Inchange Semiconductor Product Specification MJ4033/4034/4035 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Respectively complement to type MJ4030/4031/4032 ・DARLINGTON ・High DC current gain APPLICATIONS ・For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS MJ4033 VCBO VCEO Collector-base voltage Collector-emitter voltage MJ4034 Open emitter Emitter-base voltage 80 MJ4035 100 MJ4033 60 MJ4034 UNIT 60 Open base MJ4035 VEBO VALUE 80 V V 100 Open collector 5 V IC Collector current 16 A ICM Collector current-peak 20 A IB Base current 0.5 A PC Collector power dissipation 150 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ TC=25℃ Inchange Semiconductor Product Specification MJ4033/4034/4035 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MJ4033 VCEO(SUS) Collector-emitter sustaining voltage MJ4034 MIN TYP. MAX UNIT 60 IC=0.1A ;IB=0 MJ4035 V 80 100 VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=40mA 2.5 V VCEsat-2 Collector-emitter saturation voltage IC=16A; IB=80mA 4.0 V Base-emitter on voltage IC=10A ; VCE=3V 3.0 V 3.0 mA 5.0 mA VBE VCE=30V; IB=0 ICEO Collector cut-off current VCE=40V; IB=0 VCE=50V; IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=10A ; VCE=3V 1000 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 MAX UNIT 1.17 ℃/W Inchange Semiconductor Product Specification MJ4033/4034/4035 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3