ASI TPV595

TPV595
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The TPV595 is Designed for Class AB
PACKAGE STYLE .250 BAL FLG
.020 x 45°
Push Pull, Common Emitter from 470
to 860 MHz Applications.
Collector - 2 places
A
B
Ø .130 N O M .
.05 0 x 45°
E
C
N
D
Emitter connected to flange
FEATURES:
• Gold Metalization
F
I
J
MAXIMUM RATINGS
B
O
65 W @ TC = 25 C
O
-50 C to +200 C
θJC
2.5 OC/W
CHARACTERISTICS
SYMBOL
.065 / 1.65
.125 / 3.18
D
.243 / 6.17
.255 / 6.48
E
.630 / 16.00
.670 / 17.01
.092 / 2.34
G
.555 / 14.10
.565 / 14.35
H
.739 / 18.77
.750 / 19.05
I
.315 / 8.00
.3 27 / 8.31
J
.002 / 0.05
.006 / 0.15
K
.055 / 1.40
.065 / 1.65
L
.075 1.91
.0 95 / 2.41
.190 / 4.83
N
.24 5 / 6 .22
.257 / 6.53
O
TC = 25 C
NONETEST CONDITIONS
BVCEO
IC = 40 mA
BVCER
IC = 20 mA
BVCBO
IC = 20 mA
ICBO
VCB = 20 V
BVEBO
IE = 5 mA
hFE
VCE = 20 V
COB
VCB = 25 V
PG
VCE = 25 V
F = 860 MHz
Vision = -8 dB
IMD3
.055 / 1.40
M
O
TSTG
inches / m m
.0 60 / 1 .52
F
-50 OC to +200 OC
TJ
inches / m m
C
45 V
M
M A X IM U M
M IN IM U M
A
2 x 2.6 A
PDISS
L
K
D IM
VCB
Base - 2 places
H
• Emitter Ballast Resistors
• Internal Input Matching
IC
G
MINIMUM TYPICAL MAXIMUM
25
RBE = 51 Ω
28
V
40
V
45
V
5.0
IC = 500 mA
Sound = -7 dB
PREF = 14 W
mA
3.0
V
10
-20
IC = 2 x 900 mA
UNITS
8.5
9.5
SB = -16 dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
pF
dB
-47
dB
REV. A
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