NPN 2N3019 – 2N3020 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current PD Total Power Dissipation @ Tamb = 25° PD Total Power Dissipation @ Tcase= 25° TJ Junction Temperature TStg Storage Temperature range 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 Value Unit 80 V 140 V 7 V 1 A 0.8 Watts 5 200 °C -65 to +200 °C THERMAL CHARACTERISTICS Symbol Ratings RthJ-a Thermal Resistance, Junction to ambient in free air RthJ-c Thermal Resistance, Junction to case COMSET SEMICONDUCTORS 2N3019 2N3020 2N3019 2N3020 Value Unit 35 °C/W 219 °C/W 1/3 NPN 2N3019 – 2N3020 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCB =950 V, IE =0 ICBO Collector Cutoff Current VCB =90 V, IE =0, Tj =150°C IEBO VCEO VCBO VEBO Emitter Cutoff Current VEB =5 V, IC =0 Collector Emitter Breakdown IC =10 mA, IB =0 Voltage Collector Base Breakdown IC =100 µA, IE =0 Voltage Emitter Base Breakdown IE =100 µA, IC =0 Voltage IC =0.1 mA, VCE =10 V IC =10 mA, VCE =10 V IC =150 mA, VCE =10 V hFE (1) DC Current Gain IC =500 mA, VCE =10 V IC =1 A, VCE =10 V IC =150 mA, VCE =10 V Tamb = -55°C VCE(SAT) (1) Collector-Emitter saturation Voltage IC =150 mA, IB =15 mA IC =500 mA, IB =50 mA 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3019 2N3020 2N3019 2N3020 Min Typ Mx Unit - - 10 nA - - 10 µA - - 10 nA 80 - - V 140 - - V 7 - - V 50 30 90 40 100 40 50 30 - 100 120 300 120 100 15 - - 40 - - - - 0.2 - - 0.5 - V VBE(SAT) (1) Base-Emitter saturation Voltage IC =150 mA, IB =15 mA 2N3019 - - 1.1 fT Transition frequency IC =50 mA, VCE =10 V f = 20 MHz hfe Small Signal Current Gain 2N3019 2N3020 2N3019 2N3020 100 80 80 30 - 400 200 NF Noise Figure 2N3019 - - 4 dB CCBO Collector-Base capacitance - - 12 pF CEBO Emitter-Base capacitance IC = 0 ,VEB=0.5 V f = 1 MHz - - 60 pF rbb’Cb’c Feedback Time Constant IC =10 mA, VCE =10 V f = 4 MHz - - 400 ps IC =1 mA, VCE =5 V f = 1 kHz IC=-100 µA, VCE =10 V f = 1 kHz, Rg = 1kΩ IE = 0 ,VCB=10 V f = 1 MHz 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 (1) Pulse conditions : tp < 300 µs, δ =2% COMSET SEMICONDUCTORS 2/3 MHz - NPN 2N3019 – 2N3020 MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min A B D E F G H I L Pin 1 : Pin 2 : Case : 12.7 5.08 45° typ max - 0.49 6.6 8.5 9.4 1.2 0.9 - Emitter Base Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3