2SC2585 NPN SILICON RF TRANSISTOR PACKAGE STYLE DESCRIPTION: The 2SC2585 is a Common Emitter Device Designed for Low Niose Amplifier and Medium Power Oscillator Applications up to 8.5 GHz. MAXIMUM RATINGS IC 65 mA VCEO 12 V VCBO 25 V VEB 1.5 V PT 400 mW @ TC = 166 C TJ -65 C to +200 C TSTG -65 C to +200 C O O O O O DIMENSIONS IN MILLIMETERS 1 = BASE 3 = COLLECTOR 2 & 4 = EMITTER O θJC 85 C/W CHARACTERISTICS SYMBOL O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS ICBO VCB = 8.0 V 100 µA IEBO VEB = 1.0 V 100 µA hFE VCE = 8.0 V IC = 7.0 mA 250 --- ft VCE = 8.0 V IC = 20 mA Ccb VCB = 10 V 2 |S21E|| VCE = 8.0 V IC = 20 mA 50 115 GHz f = 1.0 GHz 8.5 f = 1.0 MHz 0.2 f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz 18.0 11.0 6.5 dB 10.0 0.6 pF GNF VCE = 8.0 V IC = 7.0 mA f = 2.0 GHz 11.0 dB MAG VCE = 8.0 V IC = 10 mA f = 2.0 GHz f = 4.0 GHz 15.0 10.0 dB NF VCE = 8.0 V IC = 7.0 mA f = 2.0 GHz 2.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 2.5 dB REV. A 1/1