CHENMKO CHEMZ8PT

CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Dual Silicon Transistor
NPN:VOLTAGE 60 Volts
PNP:VOLTAGE 15 Volts
CHEMZ8PT
CURRENT 150 mAmpere
CURRENT 500 mAmpere
APPLICATION
* Small Signal Amplifier .
FEATURE
* Small surface mounting type. (SOT-563)
SOT-563
* PC= 150mW (Total),120mW per element must not be exceeded.
* High saturation current capability.
* Both the 2SC2412K & 2SA2018 in one package.
* NPN / PNP Silicon Transistor
(1)
(5)
0.50
0.9~1.1
1.5~1.7
0.50
0.15~0.3
(4)
(3)
MARKING
1.1~1.3
* Z8
0.5~0.6
0.09~0.18
CIRCUIT
3
1
4
6
1.5~1.7
SOT-563
Dimensions in millimeters
2SC2412K LIMITING VALUES
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
SYMBOL
MIN.
MAX.
UNITS
Collector - Base Voltage
RATINGS
Open Emitter
CONDITION
VCBO
-
60
Volts
Collector - Emitter Voltage
Open Base
VCEO
-
50
Volts
Emitter - Base Voltage
Open Collector
VEBO
-
7
Volts
IC
-
150
mAmps
Peak Collector Current
ICM
-
150
mAmps
Peak Base Current
IBM
-
15
mAmps
PTOT
-
150
mW
TSTG
-55
+150
o
C
C
C
Collector Current DC
Total Power Dissipation
TA ≤ 25OC; Note 1
Storage Temperature
Junction Temperature
Operating Ambient Temperature
TJ
-
+150
o
TAMB
-55
+150
o
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2004-07
2SA2018 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−
-15
V
Collector-emitter voltage
-
-12
V
Emitter-base voltage
-
-6
V
-
-500
-
-1000
-
150
VCBO
Collector-base voltage
VCEO
VEBO
IC
mA
DC Output current
NOTE.1
ICP
Pc
power dissipation
TSTG
Storage temperature
-55
+150
TJ
Junction temperature
-
150
mW
O
C
O
C
Note
1. Single Pulse Pw=1ms
2SC2412K CHARACTERISTICS
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
SYMBOL
MIN.
TYPE
MAX.
UNITS
Collector-base breakdown voltage
PARAMETERS
IC=50uA
CONDITION
BVCBO
60
-
-
Volts
Collector-emitter breakdown voltage
IC=1mA
BVCEO
50
-
-
Volts
Emitter-base breakdown voltage
IE=50uA
BVEBO
7
-
-
Volts
Collector Cut-off Current
IE=0; VCB=60V
ICBO
-
-
0.1
Emitter Cut-off Current
IC=0; VEB=7V
ICEO
-
-
0.1
DC Current Gain
VCE=6V
IC=1mA
hFE
120
-
560
Collector-Emitter Saturation Voltage
IC=50mA; IB=5mA
VCEsat
-
-
0.4
Volts
Output Collector Capacitance
IE=ie=0; VCB=12V;
f=1MHz
Cob
-
2
3.5
pF
Transition Frequency
IC=2mA; VCE=12V;
f=100MHz
fT
-
180
-
MHz
uA
2SA2018 CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BVCEO
Collector-emitter breakdown voltage
IC=-1mA
-
-12
V
BVCBO
Collector-base breakdown voltage
IC=-10uA
-15
-
-
V
BVEBO
Emitter-base breakdown voltage
IE=-10uA
-6
-
ICBO
Collector cut-off current
VCB=-15V
-
-
-100
nA
IEBO
Emitter cut-off current
VEB=-6V
-
-
-100
nA
hFE
DC current gain
VCE=-2V,IC=-10mA
270
-
IC=-200mA,IB=-10mA
-
-100
-250
mV
VCB=-10V,IE=0mA,f=1MHZ
-
6.5
-
pF
VCE=-2V,IE=10mA,f=100MHZ
-
260
-
MHz
VCE(sat)
Collector-emitter saturation voltage
Cob
Collector output capacitance
fT
Transition frequency
V
680
−
RATING CHARACTERISTIC CURVES ( CHEMZ8PT )
2SC2412K Typical Electrical Characteristics
100
COLLECTOR CURRENT : IC (mA)
VCE=6V
20
10
2
1
25 ΟC
55 OC
Ta=100 OC
5
0.5
0.2
mA
0.45 A
0.40m
A
m
35
0.
