isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor DESCRIPTION ·With TO-3 package ·Respectively complement to type MJ4035 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -16 A IB Base Current -0.5 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -55~200 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.17 ℃/W isc Website：www.iscsemi.cn MJ4030 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor MJ4030 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO Collector-Emitter Breakdown Voltage IC=-100mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-10A; IB=-40mA -2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-16A; IB=-80mA -4 V VBE(sat) Base-Emitter Saturation Voltage IC=-5A; IB=-400mA -3 V VBE(on) Base-Emitter On voltage IC=-10A ; VCE=-3V -3 V ICER Collector Cutoff Current VCB=-60V; RBE= 1KΩ; VCB=-60V; RBE= 1KΩ; TC= 150℃ -1 -5 mA ICEO Collector Cutoff current VCE=-30V; IB=0 -3 mA IEBO Emitter Cut-off current VEB=-5V; IC= 0 -5 mA hFE DC Current Gain IC=-10A ; VCE=-3V isc Website：www.iscsemi.cn CONDITIONS B 2 MIN MAX -60 1000 UNIT V