CHENMKO ENTERPRISE CO.,LTD CHEMT18PT SURFACE MOUNT Dual Silicon Transistor VOLTAGE 12 Volts CURRENT 0.5 Ampere APPLICATION * Small Signal Amplifier . FEATURE * Small surface mounting type. (SOT-563) * Low saturation voltage VCE(sat)=-0.25V(max.)(IC=200mA) * Low cob. Cob=6.5pF(Typ.) SOT-563 * PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current capability. (1) (5) * Two the 2SA2018 in one package. 0.50 0.9~1.1 * PNP Silicon Transistor 1.5~1.7 0.50 (3) 0.15~0.3 MARKING (4) 1.1~1.3 * T8 0.5~0.6 0.09~0.18 CIRCUIT 6 4 1.5~1.7 1 SOT-563 Dimensions in millimeters 3 2SA2018 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO Collector-base voltage − -15 V VCEO Collector-emitter voltage − -12 V VEBO Emitter-base voltage − -6 V − -500 NOTE.1 − -1000 NOTE.2 − 150 +150 IC ICP DC Output current Pc power dissipation TSTG Storage temperature −55 TJ Junction temperature − 150 mA mW O C O C Note 1. Single Pulse Pw=1ms 2. 120mW per element must not be exceeded Each teminal mounted on a recommended land. 2004-07 RATING CHARACTERISTIC CURVES ( CHEMT18PT ) 2SA2018 CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL CONDITIONS MIN. BVCEO Collector-emitter breakdown voltage IC=-1mA -12 − − V BVCBO Collector-base breakdown voltage IC=-10uA -15 − − V Emitter-base breakdown voltage IE=-10uA -6 − V Collector cut-off current VCB=-15V − − − -100 nA VEB=-6V − − nA VCE=-2V,IC=-10mA IC=-200mA,IB=-10mA 270 − -100 680 -250 mV − pF MHz BVEBO ICBO IEBO hFE VCE(sat) Cob fT PARAMETER Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Transition frequency Note 1.Pulse test: tp≤300uS; δ≤0.02. VCB=-10V,IE=0mA,f=1MHZ VCE=-2V,IE=10mA,f=100MHZ − − − TYP. -100 6.5 260 MAX. − UNIT − RATING CHARACTERISTIC CURVES ( CHEMT18PT ) 2SA2018 Typical Electrical Characteristics Fig.2 DC current gain vs. collector current Fig.1 Ground emitter propagation characteristics 1000 VCE=2V pulsed O O DC CURRENT GAIN : hFE 100 Ta=25 C O O Ta=-40 C 10 1 O O -40 C 100 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1 1.4 1000 O Ta=25 C pulsed 100 O Ta=125 C O Ta=25 C 10 O Ta=-40 C 1 1 10 100 COLLECTOR CURRENT : IC (mA) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) Fig.3 Collector-emitter saturation voltage vs. collector current ( I ) 10 100 1000 COLLECTOR CURRENT : IC(mA) BASE TO EMITTER VOLTAGE : VBE(V) COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) VCE=2V pulsed Ta=125 C 25 C Ta=125 C COLLECTOR CURRENT : IC(mA) 1000 Fig.4 Collector-emitter saturation voltage vs. collector current ( II ) 1000 IC/IB=20 pulsed 100 O Ta=125O C Ta=25 C O Ta=-40 C 10 1 1 10 100 COLLECTOR CURRENT : IC (mA) 1000 RATING CHARACTERISTIC CURVES ( CHEMT18PT ) 2SA2018 Typical Electrical Characteristics 1000 EMITTER INPUT CAPACITANCE : Cib (pF) 1000 IC/IB=20 pulsed Ta=-40OOC Ta=25 C O Ta=125 C 100 10 1 1 10 100 1000 COLLECTOR CURRENT : IC(mA) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Fig.6 Gain bandwidth product vs. collector current TRANSITION FREQUENCY : fT(MHZ) BASER SATURATION VOLTAGE : VBE(sat)(mV) Fig.5 Base-emitter saturation voltage vs. collector current Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 1000 IE=0A f=1MHOZ Ta=25 C 100 Cib 10 Cob 1 1 10 100 1000 COLLECTOR TO BASE VOLTAGE : VCB(V) VCE=2V O Ta=25 C pulsed 100 10 1 1 10 100 EMITTER CURRENT : IE(mA) 1000