MRF951V3 NPN SILICON RF TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF951V3 is Designed for high gain. Low noise small-signal amplifiers applications up to 2.0 GHz. Dim. Are in mm FEATURES: • Low Noise Figure • High Gain • Omnigold™ Metalization System MAXIMUM RATINGS IC 100 mA VCBO 20 V VCEO 10 V VEBO 1.5 V PDISS 1.0 W @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +150 °C θJC 100 °C/W CHARACTERISTICS SYMBOL Leads 1 and 3 = Emitter 2 = Collector 4 = Base TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 0.1 mA 20 V BVCEO IC = 0.1 mA 10 V ICBO VCB = 10 V 0.1 µA IEBO VEB = 1.0 V 0.1 µA hFE VCE = 6.0 V 200 --- Ccb VCB = 10 V GNF NF50Ω VCE = 6.0 V VCE = 6.0 V IC = 5.0 mA IC = 5.0 mA IC = 5.0 mA 50 f = 1.0 MHz 0.45 f = 1.0 GHz 14 f = 2.0 GHz 9.0 f = 1.0 GHz 1.9 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. pF dB 2.8 dB REV. A 1/1