NPN 2N2218A – 2N2219A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2218A and 2N2219A are NPN transistors mounted in TO-39 metal case . They are designed for high-speed switching applications, And feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current PD Total Power Dissipation @ Tamb = 25° PD Total Power Dissipation @ Tcase= 25° TJ Junction Temperature TStg Storage Temperature range 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A Value Unit 40 V 75 V 6 V 800 mA 0.8 Watts 3 Watts 175 °C -65 to +200 °C THERMAL CHARACTERISTICS Symbol Ratings RthJ-a Thermal Resistance, Junction to ambient in free air RthJ-c Thermal Resistance, Junction to case COMSET SEMICONDUCTORS 2N2218A 2N2219A 2N2218A 2N2219A Value Unit 50 °C/W 187.5 °C/W 1/3 NPN 2N2218A – 2N2219A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) ICBO Collector Cutoff Current VCB=60 V, IE=0 ICBO Collector Cutoff Current VCB=60 V, IE=0, Tj=150°C IEBO Emitter Cutoff Current VBE=3.0 V, IC=0 ICEX Collector Cutoff Current VCE=60 V, -VBE=3V VCEO (1) VCBO VEBO Collector Emitter Breakdown IC=10 mA, IB=0 Voltage Collector Base Breakdown IC=10 µA, IE=0 Voltage Emitter Base Breakdown IE=10 µA, IC=0 Voltage IC=0.1 mA, VCE=10 V IC=1 mA, VCE=10 V IC=10 mA, VCE=10 V hFE (1) IC=10 mA, VCE=10 V DC Current Gain Tamb = -55° IC=150 mA, VCE=1 V IC=150 mA, VCE=10 V IC=500 mA, VCE=10 V VCE(SAT) VBE(SAT) Symbol fT hfe Collector-Emitter saturation Voltage (1) Base-Emitter saturation Voltage (1) Ratings IC=150 mA, IB=15 mA IC=500 mA, IB=50 mA IC=150 mA, IB=15 mA IC=500 mA, IB=50 mA Test Condition(s) IC=20 mA, VCE=20 V f= 100MHz Transition frequency Small signal current gain IC=1 mA, VCE=10 V f= 1kHz IC=10 mA, VCE=10 V f= 1kHz COMSET SEMICONDUCTORS Min Typ Mx Unit 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 40 2N2219A 2N2218A 75 2N2219A 2N2218A 6 2N2219A 2N2218A 20 2N2219A 35 2N2218A 25 2N2219A 50 2N2218A 35 2N2219A 75 2N2218A 15 2N2219A 35 2N2218A 20 2N2219A 50 2N2218A 40 2N2219A 100 2N2218A 25 2N2219A 40 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A - 10 nA - 10 µA - 10 nA - 10 nA - - V - - V - - V - 120 300 - - - 0.3 - 1 - 1.2 - 2 V Min Typ Mx Unit 2N2218A 250 2N2219A 300 2N2218A 30 2N2219A 50 2N2218A 50 2N2219A 75 - 150 300 300 375 3/3 MHz - NPN 2N2218A – 2N2219A Symbol Ratings Min Typ Mx Unit Test Condition(s) td Delay time IC=150 mA, IB =15 mA -VBB=0.5 V, VCC=30 V tr Rise time IC=150 mA, IB =15 mA -VBB=0.5 V, VCC=30 V ts Storage time IC=150 mA, IB1 = -IB2 =15 mA VCC=30 V tf Fall time IC=150 mA, IB1 = -IB2 =15 mA VCC=30 V rb,CC Feedback time constant IC=20 mA, VCE=20 V f= 31.8MHz 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A - - 10 ns - - 25 ns - - 225 ns - - 60 ns - - 150 ps (1) Pulse conditions : tp < 300 µs, δ =2% MECHANICAL DATA CASE TO-39 DIMENSIONS A B C D E F G H L Pin 1 : Pin 2 : Case : mm 6,25 13,59 9,24 8,24 0,78 1,05 0,42 45° 4,1 Emitter Base Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3