SD1477 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1477 is Designed for 12.5 V, Class C High-Band Applications up to 175 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 6.0 dB at 100 W/175 MHz • Omnigold™ Metalization System 2x ØN FU LL R D B MAXIMUM RATINGS G IC 20 A VCBO 36 V VCEO VCES M K H J I L D IM M IN IM U M inche s / m m M AX IM U M inche s / m m A .150 / 3.43 .160 / 4.06 18 V B C .210 / 5.33 .220 / 5.59 36 V D .835 / 21.21 .865 / 21.97 VEBO 4.0 V PDISS 270 W @ TC = 25 °C .045 / 1.14 E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 .007 / 0.18 .125 / 3.18 H .725 / 18.42 I -65 °C to +200 ° C TJ E .725/18,42 F J .970 / 24.64 .980 / 24.89 K .090 / 2.29 .105 / 2.67 L .150 / 3.81 .170 / 4.32 .120 / 3.05 .135 / 3.43 .285 / 7.24 M TSTG -65 °C to +150 °C θJC 0.65 °C/W CHARACTERISTICS N TC = 25 °C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 18 V BVCES IC = 100 mA 36 V BVCBO IC = 50 mA 36 V BVEBO IE = 10 mA 4.0 V ICES VCE = 15 V hFE VCE = 5.0 V COB VCB = 12.5 V PG ηC VCC = 12.5 V 15 IC = 5.0 A 10 --- f = 1.0 MHz POUT = 100 W f = 175 MHz 420 6.0 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. mA pF dB % REV. B 1/1