MSC8001 HIGH POWER GaAs FET FEATURES INCLUDE: • 27.5 dBm Output Power with 7db Associated Gain at 8 GHz • Power Optimized Design Provides High Power-added Efficiency • Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability • Chip Devices are Selected from Standard Military Grade Wafers • Hermetic Metal/Ceramic Package Suitable for Hi-Rel Applications • Custom Electrical Test and Screening Available for Source Control Drawings FET PACKAGE TYPE 30 TRANS1.SYM RF ELECTRICAL SPECIFICATIONS SYMBOL MAG TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS 8.5 dB 24 dBm MAX AVAILABLE GAIN FREQUENCY PMAG O TA = 25 C = 8.0 GHz OUTPUT POWER AT MAG TUNING FREQUENCY = 8.0 GHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1