DISCRETE SEMICONDUCTORS DATA SHEET BLW34 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal BLW34 area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability properties. The transistor has a 1⁄4" capstan envelope with ceramic cap. QUICK REFERENCE DATA R.F. performance MODE OF OPERATION fvision MHz VCE V IC mA Th °C dim(1) dB Po sync (1) W class-A; linear amplifier 860 25 600 70 −60 > 1,8 > 860 25 600 25 −60 typ. 2,15 typ. Gp dB 9 10,2 Note 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak sync level. PIN CONFIGURATION PINNING - SOT122A. PIN 4 handbook, halfpage 1 3 DESCRIPTION 1 collector 2 emitter 3 base 4 emitter 2 Top view MBK187 Fig.1 Simplified outline. SOT122A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification UHF linear power transistor BLW34 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE = 0 VCESM max. 50 V open base VCEO max. 30 V VEBO max. 4 V d.c. or average IC max. 2,25 A (peak value); f > 1 MHz ICM max. 3,5 A Total power dissipation at Tmb = 25 °C Ptot max. 31 W Storage temperature Tstg Operating junction temperature Tj Emitter-base voltage (open collector) Collector current MGP454 −65 to +150 °C max. MGP455 40 10 200 °C handbook, halfpage handbook, halfpage Ptot (W) IC (A) Th = 70 °C 30 Tmb = 25 °C 1 (1) 20 10−1 10 1 10 VCE (V) 0 102 50 Th (°C) 100 (1) Second breakdown limit (independent of temperature). Fig.2 D.C. SOAR. Fig.3 Power derating curve vs. temperature. THERMAL RESISTANCE (see Fig.4) From junction to mounting base (dissipation = 15 W; Tmb = 79 °C; i.e. Th = 70 °C) From mounting base to heatsink August 1986 3 Rth j-mb = 6,2 K/W Rth mb-h = 0,6 K/W Philips Semiconductors Product specification UHF linear power transistor BLW34 MGP456 10 handbook, full pagewidth Rth j-h (K/W) Th = 125 °C 8 75 °C 100 °C 50 °C 25 °C 6 100 °C 125 °C 150 °C 175 °C Tj = 200 °C 0 °C 75 °C 4 0 Fig.4 10 20 Ptot (W) 30 Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink and junction temperature as parameters. (Rth mb-h = 0,6 K/W.) Example Nominal class-A operation: VCE = 25 V; IC = 600 mA; Th = 70 °C. Fig.4 shows: Rth j-h max. 6,75 K/W Tj max. 170 °C typ. 5,45 K/W typ. 152 °C Typical device: Rth j-h Tj August 1986 4 Philips Semiconductors Product specification UHF linear power transistor BLW34 CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-emitter breakdown voltage VBE = 0; IC = 8 mA V(BR)CES > 50 V open base; IC = 60 mA V(BR)CEO > 30 V V(BR)EBO > 4 V VBE = 0; VCE = 30 V ICES < 2,0 mA VBE = 0; VCE = 30 V; Tj = 175 °C ICES < 5,0 mA hFE > typ. 20 40 hFE < 120 VCEsat typ. 450 mV −IE = 0,6 A; VCB = 25 V fT typ. 3,3 GHz −IE = 1,2 A; VCB = 25 V fT typ. 3,0 GHz Cc typ. 13,5 pF IC = 40 mA; VCE = 25 V Cre typ. 8,4 pF Collector-stud capacitance Ccs typ. 1,2 pF Emitter-base breakdown voltage open collector; IE = 4 mA Collector cut-off current D.C. current gain IC = 600 mA; VCE = 25 V IC = 600 mA; VCE = 25 V; Tj = 175 °C Collector-emitter saturation voltage (1) IC = 1,2 A; IB = 0,12 A Transition frequency at f = 500 MHz (2) Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 25 V Feedback capacitance at f = 1 MHz Notes 1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0,02. 2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0,01. August 1986 5 Philips Semiconductors Product specification UHF linear power transistor BLW34 MGP457 MGP458 75 60 handbook, halfpage handbook, halfpage hFE Cc (pF) VCE = 25 V 50 40 5V 25 20 0 typ 0 0 1 2 IC (A) 3 0 Fig.5 Typical values; Tj = 25 °C. 20 VCB (V) 40 Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 °C. MGP459 4 handbook, full pagewidth fT (GHz) typ 3 2 1 0 1 2 Fig.7 VCB = 25 V; f = 500 MHz; Tj = 25 °C August 1986 6 −IE (A) 3 Philips Semiconductors Product specification UHF linear power transistor BLW34 APPLICATION INFORMATION fvision (MHz) VCE (V) IC (mA) dim (dB) (1) Th (°C) Po sync (W) (1) Gp (dB) 860 25 600 70 −60 > 1,8 > 860 25 600 70 −60 typ. 1,9 typ. 10,2 860 25 600 25 −60 typ. 2,15 typ. 10,2 9 Note 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak sync level. handbook, full pagewidth C1 L1 T.U.T. L2 L6 C5 L7 50 Ω 50 Ω L4 C2 L3 C3 C4 C6 L5 C7 C8 C9 C10 +VBB +VCC C11 C12 C13 MGP460 Fig.8 Test circuit at fvision = 860 MHz. List of components: