Single N-channel MOSFET ELM34400AA-N ■General description ■Features ELM34400AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=10A Rds(on) < 12.5mΩ (Vgs=10V) Rds(on) < 20mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds 30 V Gate-source voltage Vgs ±20 10 V Ta=25°C Continuous drain current Ta=70°C Pulsed drain current Id Idm Tc=25°C Power dissipation Tc=70°C Junction and storage temperature range Pd Tj, Tstg A 8 50 2.5 A 3 W 1.6 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Steady-state Rθja ■Pin configuration Typ. Max. Unit 50 °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. Pin name 1 2 SOURCE SOURCE 3 4 5 SOURCE GATE DRAIN 6 7 DRAIN DRAIN 8 DRAIN 4-1 D G S Single N-channel MOSFET ELM34400AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=20V, Vgs=0V, Ta=55°C 10 Vds=0V, Vgs=±20V Static drain-source on-resistance Rds(on) Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Max. body-diode continuous current 30 Vds=24V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note 1.0 20 1.5 μA ±100 nA 2.5 V A Vgs=10V, Id=10A 9.5 12.5 mΩ Vgs=4.5V, Id=5A 13.0 20.0 mΩ Vds=15V, Id=10A If=1A, Vgs=0V 38 1.1 S V Is 2.3 A Ism 4.6 A Gfs Vsd Ciss 3100 pF Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Coss Vgs=0V, Vds=15V, f=1MHz Crss 600 275 pF pF Gate-source charge Qgs Gate-drain charge Turn-on delay time Qgd Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time Qg 43.0 Vgs=10V, Vds=15V, Id=10A 60.0 1 1 1 1 3 nC 2 9.0 nC 2 7.0 nC 2 td(on) tr Vgs=10V, Vds=15V, Id=1A 15 9 30 20 ns ns 2 2 td(off) RL=25Ω, Rgen=6Ω 70 100 ns 2 20 50 80 80 ns ns 2 tf trr If=2.3A, dIf/dt=100A/μs NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%; 2. Independent of operating temperature; 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 Single N-channel MOSFET ELM34400AA-N ■Typical electrical and thermal characteristics 4-3 Single N-channel MOSFET ELM34400AA-N 4-4