PHILIPS BLV33

DISCRETE SEMICONDUCTORS
DATA SHEET
BLV33
VHF linear power transistor
Product specification
Supersedes data of November 1995
1996 Oct 10
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
PINNING - SOT147
FEATURES
• Diffused emitter ballasting resistors for an optimum
temperature profile
PIN
• Gold sandwich metallization ensures excellent
reliability.
APPLICATIONS
SYMBOL
DESCRIPTION
1
c
collector
2
e
emitter
3
b
base
4
e
emitter
• Primarily intended for use in linear VHF amplifiers for
television transmitters and transposers.
handbook, halfpage
2
DESCRIPTION
c
1
NPN silicon planar epitaxial transistor encapsulated in a
1⁄ " 4 fslead SOT147 capstan package with ceramic cap.
16
All leads are isolated from the stud.
b
3
e
4
Top view
MAM270
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance in a common emitter push-pull test circuit.
MODE OF
OPERATION
fvision
(MHz)
VCE
(V)
IC, IC(ZS)
(A)
CW, class-A
224.25
25
3.2
CW, class-AB
224.25
28
0.1
Th
(°C)
dim(1)
(dB)
Po sync(1)
(W)
GP
(dB)
70
−55
>16.5
>9
25
−55
typ. 26
typ. 9.7
typ. 90
typ. 6.5
70
sync compr.(2)
sync in/sync out
(%)
30/25
Notes
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
2. Television service (negative modulation, C.C.I.R. system).
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Oct 10
2
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCESM
collector-emitter voltage
VBE = 0
−
65
V
VCEO
collector-emitter voltage
open base
−
33
V
VEBO
emitter-base voltage
open collector
−
4
V
IC
collector current (DC)
−
12.5
A
IC(AV)
average collector current
−
12.5
A
ICM
peak collector current
f > 1 MHz
−
20
A
Ptot
total power dissipation (DC)
Tmb = 25 °C
−
132
W
Prf
RF power dissipation
f > 1 MHz; Tmb = 25 °C
−
165
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
200
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb(dc)
thermal resistance from junction to
mounting base (DC dissipation)
Pdiss = 80 W; Tmb = 82 °C; Th = 70 °C
1.46
K/W
Rth j-mb(rf)
thermal resistance from junction to
mounting base (RF dissipation)
Pdiss = 80 W; Tmb = 82 °C; Th = 70 °C
1.17
K/W
Rth mb-h
thermal resistance from mounting
base to heatsink
Pdiss = 80 W; Tmb = 82 °C; Th = 70 °C
0.15
K/W
MGG120
102
handbook, halfpage
MGG119
200
handbook, halfpage
Ptot
IC
(A)
(W)
150
(1)
10
(2)
(3)
(2)
100
(1)
50
1
1
10
VCE (V)
102
0
(1) Tmb = 25 °C.
(2) Th = 70 °C.
(3) Second breakdown limit (independent of temperature).
Th (°C)
(1) Continuous DC (including RF class-A) operation.
(2) Continuous RF operation.
Fig.2 DC SOAR.
1996 Oct 10
50
Fig.3 Power derating curves.
3
100
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
MGG121
2.0
handbook, full pagewidth
C
0°
C
0°
Th
(K/W)
=1
8
10
2
Rth j-h
0 °C
1.8
60
°C
40
°C
20 °
C
1.6
0 °C
Tj = 200 °C
1.4
175 °C
150 °C
125 °C
1.2
100 °C
75 °C
1.0
0
50
100
Ptot (W)
150
Rth mb-h = 0.15 K/W.
Fig.4
Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink
and junction temperature as parameters.
Example
Nominal class-A operation: VCE = 25 V; IC = 3.2 A; Th = 70 °C.
Figure 4 shows:
Rth j-h = max. 1.60 K/W
Tj = max. 198 °C.
Typical device:
Rth j-h = typ.1.50 K/W
Tj = typ. 190 °C.
1996 Oct 10
4
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
−
MAX.
