VHB50-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28S is an NPN power transistor designed for 25 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metalization to provide optimum VSWR capability. PACKAGE STYLE .380 4L STUD .112x45° A B C FEATURES: E E ØC • Common Emitter • PG = 6.0 dB at 50 W/175 MHz • Omnigold™ Metalization System • PG = 7.0 dB at 60 W/150 MHz B D H I J G #8-32 UNC-2A F E MAXIMUM RATINGS IC 6.5 A VCBO 65 V VCEO VEBO 35 V 4.0 V PDISS 75W TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 2.3 °C/W CHARACTERISTICS MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 .175 / 4.45 .750 / 19.05 J ORDER CODE: ASI10730 TC = 25 °C NONETEST CONDITIONS SYMBOL MAXIMUM DIM MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 200 mA 65 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V Cob VCB = 28 V IC = 500 mA 10 f = 1.0 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 2.0 mA 150 --- 80 pF REV. C 1/2 ERROR! REFERENCE SOURCE NOT FOUND. VHB50-28S CHARACTERISTICS NONETEST CONDITIONS SYMBOL PG ηC TC = 25 °C VCE = 28 V PIN = 12 W POUT =50 W f = 175 MHz MINIMUM TYPICAL MAXIMUM 6.0 60 UNITS dB % IMPEDANCE DATA FREQ 150 MHz POUT = 60 W VCE = 28 V ZIN (Ω) 1.0 + J2.0 ZCL (Ω) 4.0 – J3.9 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2