LL4154 Small Signal Switching Diodes MINI MELF Features Silicon epitaxial planar diode High speed switching diode 500 mW power dissipation Dimension in millimeters Mechanical Data Case: MINI-MELF,glass case Polarity: Color band denotes cathode Weight: 0.031 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at ２５ ambient temperature unless otherwise specified. MAXIMUM RATINGS Reverse voltage Peak reverse voltage Average forw ard rectified current half w ave rectification w ith resistive load VR=0V Forw ard surge current @ tP=1µ s Pow er dissipation @ TA=２５ Junction temperature Storage temperature range VR VRM IF(AV) IFSM Ptot TJ TSTG LL4154 UNITS 25 35 V V 1501) mA 2.0 5001) 175 -55 --- +175 A mW 1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. ELECTRICAL CHARACTERISTICS Forw ard voltage @ IF=30mA Leakage current @ VR=25V @ VR=25V TJ =150 Capacitance @ V R=0V,f=1MHz,VHF=50mV Reverse breakdown voltage tested with 5μA pulses Reverse recovery time from IF=10mA to IR=10mA to IR=1mA from IF=10mA to IR=1mA, VR=6V. RL=100Ω. Thermal resistance junction to ambient Rectification efficiency @ 100MHz,V RF=2V VF MIN - TYP - MAX 1.0 UNITS V IR IR CJ - - 100 100 4.0 nA μA pF V(BR)R 35 - - V trr - - RθJA ηv 0.45 - 4 2 5001) - ns ns K/W - 1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. LL4154 Small Signal Switching Diodes Ratings AND Charactieristic Curves FIG.1 -- ADMISSIBLE POWER DISSIPATION NNNNNN VERSUS AMBIENT TEMPERATURE FIG.2 -- FORWARD CHARACTERISTICS mA 10 3 mW 1000 900 800 Ptot 10 2 700 600 T J =100 I F 10 500 T J =25 400 1 300 200 10 -1 100 0 0 100 200℃ 10 -2 TA 0 1 VF FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION A 100 V=tp/T IFRM IFRM tp 10 T=1/fp n=0 T 0.1 0.2 1 0.5 0.1 10 -5 10 -4 10 -3 10 -2 10 tp -1 1 10S 2V LL4154 Small Signal Switching Diodes Ratings AND Charactieristic Curves FIG.4 -- RECTIFICATION EFFICIENCY JJJJJJJJMEASUREMENT CIRCUIT FIG.5 -- RELATIVE CAPACITANCE VERSUS JJJJJJJJJJJJJJ VOLTAGE 1.1 T J =25 f=1MHz 1.0 D.U.T. 60 Ctot(V R ) Ctot(OV) VRF=2V 2nF 5K VO 0.9 0.8 0.7 0 2 4 6 8 1 0V VR FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION TEMPERATUREFF FIG.7 -- DYNAMIC FORWARD RESISTANCE FFFVERSUS FORWARD CURRENT nA 10 10 4 4 TJ=25℃ f=1MHz 10 3 10 r 10 2 F 10 10 3 2 10 V R =50V 1 0 10 0 20 0℃ 1 10 -2 10 -1 1 10 IF 10 2 mA