C1 = C5 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002) C2 = C6 = 1 to 3,5 pF film dielectric trimmer (cat. no. 2222 809 05001) placed 13,5 mm and 46 mm respectively from transistor edge C3 = C4 = 2 pF multilayer ceramic chip capacitor (ATC 100A-2RO-C-PX-50) C7 = C10 = 1 nF chip capacitor C8 = 100 nF polyester capacitor C9 = C12 = 470 nF polyester capacitor C11 = 10 nF polyester capacitor C13 = 3,3 µF/40 V solid aluminium electrolytic capacitor L1 = stripline (9,2 mm × 7,0 mm) L2 = stripline (14,2 mm × 7,0 mm) L3 = micro choke 0,47 µH (cat. no. 4322 057 04770) L4 = stripline (see Fig.9 printed-circuit board layout) L5 = 34 mm straight Cu wire (1,0 mm); height above print 3,3 mm L6 = stripline (41,0 mm × 7,0 mm) L7 = stripline (8,7 mm × 7,0 mm) L1; L2; L4; L6 and L7 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 2,74); thickness 1/16". Component layout and printed-circuit board for 860 MHz test circuit are shown in Fig.9. For bias circuit see Fig.10. August 1986 7 Philips Semiconductors Product specification UHF linear power transistor BLW34 95 handbook, full pagewidth 46 + C9 C12 +VBB L5 C8 L3 C7 C11 C10 L4 +VCC C3 L1 C13 L6 L2 C6 L7 C1 C5 C4 C2 MGP461 Fig.9 Component layout and printed-circuit board for 860 MHz test circuit. The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets. August 1986 8 Philips Semiconductors Product specification UHF linear power transistor BLW34 List of components: +Vs D2 C1 = 100 pF ceramic capacitor R6 C4 C2 = C3 = 100 nF polyester capacitor R1 C4 = 10 µF/25 V solid aluminium electrolytic capacitor +VCC R1 = 150 Ω carbon resistor (0,25 W) D1 R2 = 100 Ω preset potentiometer (0,1 W) TR1 R2 C1 C2 C3 R3 = 82 Ω carbon resistor (0,25 W) R7 +VBB R3 R4 = R5 = 2,2 kΩ carbon resistor (0,25 W) R6 = 2,8 Ω; parallel connection of R8 2 × 5,6 Ω carbon resistors (0,5 W each) R9 R4 R5 R7 = R8 = 820 Ω carbon resistor (0,25 W) R9 = 33 Ω carbon resistor (0,25 W) 0 MGP437 Fig.10 Bias circuit for class-A linear amplifier at fvision = 860 MHz. D1 = BZY88-C3V3 D2 = BY206 TR1 = BD136 MGP462 −50 handbook, full pagewidth 20 dcm (%) dim dim (dB) −60 10 dcm −70 0 0 2 4 Po sync (W) 6 Fig.11 Intermodulation distortion (dim)(1.) and cross-modulation distortion (dcm)(2.) as a function of output power. Typical values; VCE = 25 V; IC = 600 mA; fvision = 860 MHz; − − − Th = 25 °C; Th = 70 °C. Information for wideband application from 470 to 860 MHz available on request. 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak sync level. Intermodulation distortion of input signal ≤ −75 dB. 2. Two-tone test method (vision carrier 0 dB, sound carrier −7 dB), zero dB corresponds to peak sync level. Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from 0 dB to −20 dB. August 1986 9 Philips Semiconductors Product specification UHF linear power transistor BLW34 MGP463 5 MGP464 30 handbook, halfpage handbook, halfpage ri, xi (Ω) RL, XL RL (Ω) 2.5 ri 0 20 xi 10 −2.5 −5 10 XL 102 f (MHz) 0 10 103 Typical values; VCE = 25 V; IC = 600 mA; Th = 70 °C. 102 f (MHz) 103 Typical values; VCE = 25 V; IC = 600 mA; Th = 70 °C. Fig.12 Input impedance (series components). Fig.13 Load impedance (series components). Ruggedness The BLW34 is capable of withstanding a load mismatch (VSWR = 50 through all phases) under the following conditions: MGP465 35 handbook, halfpage f = 860 MHz; VCE = 25 V; IC = 600 mA; Th = 70 °C and PL = 4 W. Gp (dB) 25 15 5 10 102 f (MHz) 103 Typical values; VCE = 25 V; IC = 600 mA; Th = 70 °C. Fig.14 August 1986 10 Philips Semiconductors Product specification UHF linear power transistor BLW34 PACKAGE OUTLINE Studded ceramic package; 4 leads SOT122A D A ceramic BeO metal Q c N1 A D1 w1 M A D2 N M W N3 M1 X detail X H b α 4 L 3 H 1 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 D2 H L M1 M N N1 max. N3 Q W w1 α mm 5.97 4.74 5.85 5.58 0.18 0.14 7.50 7.23 6.48 6.22 7.24 6.93 27.56 25.78 9.91 9.14 3.18 2.66 1.66 1.39 11.82 11.04 1.02 3.86 2.92 3.38 2.74 8-32 UNC 0.381 90° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-04-18 SOT122A August 1986 EUROPEAN PROJECTION 11 Philips Semiconductors Product specification UHF linear power transistor BLW34 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1986 12