−
UNIT
V(BR)CES
collector-emitter breakdown voltage VBE = 0; IC = 25 mA
V(BR)CEO
collector-emitter breakdown voltage open base; IC = 100 mA
33
−
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 10 mA
4
−
−
V
ICES
collector cut-off current
VBE = 0; VCE = 30 V
−
−
1
mA
hFE
DC current gain
VCE = 25 V; IC = 3 A; note 1
15
50
100
VCEsat
collector-emitter saturation voltage
IC = 6 A; IB = 0.6 A; note 1
−
0.75
−
V
fT
transition frequency
VCB = 25 V; IE = −3 A;
f = 100 MHz; note 2
−
680
−
MHz
transition frequency
VCB = 25 V; IE = −6 A;
f = 100 MHz; note 2
−
750
−
MHz
Cc
collector capacitance
VCB = 25 V; IE = ie = 0; f = 1 MHz −
155
−
pF
Cre
feedback capacitance
IC = 100 mA; VCE = 25 V;
f = 1 MHz
−
88
−
pF
Ccs
collector-stud capacitance
−
3
−
pF
Notes
1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0.02.
2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0.01.
1996 Oct 10
5
65
V
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
MGG129
MGG130
600
75
handbook, halfpage
handbook, halfpage
Cc
(pF)
hFE
(1)
400
50
(2)
200
25
0
0
0
5
10
IC (A)
0
15
20
Tj = 25 °C.
(1) VCE = 25 V.
(2) VCE = 5 V.
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
DC current gain as a function of collector
current; typical values.
MGG131
1000
Collector capacitance as a function of
collector-base voltage; typical values.
MGG118
10
handbook, halfpage
40
VCB (V)
handbook, halfpage
fT
(MHz)
800
IC
(A)
(1)
(2)
600
1
400
200
0
−0
−5
−10
IE (A)
10−1
0.5
−15
VCB = 25 V; f = 100 MHz; Tj = 25 °C.
VCE = 25 V.
(1) Th = 70 °C.
(2) Th = 25 °C.
Fig.7
Fig.8
Transition frequency as a function of emitter
current; typical values.
1996 Oct 10
6
1
1.5
VBE (V)
Collector current as a function of
base-emitter voltage; typical values.
2
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
APPLICATION INFORMATION
RF performance in VHF class-A operation (linear power amplifier)
MODE OF
OPERATION
CW, class-A
fvision
(MHz)
VCE
(V)
224.25
IC
(A)
25
3.2
Th
(°C)
dim(1)
(dB)
Po sync(1)
(W)
GP
(dB)
70
−55
>16.5
>9
70
−55
typ. 17.5
typ. 9.3
70
−52
typ. 26.5
typ. 9.3
25
−55
typ. 23
typ. 9.7
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
handbook, full pagewidth
R1
+VBB
C7
+VCC
C4
C9
R2
C8
C12
L4
L3
C5
50 Ω
input
C1
D.U.T.
C10
L1
L6
L2
C2
C3
C14
L5
C6
C11
50 Ω
output
C13
MGG148
Fig.9 Class-A test circuit at fvision = 224.25 MHz.
1996 Oct 10
7
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
List of components used in test circuit (see Figs 9 and 10).
COMPONENT
DESCRIPTION
VALUE
C1, C14
multilayer ceramic chip
capacitor; note 1
680 pF, 500 V
C2, C11, C13
film dielectric trimmer
4 to 40 pF
DIMENSIONS
CATALOGUE No.
2222 809 08002
C3
film dielectric trimmer
2 to 18 pF
2222 809 09003
C4, C9
multilayer ceramic chip
capacitor
680 pF, 50 V
2222 852 13681
C5, C6
multilayer ceramic chip
capacitor; note 1
68 pF, 500 V
C7, C8
multilayer ceramic chip
capacitor
470 nF, 50 V
C10
multilayer ceramic chip
capacitor; note 1
24 pF, 500 V
C12
solid aluminium electrolytic
capacitor
10 µF, 40 V
L1
11⁄2 turns of closely wound
1.6 mm enamelled Cu wire
L2
stripline
30 Ω
L3
microchoke
1 µH
L4
2 turns of 1.1 mm enamelled 27 nH
Cu wire
L5
stripline
L6
2 turns of 1.1 mm enamelled 19 nH
Cu wire
L2, L5
stripline; note 2
R1, R2
carbon resistor
placed 2 mm from
transistor edge
2222 856 48474
int. diameter 4.5 mm
leads 2 × 3 mm
30 Ω
6 mm × 32.7 mm
4322 057 01080
int. diameter 4.5 mm
length 2.9 mm
leads 2 × 5 mm
6 mm × 24 mm
int. diameter 3.5 mm
length 3.5 mm
leads 2 × 5 mm
10 Ω
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. The striplines are on a double Cu-clad printed-circuit board, with epoxy fibre-glass dielectric (εr = 4.5); thickness 1⁄16".
