EFA120D Low Distortion GaAs Power FET UPDATED 09/05/2006 FEATURES • • • • • • +28.0dBm TYPICAL OUTPUT POWER 19.5dB TYPICAL POWER GAIN AT 2GHz 0.5 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 30mA PER BIN RANGE Chip Thickness: 75 ± 20 microns All Dimensions In Microns ELECTRICAL CHARACTERISTICS (Ta = 25 OC) Caution! ESD sensitive device. SYMBOLS MIN TYP 26.0 28.0 28.0 19.5 14.5 PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Gain at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=2GHz P1dB G1dB PAE 18.0 MAX UNIT dBm dB 45 % Idss Saturated Drain Current Vds=3V, Vgs=0V 220 340 Gm Transconductance Vds=3V, Vgs=0V 140 180 Vp Pinch-off Voltage Vds=3V,Ids=3.4mA BVgd Drain Breakdown Voltage Igd=1.2mA -13 -15 V BVgs Source Breakdown Voltage Igs=1.2mA -7 -14 V Rth Thermal Resistance (Au-Sn Eutectic Attach) -2.0 40 440 mA mS -3.5 45 V o C/W MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt Note: PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 CONTINUOUS2 12V -5V 5.4 mA 0.9 mA 25 dBm 175oC -65/175oC 3.3 W 8V -4V 1.8 mA 0.3 mA @ 3dB Compression 175oC -65/175oC 3.3 W 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised September 2006 EFA120D Low Distortion GaAs Power FET UPDATED 09/05/2006 S-PARAMETERS 8V, 1/2 Idss Freq GHz 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Note: S11 Mag 0.918 0.878 0.858 0.852 0.849 0.849 0.846 0.848 0.848 0.851 0.859 0.860 0.865 0.870 0.869 0.877 0.878 0.876 0.881 0.882 0.872 0.875 0.876 0.878 0.876 0.878 Ang -74.7 -117.1 -141.0 -156.5 -167.9 -176.5 176.6 170.3 164.8 159.9 154.9 151.1 147.4 144.0 140.7 137.8 134.8 131.7 128.4 124.6 116.8 113.1 110.2 107.5 105.0 103.0 S21 Mag 9.820 6.762 4.898 3.781 3.041 2.558 2.200 1.925 1.720 1.538 1.392 1.261 1.149 1.053 0.962 0.893 0.823 0.766 0.719 0.671 0.662 0.618 0.574 0.524 0.482 0.442 Ang 134.4 108.7 92.3 80.0 69.8 60.8 52.9 45.2 37.9 31.0 23.9 17.5 11.3 5.3 -0.6 -6.1 -11.1 -16.2 -21.4 -26.2 -33.0 -37.8 -41.6 -45.6 -48.6 -51.6 S12 Mag 0.031 0.043 0.046 0.047 0.046 0.047 0.049 0.049 0.049 0.052 0.054 0.056 0.061 0.065 0.068 0.073 0.079 0.085 0.093 0.103 0.116 0.124 0.132 0.141 0.150 0.163 S22 Ang 52.7 33.4 27.4 23.7 21.4 22.4 24.8 23.7 26.5 28.2 30.5 32.3 30.9 33.5 32.0 33.3 32.4 32.2 31.5 30.0 25.9 24.2 22.4 21.3 20.4 17.3 Mag 0.290 0.240 0.223 0.226 0.243 0.261 0.282 0.306 0.331 0.354 0.383 0.416 0.449 0.480 0.511 0.538 0.564 0.586 0.599 0.611 0.605 0.626 0.637 0.662 0.701 0.714 Ang -41.9 -68.5 -84.0 -96.2 -106.1 -111.3 -117.3 -123.0 -128.9 -134.1 -140.2 -145.8 -151.0 -155.5 -159.8 -163.7 -167.5 -171.0 -174.8 -178.6 176.8 172.2 166.9 161.9 156.7 151.8 The data included 0.7 mils diameter Au bonding wires: 1 gate wires, 15 mils each; 2 drain wires, 12 mils each; 4 source wires, 7 mils each. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised September 2006