PHILIPS BLW34

DISCRETE SEMICONDUCTORS
DATA SHEET
BLW34
UHF linear power transistor
Product specification
August 1986
Philips Semiconductors
Product specification
UHF linear power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
linear u.h.f. amplifiers for television
transmitters and transposers. The
excellent d.c. dissipation
properties for class-A operation are
obtained by means of diffused emitter
ballasting resistors and a multi-base
structure, providing an optimum
temperature profile on the crystal
BLW34
area. The combination of optimum
thermal design and the application of
gold sandwich metallization
realizes excellent reliability
properties.
The transistor has a 1⁄4" capstan
envelope with ceramic cap.
QUICK REFERENCE DATA
R.F. performance
MODE OF OPERATION
fvision
MHz
VCE
V
IC
mA
Th
°C
dim(1)
dB
Po sync (1)
W
class-A; linear amplifier
860
25
600
70
−60
>
1,8
>
860
25
600
25
−60
typ.
2,15
typ.
Gp
dB
9
10,2
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
PIN CONFIGURATION
PINNING - SOT122A.
PIN
4
handbook, halfpage
1
3
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
2
Top view
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
UHF linear power transistor
BLW34
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage
(peak value); VBE = 0
VCESM
max.
50 V
open base
VCEO
max.
30 V
VEBO
max.
4 V
d.c. or average
IC
max.
2,25 A
(peak value); f > 1 MHz
ICM
max.
3,5 A
Total power dissipation at Tmb = 25 °C
Ptot
max.
31 W
Storage temperature
Tstg
Operating junction temperature
Tj
Emitter-base voltage (open collector)
Collector current
MGP454
−65 to +150 °C
max.
MGP455
40
10
200 °C
handbook, halfpage
handbook, halfpage
Ptot
(W)
IC
(A)
Th = 70 °C
30
Tmb = 25 °C
1
(1)
20
10−1
10
1
10
VCE (V)
0
102
50
Th (°C)
100
(1) Second breakdown limit (independent of temperature).
Fig.2 D.C. SOAR.
Fig.3 Power derating curve vs. temperature.
THERMAL RESISTANCE (see Fig.4)
From junction to mounting base
(dissipation = 15 W; Tmb = 79 °C; i.e. Th = 70 °C)
From mounting base to heatsink
August 1986
3
Rth j-mb
=
6,2 K/W
Rth mb-h
=
0,6 K/W
Philips Semiconductors
Product specification
UHF linear power transistor
BLW34
MGP456
10
handbook, full pagewidth
Rth j-h
(K/W)
Th = 125 °C
8
75 °C
100 °C
50 °C
25 °C
6
100 °C
125 °C
150 °C
175 °C
Tj =
200 °C
0 °C
75 °C
4
0
Fig.4
10
20
Ptot (W)
30
Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink
and junction temperature as parameters. (Rth mb-h = 0,6 K/W.)
Example
Nominal class-A operation: VCE = 25 V; IC = 600 mA; Th = 70 °C.
Fig.4 shows:
Rth j-h
max. 6,75 K/W
Tj
max.
170 °C
typ.
5,45 K/W
typ.
152 °C
Typical device: Rth j-h
Tj
August 1986
4
Philips Semiconductors
Product specification
UHF linear power transistor
BLW34
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-emitter breakdown voltage
VBE = 0; IC = 8 mA
V(BR)CES
>
50 V
open base; IC = 60 mA
V(BR)CEO
>
30 V
V(BR)EBO
>
4 V
VBE = 0; VCE = 30 V
ICES
<
2,0 mA
VBE = 0; VCE = 30 V; Tj = 175 °C
ICES
<
5,0 mA
hFE
>
typ.
20
40
hFE
<
120
VCEsat
typ.
450 mV
−IE = 0,6 A; VCB = 25 V
fT
typ.
3,3 GHz
−IE = 1,2 A; VCB = 25 V
fT
typ.
3,0 GHz
Cc
typ.
13,5 pF
IC = 40 mA; VCE = 25 V
Cre
typ.
8,4 pF
Collector-stud capacitance
Ccs
typ.
1,2 pF
Emitter-base breakdown voltage
open collector; IE = 4 mA
Collector cut-off current
D.C. current gain
IC = 600 mA; VCE = 25 V
IC = 600 mA; VCE = 25 V; Tj = 175 °C
Collector-emitter saturation voltage
(1)
IC = 1,2 A; IB = 0,12 A
Transition frequency at f = 500 MHz
(2)
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 25 V
Feedback capacitance at f = 1 MHz
Notes
1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0,02.
2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0,01.
August 1986
5
Philips Semiconductors
Product specification
UHF linear power transistor
BLW34
MGP457
MGP458
75
60
handbook, halfpage
handbook, halfpage
hFE
Cc
(pF)
VCE = 25 V
50
40
5V
25
20
0
typ
0
0
1
2
IC (A)
3
0
Fig.5 Typical values; Tj = 25 °C.
20
VCB (V)
40
Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
MGP459
4
handbook, full pagewidth
fT
(GHz)
typ
3
2
1
0
1
2
Fig.7 VCB = 25 V; f = 500 MHz; Tj = 25 °C
August 1986
6
−IE (A)
3
Philips Semiconductors
Product specification
UHF linear power transistor
BLW34
APPLICATION INFORMATION
fvision (MHz)
VCE (V)
IC (mA)
dim (dB) (1)
Th (°C)
Po sync (W) (1)
Gp (dB)
860
25
600
70
−60
>
1,8
>
860
25
600
70
−60
typ.
1,9
typ.
10,2
860
25
600
25
−60
typ.
2,15
typ.
10,2
9
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
handbook, full pagewidth
C1
L1
T.U.T.
