CHENMKO CHEMT18PT

CHENMKO ENTERPRISE CO.,LTD
CHEMT18PT
SURFACE MOUNT
Dual Silicon Transistor
VOLTAGE 12 Volts
CURRENT 0.5 Ampere
APPLICATION
* Small Signal Amplifier .
FEATURE
* Small surface mounting type. (SOT-563)
* Low saturation voltage VCE(sat)=-0.25V(max.)(IC=200mA)
* Low cob. Cob=6.5pF(Typ.)
SOT-563
* PC= 150mW (Total),120mW per element must not be exceeded.
* High saturation current capability.
(1)
(5)
* Two the 2SA2018 in one package.
0.50
0.9~1.1
* PNP Silicon Transistor
1.5~1.7
0.50
(3)
0.15~0.3
MARKING
(4)
1.1~1.3
* T8
0.5~0.6
0.09~0.18
CIRCUIT
6
4
1.5~1.7
1
SOT-563
Dimensions in millimeters
3
2SA2018 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
Collector-base voltage
−
-15
V
VCEO
Collector-emitter voltage
−
-12
V
VEBO
Emitter-base voltage
−
-6
V
−
-500
NOTE.1
−
-1000
NOTE.2
−
150
+150
IC
ICP
DC Output current
Pc
power dissipation
TSTG
Storage temperature
−55
TJ
Junction temperature
−
150
mA
mW
O
C
O
C
Note
1. Single Pulse Pw=1ms
2. 120mW per element must not be exceeded
Each teminal mounted on a recommended land.
2004-07
RATING CHARACTERISTIC CURVES ( CHEMT18PT )
2SA2018 CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
CONDITIONS
MIN.
BVCEO Collector-emitter breakdown voltage
IC=-1mA
-12
−
−
V
BVCBO Collector-base breakdown voltage
IC=-10uA
-15
−
−
V
Emitter-base breakdown voltage
IE=-10uA
-6
−
V
Collector cut-off current
VCB=-15V
−
−
−
-100
nA
VEB=-6V
−
−
nA
VCE=-2V,IC=-10mA
IC=-200mA,IB=-10mA
270
−
-100
680
-250
mV
−
pF
MHz
BVEBO
ICBO
IEBO
hFE
VCE(sat)
Cob
fT
PARAMETER
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Note
1.Pulse test: tp≤300uS; δ≤0.02.
VCB=-10V,IE=0mA,f=1MHZ
VCE=-2V,IE=10mA,f=100MHZ
−
−
−
TYP.
-100
6.5
260
MAX.
−
UNIT
−
RATING CHARACTERISTIC CURVES ( CHEMT18PT )
2SA2018 Typical Electrical Characteristics
Fig.2 DC current gain vs. collector
current
Fig.1 Ground emitter propagation
characteristics
1000
VCE=2V
pulsed
O
O
DC CURRENT GAIN : hFE
100
Ta=25 C
O
O
Ta=-40 C
10
1
O
O
-40 C
100
10
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1
1.4
1000
O
Ta=25 C
pulsed
100
O
Ta=125 C
O
Ta=25 C
10
O
Ta=-40 C
1
1
10
100
COLLECTOR CURRENT : IC (mA)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
Fig.3 Collector-emitter saturation voltage
vs. collector current ( I )
10
100
1000
COLLECTOR CURRENT : IC(mA)
BASE TO EMITTER VOLTAGE : VBE(V)
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
VCE=2V
pulsed
Ta=125 C
25 C
Ta=125 C
COLLECTOR CURRENT : IC(mA)
1000
Fig.4 Collector-emitter saturation voltage
vs. collector current ( II )
1000
IC/IB=20
pulsed
100
O
Ta=125O C
Ta=25 C
O
Ta=-40 C
10
1
1
10
100
COLLECTOR CURRENT : IC (mA)
1000
RATING CHARACTERISTIC CURVES ( CHEMT18PT )
2SA2018 Typical Electrical Characteristics
1000
EMITTER INPUT CAPACITANCE : Cib (pF)
1000
IC/IB=20
pulsed
Ta=-40OOC
Ta=25 C
O
Ta=125 C
100
10
1
1
10
100
1000
COLLECTOR CURRENT : IC(mA)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Fig.6 Gain bandwidth product vs.
collector current
TRANSITION FREQUENCY : fT(MHZ)
BASER SATURATION VOLTAGE : VBE(sat)(mV)
Fig.5 Base-emitter saturation voltage
vs. collector current
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
1000
IE=0A
f=1MHOZ
Ta=25 C
100
Cib
10
Cob
1
1
10
100
1000
COLLECTOR TO BASE VOLTAGE : VCB(V)
VCE=2V
O
Ta=25 C
pulsed
100
10
1
1
10
100
EMITTER CURRENT : IE(mA)
1000