CHENMKO ENTERPRISE CO.,LTD CHT5889PT SURFACE MOUNT PNP Switching Transistor VOLTAGE 20 Volts CURRENT 3 Ampere FEATURE * Small surface mounting type. (SOT-23) * Low Collector-Emitter saturation voltage. .019 (0.50) .066 (1.70) .119 (3.04) MARKING .110 (2.80) .082 (2.10) (1) (3) (2) .055 (1.40) .047 (1.20) CIRCUIT C (3) E (2) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) * 5889 .045 (1.15) .033 (0.85) .002 (0.05) CONSTRUCTION * PNP Silicon Transistor .018 (0.30) .041 (1.05) .033 (0.85) SOT-23 (1)B SOT-23 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − -20 V VCEO collector-emitter voltage open base − -20 V VEBO emitter-base voltage open collector − -7 V IC collector current DC − -3.0 A ICP collector current (Pulse) − -5.0 A − -0.3 A − 460 mW IB base current Ptot total power dissipation Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C Tamb ≤ 25 °C; note 1 2008-01 Note 2 1. FR-4 @ 100mm ,1 oz. copper traces. RATING CHARACTERISTIC CURVES ( CHT5889PT ) ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise noted. SYMBOL BVCBO PARAMETER CONDITIONS collector-base breakdown voltage IE = 0; IC =-100 uA MIN. -20 − MAX. V UNIT BVCEO collector-emitter breakdown voltage IB = 0; IC =-10 mA -20 − V BV EBO emitter-base breakdown voltage IC = 0; IE =-100 uA -7 − V ICBO collector cut-off current IE = 0; VCB = - 20 V − -100 nA IEBO emitter cut-off current IC = 0; VEB = - 7 V − -100 nA hFE DC current gain VCE = -2V; IC = -500 mA VCE = -2V; IC = -1600mA 200 100 500 − VCEsat collector-emitter saturation voltage IC = -1600 mA, IB=-53 mA − -190 mV V BEsat base-emitter saturetion voltage IC = -1600 mA, IB=-53 mA − -1.1 V Cc collector capacitance IE = ie = 0; VCB =-10 V ; f = 1 MHz − 40Typ. pF fT transition frequency IE = 500 mA; VCE = - 2 V ; − 160Typ. MHz RATING CHARACTERISTIC CURVES ( CHT5889PT ) Figure 1. Grounded Emitter Propagation Characteristics Figure 2. Collector-Emitter Saturation Voltage vs Collector Current 1.0 VCE=-2V COLLECTOR SATURATION VOLTAGE, -VCEsat(V) COLLECTOR CURRENT, -IC(mA) 10000 o Ta = 25 C 1000 100 10 1.0 0.5 0.6 0.7 0.8 0.9 1.0 1.1 BASE-EMITTER on VOLTAGE, -VBE(on)(V) Figure 3. DC Current Gain DC CURRENT GAIN, hFE VCE=-2.0V Ta = 25oC 100 0.01 0.1 1.0 COLLECTOR CURRENT, -IC(A) 0.1 Ta = 25oC 0.01 0.001 0.01 0.1 COLLECTOR CURRENT, -IC(A) 1000 10 0.001 IC/IB=30 10 1.0