BLV33 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV33 is a Common Emitter Device Designed for Class A Television Applications. PACKAGE STYLE .500 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 12.5 A VCESM 65 V VCEO 33 V PDISS 132 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 1.5 °C/W CHARACTERISTICS 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE ORDER CODE: ASI10498 TC = 25°C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 33 V BVCES IC = 25 mA 65 V BVEBO IE = 10 mA 4.0 V ICES VCE = 30 V hFE VCE = 25 V Cc VCB = 25 V Cre VCE = 25 V Ccs fT GP IC = 3.0 A 15 f = 1.0 MHz 155 IC = 100 mA f = 1.0 MHz 88 VCE = 25 V IC = 100 mA f = 1.0 MHz 3.0 VCB = 25 V IE = 3.0 A 680 VCB = 25 V IE = 6.0 A 750 VCE = 25 V IC = 3.2 A Pout = 19 W 9.0 9.7 10 mA 100 --- pF MHz --- f = 224.25 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/3 BLV33 FOUND. LERROR! REFERENCE SOURCE NOT Fig. 1 Intermodulation distortion (dim) and power gain as a function of output power. Fig. 2 Cross-modulation distortion (dcm) as a function of output power. Conditions for fig. 1 and 2: Typical values; VCE = 25 V; IC = 3.2 A; Th = 25°C – Th = 70°C; fvision = 224.25 MHz. A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 2/3 BLV33 FOUND. LERROR! REFERENCE SOURCE NOT Fig. 3 VCE = 28 V; IC(ZS) = 100 mA; Th = 70 °C; fvision = 224.25 MHz. Fig. 4 VCE = 28 V; IC(ZS) = 100 mA; Th = 70 °C; fvision = 224.25 MHz; typical values. A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 3/3