1996 Oct 10
8
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
117
handbook, full pagewidth
50
+VBB
+VCC
C8
C9
C7
C4
R1
L3
C2
50 Ω
input
C12
C5
C11
L4
L2
C1
R2
L5
L1
C10(1)
L6
50 Ω
output
C14
C3
C13
C6
MGG150
Dimensions in mm.
The circuit and the components are on one side of the epoxy fibre-glass board, the other side is unetched copper to serve as earth. Earth connections
are made by hollow rivets. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the
copper on the component side and the ground-plane.
(1) C10 positioned under C11.
Fig.10 Component layout and printed-circuit board for 224.25 MHz class-A test circuit.
1996 Oct 10
9
Philips Semiconductors
Product specification
VHF linear power transistor
−44
dim
handbook, halfpage
BLV33
MGG115
(1)
Gp
(2)
(dB)
MGG116
10
Gp
30
handbook, halfpage
(dB)
−48
8
−52
6
dcm
(%)
20
−56
(2)
4
(1)
(2)
(1)
10
−60
2
dim
−64
10
0
20
30
Po sync (W)
0
40
0
20
Po sync (W)
40
VCE = 25 V; IC = 3.2 A; fvision = 224.25 MHz.
(1) Th = 25 °C.
(2) Th = 70 °C.
VCE = 25 V; IC = 3.2 A; fvision = 224.25 MHz.
(1) Th = 25 °C.
(2) Th = 70 °C.
Fig.11 Intermodulation distortion and power gain
as a functions of output power.
Fig.12 Cross-modulation distortion as a function of
output power.
Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak
sync level (see Fig.11).
Two-tone test method (vision carrier 0 dB, sound carrier −7 dB), zero dB corresponds to peak sync level.
Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from
0 dB to −20 dB (see Fig.12).
Ruggedness in class-A operation
The BLV33 is capable of withstanding a full load mismatch corresponding to VSWR = 50 : 1 through all phases up to
30 W (RMS) or 40 W (PEP) under the following conditions: VCE = 25 V; IC = 3.2 A; Th = 70 °C; f = 224.25 MHz;
Rth mb-h = 0.15 K/W.
1996 Oct 10
10
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
MGG128
2
MGG126
6
handbook, halfpage
handbook, halfpage
ZL
(Ω)
Zi
(Ω)
xi
1
4
ri
RL
0
2
XL
−1
50
150
0
50
250
f (MHz)
150
f (MHz)
250
Class-A operation; VCE = 25 V; IC = 3.2 A; Th = 70 °C.
Class-A operation; VCE = 25 V; IC = 3.2 A; Th = 70 °C.
Fig.13 Input impedance as a function of frequency
(series components); typical values.
Fig.14 Load impedance as a function of frequency
(series components); typical values.
MGG127
30
handbook, halfpage
Gp
(dB)
20
10
0
50
150
f (MHz)
250
Class-A operation; VCE = 25 V; IC = 3.2 A; Th = 70 °C.
Fig.15 Power gain as a function of frequency;
typical values.
1996 Oct 10
11
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
RF performance in VHF class-AB operation (C.W)
MODE OF
OPERATION
f
(MHz)
VCE
(V)
IC, IC(ZS)
(A)
Th
(°C)
CW, class-AB
224.25
28
0.1
70
ηC
(%)
GP
(dB)(1)
typ. 2.60
typ. 55
typ. 7.5
typ. 4.46
typ. 72
typ. 6.5
PL
(W)
IC
(A)
40
90
Note
1. Gain compression point of 1 dB is at typical 90 W (minimum 80 W). Using a 3rd-order amplitude transfer
characteristic, 1 dB compression corresponds with 30 % sync input / 25 % sync output compression in television
service (negative modulation, C.C.I.R. system).
C6
handbook, full pagewidth
+VBB
R1
+VCC
C10
C7
R2
C13
C15
L4
L2
50 Ω
input
C1
C8
C4
C2
C11
D.U.T.
L1
L6
L3
C3
C5
C17
L5
C9
C12
C14
50 Ω
output
C16
MGG145
Fig.16 Class-AB test circuit at fvision = 224.25 MHz.
1996 Oct 10
12
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
List of components used in test circuit (see Fig.16).