L2
L6
C5
L7
50 Ω
50 Ω
L4
C2 L3
C3
C4
C6
L5
C7
C8
C9
C10
+VBB
+VCC
C11
C12
C13
MGP460
Fig.8 Test circuit at fvision = 860 MHz.
List of components:
C1 = C5 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002)
C2 = C6 = 1 to 3,5 pF film dielectric trimmer (cat. no. 2222 809 05001) placed 13,5 mm and 46 mm
respectively from transistor edge
C3 = C4 = 2 pF multilayer ceramic chip capacitor (ATC 100A-2RO-C-PX-50)
C7 = C10 = 1 nF chip capacitor
C8 = 100 nF polyester capacitor
C9 = C12 = 470 nF polyester capacitor
C11 = 10 nF polyester capacitor
C13 = 3,3 µF/40 V solid aluminium electrolytic capacitor
L1 = stripline (9,2 mm × 7,0 mm)
L2 = stripline (14,2 mm × 7,0 mm)
L3 = micro choke 0,47 µH (cat. no. 4322 057 04770)
L4 = stripline (see Fig.9 printed-circuit board layout)
L5 = 34 mm straight Cu wire (1,0 mm); height above print 3,3 mm
L6 = stripline (41,0 mm × 7,0 mm)
L7 = stripline (8,7 mm × 7,0 mm)
L1; L2; L4; L6 and L7 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric
(εr = 2,74); thickness 1/16".
Component layout and printed-circuit board for 860 MHz test circuit are shown in Fig.9. For bias circuit see Fig.10.
August 1986
7
Philips Semiconductors
Product specification
UHF linear power transistor
BLW34
95
handbook, full pagewidth
46
+
C9
C12
+VBB
L5
C8
L3
C7
C11
C10
L4
+VCC
C3
L1
C13
L6
L2
C6
L7
C1
C5
C4
C2
MGP461
Fig.9 Component layout and printed-circuit board for 860 MHz test circuit.
The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.
August 1986
8
Philips Semiconductors
Product specification
UHF linear power transistor
BLW34
List of components:
+Vs
D2
C1 = 100 pF ceramic capacitor
R6
C4
C2 = C3 = 100 nF polyester capacitor
R1
C4 = 10 µF/25 V solid aluminium electrolytic capacitor
+VCC
R1 = 150 Ω carbon resistor (0,25 W)
D1
R2 = 100 Ω preset potentiometer (0,1 W)
TR1
R2
C1
C2
C3
R3 = 82 Ω carbon resistor (0,25 W)
R7
+VBB
R3
R4 = R5 = 2,2 kΩ carbon resistor (0,25 W)
R6 = 2,8 Ω; parallel connection of
R8
2 × 5,6 Ω carbon resistors (0,5 W each)
R9
R4
R5
R7 = R8 = 820 Ω carbon resistor (0,25 W)
R9 = 33 Ω carbon resistor (0,25 W)
0
MGP437
Fig.10 Bias circuit for class-A linear amplifier at
fvision = 860 MHz.
D1
= BZY88-C3V3
D2
= BY206
TR1 = BD136
MGP462
−50
handbook, full pagewidth
20
dcm
(%)
dim
dim
(dB)
−60
10
dcm
−70
0
0
2
4
Po sync (W)
6
Fig.11 Intermodulation distortion (dim)(1.) and cross-modulation distortion (dcm)(2.) as a function of output power.
Typical values; VCE = 25 V; IC = 600 mA; fvision = 860 MHz; − − − Th = 25 °C;  Th = 70 °C.
Information for wideband application from 470 to 860 MHz available on request.
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
Intermodulation distortion of input signal ≤ −75 dB.
2. Two-tone test method (vision carrier 0 dB, sound carrier −7 dB), zero dB corresponds to peak sync level.
Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from
0 dB to −20 dB.
August 1986
9
Philips Semiconductors
Product specification
UHF linear power transistor
BLW34
MGP463
5
MGP464
30
handbook, halfpage
handbook, halfpage
ri, xi
(Ω)
RL, XL
RL
(Ω)
2.5
ri
0
20
xi
10
−2.5
−5
10
XL
102
f (MHz)
0
10
103
Typical values; VCE = 25 V;
IC = 600 mA; Th = 70 °C.
102
f (MHz)
103
Typical values; VCE = 25 V;
IC = 600 mA; Th = 70 °C.
Fig.12 Input impedance (series components).
Fig.13 Load impedance (series components).
Ruggedness
The BLW34 is capable of withstanding a load mismatch
(VSWR = 50 through all phases) under the following
conditions:
MGP465
35
handbook, halfpage
f = 860 MHz; VCE = 25 V; IC = 600 mA;
Th = 70 °C and PL = 4 W.
Gp
(dB)
25
15
5
10
102
f (MHz)
103
Typical values; VCE = 25 V;
IC = 600 mA; Th = 70 °C.
Fig.14
August 1986
10
Philips Semiconductors
Product specification
UHF linear power transistor
BLW34
PACKAGE OUTLINE
Studded ceramic package; 4 leads
SOT122A
D
A
ceramic
BeO
metal
Q
c
N1
A
D1
w1 M A
D2
N
M
W
N3
M1
X
detail X
H
b
α
4
L
3
H
1
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
D2
H
L
M1
M
N
N1
max.
N3
Q
W
w1
α
mm
5.97
4.74
5.85
5.58
0.18
0.14
7.50
7.23
6.48
6.22
7.24
6.93
27.56
25.78
9.91
9.14
3.18
2.66
1.66
1.39
11.82
11.04
1.02
3.86
2.92
3.38
2.74
8-32
UNC
0.381
90°
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-04-18
SOT122A
August 1986
EUROPEAN
PROJECTION
11
Philips Semiconductors
Product specification
UHF linear power transistor
BLW34
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986
12