COMSET BUX80

NPN BUX80
HIGH CURRENT, HIGH SPEED, HIGH POWER
TRANSISTOR
The BUX80 is silicon multiepitaxial planar NPN transistor in Jedec TO-3.
They are intended for use in converters, inverters, switching regulators and motor control systems
applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCER
VEBO
VCES
IC
ICM
IB
Pt
TJ
TStg
Ratings
Collector-Emitter Voltage
Collector- Emitter Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
IB = 0
RBE = 50Ω
IC = 0
VBE = 0
tp = 10ms
@ TC = 40°
Value
Unit
400
500
10
800
10
15
5
100
150
-65 to +150
V
V
V
V
A
A
A
Watts
°C
°C
Value
Unit
1.1
°C/W
THERMAL CHARACTERISTICS
Symbol
RthJC
Ratings
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
IEBO
Collector-Emitter
Sustaining Voltage (1)
Collector-Emitter
Sustaining Voltage (1)
Emitter Cutoff Current
ICES
Collector Cutoff Current
VCEO(SUS)
VCER
Min Typ Mx Unit
IC=100 mA
400
-
-
V
IC=100 mA , RBE = 50Ω
500
-
-
V
-
-
10
1
3
mA
VCE=10 V , IC=0
VCE= VCES , VBE= 0
VCE= VCES , VBE= 0, Tcase = 125°C
COMSET SEMICONDUCTORS
1/2
mA
NPN BUX80
hFE
DC Current Gain (1)
Collector-Emitter
saturation Voltage (1)
Base-Emitter saturation
Voltage (1)
VCE(SAT)
VBE(SAT)
Symbol
IC=1.2 A , VCE=5.0 V
IC=5 A , IB=1 A
IC=8 A , IB=2.5 A
IC=5 A , IB=1 A
IC=8 A , IB=2.5 A
Ratings
Test Condition(s)Sec
-
30
-
1.5
3
1.4
1.8
Turn-on time
IC=5 A , IB=1 A , VCC=250 V
-
-
0.5
ts
Storage time
IC=5 A , VCC=250 V
IB1 =1A , -IB2 =2 A
-
-
3.5
tf
File time
IC=5 A , VCC=-250 V
IB1 =1A , -IB2 =2 A
-
-
0.5
(1) Pulse Duration = 300 µs, Duty Cycle <= 1.5%
MECHANICAL DATA CASE TO-3
DIMENSIONS
Pin 1 :
Pin 2 :
Case :
mm
25,51
38,93
30,12
17,25
10,89
11,62
8,54
1,55
19,47
1
4,06
inches
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,6
0,77
0,04
0,16
Base
Emitter
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
V
Min Typ Mx Unit
ton
A
B
C
D
E
G
H
L
M
N
P
-
3/2
µs