0.30mA
0.25mA
60
0.20mA
0.15mA
40
0.10mA
20
0
VCE=5V
Ta=100OC
25OC
200
-55OC
100
50
20
10
0.2
0.5 1
2
5
10 20
50 100 200
Ta=25
IC/IB=50
20
10
0.1
0.05
0.02
0.01
0.2
2
5
10
20
50
EMITTER CURRENT : IE (mA)
100
BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps)
100
1
0.5 1
2
5
10
20
50 100
100
50
20
10
0.2
0.5
1
2
5
EMITTER CURRENT : IE (mA)
2
5
10 20
50 100 200
0.5
IC/IB=10
0.2
0.1
Ta=100OC
25OC
-55OC
0.05
0.02
0.01
0.2
0.5 1
2
5
10
20
50 100 200
COLLECTOR CURRENT : IC (mA)
Ta=25OC
f=32MHZ
VCB=6V
200
0.5 1
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current
Fig.8 Base-collector time constant
vs. emitter current
200
50
10
0.2
2.0
COLLECTOR CURRENT : IC (mA)
Ta=25O
VCE=6V
100
IB=0A
1.6
VCE=5V
3V
1V
200
20
0.2
Fig.7 Gain bandwidth product vs.
emitter current
50
0.5
1.2
0.5
COLLECTOR CURRENT : IC (mA)
500
0.8
Ta=25OC
0.05mA
Fig. 5 Collector-emitter saturation
voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
500
0.4
500
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.4 DC current gain vs.
collector current (2)
TRANSITION FREQUENCY : fT (MHz)
0.50mA
80
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
DC CURRENT GAIN : hFE
Ta=25OC
0
0.1
0
Fig.3 DC current gain vs.
collector current (1)
Grounded emitter output
characteristics
DC CURRENT GAIN : hFE
50
COLLECTOR CURRENT : IC (mA)
Fig.2
Grounded emitter propagation
characteristics
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Fig.1
10
RATING CHARACTERISTIC CURVES ( CHEMZ8PT )
2SA2018 Typical Electrical Characteristics
Fig.2 DC current gain vs. collector
current
Fig.1 Ground emitter propagation
characteristics
1000
VCE=2V
pulsed
O
O
DC CURRENT GAIN : hFE
100
Ta=25 C
O
O
Ta=-40 C
10
1
O
O
-40 C
100
10
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1
1.4
1000
O
Ta=25 C
pulsed
100
O
Ta=125 C
O
Ta=25 C
10
O
Ta=-40 C
1
1
10
100
COLLECTOR CURRENT : IC (mA)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
Fig.3 Collector-emitter saturation voltage
vs. collector current ( I )
10
100
1000
COLLECTOR CURRENT : IC(mA)
BASE TO EMITTER VOLTAGE : VBE(V)
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
VCE=2V
pulsed
Ta=125 C
25 C
Ta=125 C
COLLECTOR CURRENT : IC(mA)
1000
Fig.4 Collector-emitter saturation voltage
vs. collector current ( II )
1000
IC/IB=20
pulsed
100
O
Ta=125O C
Ta=25 C
O
Ta=-40 C
10
1
1
10
100
COLLECTOR CURRENT : IC (mA)
1000
RATING CHARACTERISTIC CURVES ( CHEMZ8PT )
2SA2018 Typical Electrical Characteristics
1000
EMITTER INPUT CAPACITANCE : Cib (pF)
1000
IC/IB=20
pulsed
Ta=-40OOC
Ta=25 C
O
Ta=125 C
100
10
1
1
10
100
1000
COLLECTOR CURRENT : IC(mA)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Fig.6 Gain bandwidth product vs.
collector current
TRANSITION FREQUENCY : fT(MHZ)
BASER SATURATION VOLTAGE : VBE(sat)(mV)
Fig.5 Base-emitter saturation voltage
vs. collector current
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
1000
IE=0A
f=1MHOZ
Ta=25 C
100
Cib
10
Cob
1
1
10
100
1000
COLLECTOR TO BASE VOLTAGE : VCB(V)
VCE=2V
O
Ta=25 C
pulsed
100
10
1
1
10
100
EMITTER CURRENT : IE(mA)
1000