ASI SD1477

SD1477
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1477 is Designed for
12.5 V, Class C High-Band
Applications up to 175 MHz.
PACKAGE STYLE .500 6L FLG
FEATURES:
A
C
• Internal Input Matching Network
• PG = 6.0 dB at 100 W/175 MHz
• Omnigold™ Metalization System
2x ØN
FU LL R
D
B
MAXIMUM RATINGS
G
IC
20 A
VCBO
36 V
VCEO
VCES
M
K
H
J
I
L
D IM
M IN IM U M
inche s / m m
M AX IM U M
inche s / m m
A
.150 / 3.43
.160 / 4.06
18 V
B
C
.210 / 5.33
.220 / 5.59
36 V
D
.835 / 21.21
.865 / 21.97
VEBO
4.0 V
PDISS
270 W @ TC = 25 °C
.045 / 1.14
E
.200 / 5.08
.210 / 5.33
F
.490 / 12.45
.510 / 12.95
G
.003 / 0.08
.007 / 0.18
.125 / 3.18
H
.725 / 18.42
I
-65 °C to +200 ° C
TJ
E
.725/18,42
F
J
.970 / 24.64
.980 / 24.89
K
.090 / 2.29
.105 / 2.67
L
.150 / 3.81
.170 / 4.32
.120 / 3.05
.135 / 3.43
.285 / 7.24
M
TSTG
-65 °C to +150 °C
θJC
0.65 °C/W
CHARACTERISTICS
N
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 100 mA
18
V
BVCES
IC = 100 mA
36
V
BVCBO
IC = 50 mA
36
V
BVEBO
IE = 10 mA
4.0
V
ICES
VCE = 15 V
hFE
VCE = 5.0 V
COB
VCB = 12.5 V
PG
ηC
VCC = 12.5 V
15
IC = 5.0 A
10
---
f = 1.0 MHz
POUT = 100 W
f = 175 MHz
420
6.0
60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
mA
pF
dB
%
REV. B
1/1