KEXIN KQS4901

IC
IC
SMD Type
400V Dual N-Channel MOSFET
KQS4901
Features
0.45 A, 400 V. RDS(ON) = 4.2
@ VGS = 10 V
Low gate charge (typical 5.8nC)
Low Crss (typical 5.0 Pf)
Fast switching speed
lmproved dv/dt capability
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Symbol
VDSS
Drain Current Continuous (TA=25 )
ID
Drain Current Continuous (TA=70 )
Drain Current Pulsed (Note 1)
IDM
Gate-Source Voltage
VGS
Peak Diode Recovery dv/dt ( Note 2)
dv/dt
Power Dissipation (TA=25 )
PD
Thermal Resistance Junction to Ambient
Unit
400
V
0.45
A
0.285
A
1.8
25
4.5
2
A
V
V/ns
W
1.3
Power Dissipation (TA=70 )
Operating and Storage Temperature
Rating
TJ, TSTG
R
JA
-55 to 150
62.5
/W
www.kexin.com.cn
1
IC
IC
SMD Type
KQS4901
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temperature Coefficient
Testconditons
VGS = 0 V, ID = 250
ID = 250
IDSS
Zero Gate Voltage Drain Current
Min
Typ
Max
400
V
0.42
A, Referenced to 25
Unit
V/
VDS = 400 V, VGS = 0 V
1
VDS = 320 V,Tc = 125
10
A
Gate-Body Leakage, Forward
IGSSF
VGS = 25 V, VDS = 0 V
100
nA
Gate-Body Leakage, Reverse
IGSSR
VGS = -25 V, VDS = 0 V
-100
nA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250
4.0
V
Static Drain-Source On-Resistance
RDS(on)
VGS = 10 V, ID =0.225 A
Forward Transconductance
gFS
A
VDS = 35 V, ID = 0.225A (Note 3)
2.0
3.2
4.2
0.283
m
S
160
210
pF
30
40
pF
5
6.5
pF
td(on)
5
20
ns
tr
20
50
ns
20
50
ns
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
VDS = 25 V, VGS = 0 V,f = 1.0 MHz
VDD = 200V, ID =0.45 A, RG = 25 (Note
3,4)
tf
35
80
ns
Total Gate Charge Vgs=5V
Qg
5.8
7.5
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 320 V, ID = 0.45 A,VGS=10V (Note
3,4)
0.53
nC
3.22
nC
Maximum Continuous Drain-Source Diode
Forward Current
IS
0.45
A
Maximum Pulsed Drain-Source Diode Forward
Current
ISM
1.8
A
Drain-Source Diode Forward Voltage
VSD
1.5
V
VGS = 0 V, IS = 0.45 A
Diode Reverse Recovery Time
trr
VGS = 0 V, IS = 0.45 A (Not 3)
Diode Reverse Recovery Charge
Qrr
diF/dt = 100 A/
Note:
1.Repetitive Rating: Pulse width limited by maximum junction temperature
2 ISD 0.45A,di/dt
200A/
S,VDD BVDSS,starting TJ=25
3 Pulse Test :Pulse width 300 s,Duty cycle 2%
4 Essentially indepentdent of operating temperature
2
A
www.kexin.com.cn
s
86
nS
0.15
nC