MJ4032 MJ4035 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIERS 1 ■ 2 DESCRIPTION The MJ4035 is silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for use in general purpose and amplifier applications. The complementary PNP type is the MJ4032. TO-3 INTERNAL SCHEMATIC DIAGRAM R2 Typ. = 55 Ω R1 Typ. = 6 KΩ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value PNP MJ4032 NPN MJ4035 Unit V CBO Collector-Base Voltage (I E = 0) 100 V V CEO Collector-Emitter Voltage (I B = 0) 100 V V EBO Emitter-Base Voltage (I C = 0) IC Collector Current IB 5 V 16 A Base Current 0.5 A P tot Total Dissipation at T c ≤ 25 o C 150 W T stg Storage Temperature Tj Max. Operating Junction Temperature -65 to 200 o C 200 o C For PNP types voltage and current values are negative. June 1997 1/4 MJ4032 / MJ4035 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.17 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER Parameter Test Conditions Typ. Max. Unit 1 5 mA mA Collector Cut-off Current (R BE = 1KΩ) V CE = 100 V V CE = 100 V I CEO Collector Cut-off Current (I B = 0) V CE = 50 V 3 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 5 mA V (BR)CEO ∗ Collector-Emitter Breakdown Voltage V CE(sat) ∗ o T c = 150 C I C = 100 mA 100 Collector-Emitter Saturation Voltage I C = 10 A I C = 16 A I B = 40 mA I B = 80 mA V BE ∗ Base-Emitter Voltage I C = 10 A V CE = 3 V h FE ∗ DC Current Gain I C = 10 A V CE = 3 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP type voltage and current values are negative. 2/4 Min. 1000 V 2.5 4 V V 3 V MJ4032 / MJ4035 TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 A P C O N B V E G U D R P003F 3/4 MJ4032 / MJ4035 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4