NE21935 NPN SILICON HI FREQUNCY TRANSISTOR DESCRIPTION: The ASI NE21935 is Designed for general purpose and small signal amplifier and oscillator applications up to 6.0 GHz. PACKAGE STYLE .100 4L PILL FEATURES INCLUDE: • High frequency 8.0 GH • Low noise, 1 dB at 0.5 GHz. MAXIMUM RATINGS: IC 80 mA VCBO 20 V VCEO 10 V VEBO 1.5 V PDISS 580 mW @ TA = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 80 °C/W CHARACTERISTICS 1 = BASE 3 = COLLECTOR 2& 4 = EMITTER TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS ICBO VCB = 8.0 V 1.0 µA IEBO VEB = 1.0 V 1.0 µA hFE VCE = 8.0 V 100 300 --- CCB VCB = 8.0 V 0.4 1.0 pF fT VCE = 8.0 V IC = 20 mA VCE = 8.0 V IC = 20 mA |S21E| IC = 20 mA 30 f = 1.0 MHz 8.0 f = 1.0 GHz f = 2.0 GHz 15.5 8.0 9.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. GHz dB REV. A 1/1