isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJW16010A DESCRIPTION ·Low Collector Saturation Voltage ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 500V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoids ·Relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-EmitterVoltage 1000 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current 10 A IBM Base Current-Peak 15 A PC Collector Power Dissipation @ TC=25℃ 135 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.92 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJW16010A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 0.7 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A IC= 10A; IB= 2A; TC=100℃ 1.0 1.5 V Base-Emitter Saturation Voltage IC= 10A; IB= 2A IC= 10A; IB= 2A; TC=100℃ 1.5 V ICEV Collector Cutoff Current VCEV=1000V;VBE(off)=1.5V VCEV=1000V;VBE(off)=1.5V;TC=100℃ 0.15 1.0 mA ICER Collector Cutoff Current VCE= 1000V;RBE= 50Ω;TC=100℃ 1.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 0.15 mA hFE DC Current Gain IC= 15A ; VCE= 5V COB Output Capacitance IE= 0;VCB= 10V, ftest= 1.0kHz 400 pF 0.1 μs 0.6 μs Storage Time 3.0 μs Fall Time 0.4 μs VBE(sat) CONDITIONS MIN TYP. MAX 500 V B 5 UNIT 8 Switching times;Resistive load(PW= 30μs; Duty Cycle≤2%) td Delay Time tr Rise Time tstg tf isc Website：www.iscsemi.cn IC= 10A; IB1= 1.3A; IB2= 2.6A; RB2= 1.6Ω; VCC= 250V 2