COMSET 2N3227

NPN 2N3227
SILICON ANNULAR TRANSISTORS
The 2N3227 are silicon NPN silicon annular transistors for low-current, high-speed
switching applications.
They are mounted in Jedec TO-18 metal.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
VCEO
VEBO
VCES
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
IC (peak)
Collector Current
TOTAL Device Dissipation Ambient Temperature
Derating Factore Above
TOTAL Device Dissipation Case Temperature .
Derating Factore Above
Junction Temperature
Storage Temperature range
PD
PD
TJ
TStg
@ TC
25°
@ TC
25°
=
=
Value
Unit
40
20
6
40
V
V
V
V
500
0.36
2.06
1.2
6.85
+200
-65 to +200
mA
Watts
mW/°C
Watts
mW/°C
°C
NPN 2N3227
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
ICBO
Collector cut-off current
ICEX
IBL
Collector cut-off curren
Base cut-off curren
Collector-Base Breakdown
voltage
Emitter-Base Breakdown
voltage
Collector-Emitter Breakdown
voltage (1)
Collector-Emitter voltage
BVCBO
BVEBO
BVCEO
BVCES
Min Typ
Test Condition(s)
IE = 0 ; VCB = 20V
IE = 0 ; VCB = 20V ; TA = 150°C
VCE = 20V ; VEB(off) = 3V
VCE = 20V ; VEB(off) = 3V
Mx Unit
-
-
0.2
50
0.2
0.5
µA
IC =10 µA ; IB = 0
40
-
-
V
IE =10 µA ; IC = 0
6
-
-
V
IC = 10 mA
20
-
-
V
IC =10 µA ; IB = 0
40
-
-
V
COMSET SEMICONDUCTORS
1/2
Symbol
VBE(SAT)
Collector-Emitter saturation
Voltage (1)
Base-Emitter saturation
Voltage (1)
hFE
DC Current Gain
hfe
tS
Small Signal Current Gain
Storage time
Toff
Turn-off time
ton
Turn-on time
Cob
Cib
Output Capacitance
Input Capacitance
VCE(SAT)
Test Condition(s)
Ratings
Min Typ
IC=10 mA, IB=1.0 mA
IC=100 m A, IB=10 mA
IC=10 mA, IB=1.0 mA
IC=100 m A, IB=10 mA
VCE=1.0 V, IC=10 mA
100
VCE=1.0 V, IC=10 mA
TA =-55°c
40
30
VCE=1.0 V, IC=100 mA
5
VCE=10 V, IC=10 mA , f=100MHz
IC = IB1 = IB2 =10 mA
IC=10 A;IB1= 3 mA;IB2 =1.5
mA;VCc=3.0 V
IC=10 A;IB1= 3 mA; VCc=3.0 V ;
VEB(off) = 1.5 V
VCB=5 V ; IE=0 , f=140kHz
VBE=1 V ; IC=0 , f=140kHz
-
NPN 2N3227
MECHANICAL DATA CASE TO-18
Pin 1 :
Pin 2 :
Case :
Emitter
Base
Collector
COMSET SEMICONDUCTORS
2/2
Mx Unit
-
0.25
0.45
0.85
1.4
300
13
-
18
-
12
-
4.0
4.0
V
V
-
ns
pF
pF