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
C1, C17
multilayer ceramic chip
capacitor; note 1
680 pF, 500 V
C2
multilayer ceramic chip
capacitor; note 1
39 pF, 500 V
C3, C16
film dielectric trimmer
2 to 18 pF
C4
multilayer ceramic chip
capacitor; note 1
43 pF, 500 V
C5
film dielectric trimmer
4 to 40 pF
C6, C10
polyester capacitor
330 nF
C7, C13
multilayer ceramic chip
capacitor
680 pF, 50 V
C8, C9
multilayer ceramic chip
capacitor; note 1
68 pF, 500 V
placed 2.5 mm from
transistor edge
C11, C12
multilayer ceramic chip
capacitor; note 1
27 pF, 500 V
placed 7 mm from
transistor edge
C14
film dielectric trimmer
5 to 60 pF
C15
solid aluminium electrolytic
capacitor
10 µF, 40 V
L1
2 turns of 1.6 mm enamelled 25 nH
Cu wire
int. diameter 4.3 mm
length 3.4 mm
leads 2 × 5 mm
L2
4 turns closely wound
1.1 mm enamelled Cu wire
120 nH
int. diameter 6 mm
leads 2 × 5 mm
L3
stripline; note 2
30 Ω
6 mm × 48.8 mm
L4
stripline; note 2
48 Ω
3 mm × 27 mm
at 3 mm from
transistor edge
L5
stripline; note 2
30 Ω
6 × 42.9 mm
L6
2 turns of 1.6 mm enamelled 24 nH
Cu wire
R1, R2
carbon resistor
CATALOGUE No.
2222 809 09003
2222 809 08002
2222 852 13681
2222 809 08003
int. diameter 4 mm
length 3.4 mm
leads 2 × 5 mm
10 Ω
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. The striplines are on a double Cu-clad printed-circuit board, with epoxy fibre-glass dielectric (εr = 4.5); thickness 1⁄16".
1996 Oct 10
13
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
MGG125
MGG117
75
7.5
120
handbook, halfpage
handbook, halfpage
Gp
ηc
(%)
Gp
(dB)
PL
(W)
80
5
50
ηc
40
2.5
0
0
10
20
PS (W)
0
30
50
PL (W)
25
100
VCE = 28 V; IC(ZS) = 0.1 A; Th = 70 °C; fvision = 224.25 MHz.
VCE = 28 V; IC(ZS) = 0.1 A; Th = 70 °C; fvision = 224.25 MHz.
Fig.17 Load power as a function of source power;
typical values.
Fig.18 Power gain and efficiency as functions of
load power; typical values.
Ruggedness in class-AB operation
The BLV33 is capable of withstanding a full load mismatch corresponding to VSWR ≤ 2 through all phases) up to 60 W
(RMS) and 90 W (PEP) under the following conditions: VCE = 28 V; Th = 70 °C; f = 224.25 MHz; Rth mb-h = 0.15 K/W.
1996 Oct 10
14
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
MGG124
2
MGG123
4
handbook, halfpage
handbook, halfpage
Zi
(Ω)
ZL
(Ω)
xi
RL
1
ri
2
0
XL
−1
50
150
f (MHz)
0
50
250
150
f (MHz)
250
Class-AB operation; VCE = 28 V; PL = 80 W (PEP); Th = 70 °C.
Class-AB operation; VCE = 28 V; PL = 80 W (PEP); Th = 70 °C.
Fig.19 Input impedance (series components);
typical values.
Fig.20 Load impedance (series components);
typical values.
MGG122
20
handbook, halfpage
Gp
(dB)
10
0
50
150
f (MHz)
250
Class-AB operation; VCE = 28 V; PL = 80 W (PEP); Th = 70 °C.
Fig.21 Power gain as a function of frequency;
typical values.
1996 Oct 10
15
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
PACKAGE OUTLINE
5.9
5.5
handbook, full pagewidth
(4x)
5.5
0.14
e
6.5
min (4x)
metal
1/4"x 28 UNF
BeO
c
ceramic
29
27
b
1.9
max
11
e
13 max
29
27
MBC850
Dimensions in mm.
Torque on nut: min. 2.3 Nm; max. 2.7 Nm.
Diameter of clearance hole in heatsink: max. 6.4 mm.
Mounting hole to have no burrs at either end.
De-burring must leave surface flat; do not chamfer or countersink either end of hole.
When locking is required an adhesive is preferred instead of a lock washer.
Fig.22 SOT147.
1996 Oct 10
16
13.4
12.6
5.30
4.85
8.3
max
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Oct 10
17
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
NOTES
1996 Oct 10
18
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
NOTES
1996 Oct 10
19
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20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 247 9145, Fax. +7 095 247 9144
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66,
Chung Hsiao West Road, Sec. 1, P.O. Box 22978,
TAIPEI 100, Tel. +886 2 382 4443, Fax. +886 2 382 4444
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1996
SCA52
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127041/1200/01/pp20
Date of release: 1996 Oct 10
Document order number:
9397 750 01033