVICE DATA NARROW BAND DATA 120 VCC = 28 V VCC = 28 V 80 Pin = 8 W 6W 60 4W 40 20 0 200 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 100 2W 250 300 350 f, FREQUENCY (MHz) 400 f = 225 MHz 100 400 MHz 80 60 40 20 450 0 Figure 2. Pout versus Frequency 6 8 10 12 14 Pin, INPUT POWER (WATTS) 16 18 20 100 Pout = 60 W VCC = 28 V Pout , OUTPUT POWER (WATTS) G PE , COMMON-EMITTER AMPLIFIER POWER GAIN (dB) 4 Figure 3. Output Power versus Input Power 12 11 10 9 8 200 2 250 300 350 f, FREQUENCY (MHz) 400 450 Figure 4. Power Gain versus Frequency f = 400 MHz 80 Pin = 6 W 60 4W 40 20 0 10 14 18 22 VCC, SUPPLY VOLTAGE (VOLTS) 26 30 Figure 5. Output Power versus Supply Voltage Pout , OUTPUT POWER (WATTS) 100 f = 225 MHz 80 Pin = 8 W 60 4W 40 20 0 10 14 18 22 VCC, SUPPLY VOLTAGE (VOLTS) 26 30 Figure 6. Output Power versus Supply Voltage MOTOROLA RF DEVICE DATA 2N6439 3 R1 B C13 C15 + C14 – L1 50 Ω LINE C16 L2 C12 A DUT L5 T2 50 Ω LINE 0.5″ C1 T1 VCC RFC1 L4 0.8″ C8 C3 C4 C2 4:1 A L3 C5 C6 C7 R2 C11 4:1 C17 RFC1 — Ferrite Bead Choke, Feroxcube VK200 19/4B B — Ferroxcube 56-590-65/4B Ferrite Bead T1, T2 — 25 Ohms (UT25) Miniature Coaxial Cable, 1 turn R1 — 11 Ω, 1.0 W R2 — 20 Ω, 1/4 W L1 — 10 Turns, #22 AWG, 1/8″ I.D. L2 — 4 Turns, #16 AWG, 1/4″ I.D. L3 — 6 Turns, #24 AWG, 1/8″ I.D. L4, L5 — 1″ x 0.25″ Microstrip Line Board Material 0.031″ Thick Teflon-Fiberglass C1 — 68 pF C2, C4, C8, C10 — 27 pF C3, C5, C11 — 10 pF C6, C7 — 51 pF C9 — 1.0 – 10 pF JOHANSON C12 — 100 pF C13, C15 — 680 pF C14, C16 — 1.0 µF, 35 V Tantalum C17 — 0.1 µF, ERIE Red Cap ā C9 C10 ā Figure 7. 225 to 400 MHz Broadband Test Circuit Schematic BROADBAND DATA (Circuit, Figure 7) 100 8 6 80 EFFICIENCY (%) G PE , POWER GAIN (dB) 10 Pout = 60 W VCC = 28 V 4 2 0 60 40 20 200 250 300 350 f, FREQUENCY (MHz) 400 Figure 8. Power Gain versus Frequency 2N6439 4 Pout = 60 W VCC = 28 V 0 200 250 300 350 f, FREQUENCY (MHz) 400 Figure 9. Efficiency versus Frequency MOTOROLA RF DEVICE DATA 6 5 Pout = 60 W VCC = 28 V 450 400 INPUT VSWR 0.1 0.2 4 ZOL* 450 f = 225 MHz f = 225 MHz 0.1 Zin 275 Pout = 60 W, VCC = 28 V 350 275 350 400 FREQUENCY MHz ZOL* = Conjugate of the optimum load 225 ZOL* = impedance into which the device 275 ZOL* = output operates at a given output 350 ZOL* = power, voltage and frequency. 400 450 .3 3 2 1 200 250 300 350 f, FREQUENCY (MHz) 400 Figure 10. Input VSWR versus Frequency MOTOROLA RF DEVICE DATA Zin OHMS ZOL* OHMS 0.7 + j1.6 0.9 + j2.2 2.2 + j2.1 1.2 + j0.6 0.5 + j1.6 2.2 – j1.8 2.1 – j0.9 2.1 – j0.1 2.0 + j0.2 1.9 + j0.9 Figure 11. Series Equivalent Input-Output Impedance 2N6439 5 PACKAGE DIMENSIONS F D 4 R NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES. K 3 DIM A B C D E F H J K L N Q R U 1 Q 2 L B C J E N INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495 H U A STYLE 1: PIN 1. 2. 3. 4. EMITTER COLLECTOR EMITTER BASE CASE 316–01 ISSUE D Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 2N6439 6 ◊ *2N6439/D* MOTOROLA RF DEVICE2N6439/D DATA