VHB125-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB125-28 is NPN RF power transistor designed primarily for VHF communications. It utilizes Emitter ballasting to provide high VSWR handling capability. PACKAGE STYLE .500 6L FLG FEATURES: C A 2 1 2x ØN FU LL R • CE configuration, 28 V operation • Internal Input Matching Network • PG = 9.2 dB at 125 W/175 MHz • Omnigold™ Metalization System • High VSWR capability D 3 B 4 E .725/18,42 F G M K H MAXIMUM RATINGS IC 20 A VCBO 65 V 36 V I L D IM M IN IM UM inches / m m inches / m m A .150 / 3.43 .160 / 4.06 M AXIM U M .045 / 1.14 B VCEO J C .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 VCES 65 V VEBO 4.0 V I J .970 / 24.64 .980 / 24.89 270 W @ TC = 25 °C K .090 / 2.29 .105 / 2.67 L .150 / 3.81 TJ -65 °C to +200 °C M TSTG -65 °C to +150 °C θJC 0.65 °C/W PDISS .725 / 18.42 .120 / 3.05 N .135 / 3.43 2 & 4 = EMITTER 3 = BASE ORDER CODE: ASI10731 TC = 25 °C NONETEST CONDITIONS SYMBOL .170 / 4.32 .285 / 7.24 1 = COLLECTOR CHARACTERISTICS .007 / 0.18 .125 / 3.18 H MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 mA 65 V BVCES IC = 100 mA 65 V BVCEO IC = 100 mA 35 BVEBO IE = 10 mA 4.0 ICES VCE = 30 V hFE VCE = 5.0 V IC = 5.0 A 20 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. V 15 mA 200 --REV. C 1/2 ERROR! REFERENCE SOURCE NOT FOUND. VHB125-28 CHARACTERISTICS TC = 25 °C NONETEST CONDITIONS SYMBOL COB VCB = 28 V PG ηC VCE = 28 V PIN = 15 W MINIMUM TYPICAL MAXIMUM f = 1.0 MHz POUT = 125 W f = 138-175 MHz 250 9.0 55 UNITS pF dB % IMPEDANCE DATA FREQ 136 MHz 160 MHz 175 MHz POUT = 125 W VCE = 28 V ZIN (Ω Ω) ZCL (Ω Ω) 0.48 – j0.3 0.40 – j0.97 0.35 – j1.05 1.35 + j1.92 1.0 + j1.5 0.85 + j1.08 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2