NPN 2N3583 – 2N3584 – 2N3585 NPN SILICON POWER TRANSISTORS. High voltage power transistors designed for industrial and military applications. TO-66 metal case. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector-Base Voltage (IE= 0) VCEO Collector-Emitter Voltage (IB= 0) VEBO Emitter-Base Voltage (IC= 0) Value 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 IC Collector Current 2N3583 2N3584 2N3585 ICM Peak Collector Current tp = 10ms IB PT TJ TStg Base current Total power Dissipation Junction Temperature Storage Temperature @ Tmb = 70°C Unit 250 330 440 175 250 300 6 1 2 2 V V V A 5 A 1 35 200 -65 to +200 A Watts °C °C THERMAL CHARACTERISTICS Symbol RthJC RthJA Ratings Thermal Resistance, Junction to Case Thermal Resistance, Junction to ambient in free air COMSET SEMICONDUCTORS Value Unit 5 87.5 °C/W 1 NPN 2N3583 – 2N3584 – 2N3585 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEO ICEX Ratings Collector-Emitter cut-off current Collector-Emitter cut-off current IB = 0 ; VCE = 150 V VBE = -1.5V ; VCE = 225 V VBE = -1.5V ; VCE = 340 V VBE = -1.5V ; VCE = 450 V VBE = -1.5V ; VCE = 225 V Tj= 150°C VBE = -1.5V ; VCE = 300 V Tj= 150°C IEBO Emitter cut-offcurrent IC = 0 ; VEB = 6 V VCEO(SUS) Collector-Emitter sustaning Voltage (1) IB = 0 ; IC = 200 mA VCE(SAT) Collector-Emitter saturation Voltage (1) IC = 1 A ; IB = 125 mA VBE(SAT) Base-Emitter saturation Voltage (1) IC = 1 A ; IB = 100 mA VCE = 10 V ; IC = 500 mA hFE DC Current Gain (1) Min Typ Mx Unit Test Condition(s) VCE = 10 V ; IC = 1 A VCE = 2 V ; IC = 1 A IS/B Second Breakdown Collector current VCE = 100 V ; t = 1 s fT Transition frequency VCE = 10 V ; IC = 200 mA f = 5 MHz td+tr Turn-on-time IC = 1 A ; IB = 100 mA tf Fall time IC = 1 A ; IB = 100 mA ts Carrier storage time IC = 1 A ; IB = 100 mA 2N3583 - - 2N3584 - - 2N3585 2N3583 2N3584 2N3585 - - 10 5 5 1 mA 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3583 2N3584 2N3585 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3584 2N3585 2N3584 2N3585 2N3584 2N3585 - - 3 175 250 300 - - 5 0.5 0.5 5 0.75 0.75 - - 1.4 40 10 25 25 8 8 - 200 100 100 80 80 350 - - mA 10 - - MHz - - 3 - - - - 3 V µs 4 1. Measured under pulse conditions :tP <300µs, δ <2%. COMSET SEMICONDUCTORS V 2 NPN 2N3583 – 2N3584 – 2N3585 MECHANICAL DATA CASE TO-66 Pin 1 : Pin 2 : Case : COMSET SEMICONDUCTORS Base Emitter Collector 3