ASI MSC8001

MSC8001
HIGH POWER GaAs FET
FEATURES INCLUDE:
•
27.5 dBm Output Power with 7db
Associated Gain at 8 GHz
•
Power Optimized Design Provides
High Power-added Efficiency
•
Large Cross Section Ti/Pt/Au
Gates Enhance Durability and
Reliability
•
Chip Devices are Selected from
Standard Military Grade Wafers
•
Hermetic Metal/Ceramic Package
Suitable for Hi-Rel Applications
•
Custom Electrical Test and
Screening Available for Source
Control Drawings
FET PACKAGE TYPE 30
TRANS1.SYM
RF ELECTRICAL SPECIFICATIONS
SYMBOL
MAG
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
8.5
dB
24
dBm
MAX AVAILABLE GAIN
FREQUENCY
PMAG
O
TA = 25 C
= 8.0 GHz
OUTPUT POWER AT MAG TUNING
FREQUENCY
= 8.0 GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1