EXCELICS EFA025A

Excelics
EFA025A
DATA SHEET
Low Distortion GaAs Power FET
•
•
•
•
•
•
•
+21.0dBm TYPICAL OUTPUT POWER
11.0dB TYPICAL POWER GAIN AT 12GHz
TYPICAL 1.5 dB NOISE FIGURE AND 10 dB ASSOCIATED
GAIN AT 12GHz
0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 5mA PER BIN RANGE
'
'
6
*
*
6
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
P1dB
G1dB
PAE
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
MIN
TYP
19
21
MAX
UNIT
dBm
21
9
11
dB
9
%
Power Added efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
38
NF
Noise Figure Vds=3V,Ids=15mA
f=12GHz
1.5
dB
GA
Associated Gain Vds=3V,Ids=15mA
f=12GHz
10
dB
Idss
Saturated Drain Current Vds=3V, Vgs=0V
35
65
Gm
Transconductance
Vds=3V, Vgs=0V
30
40
Vp
Pinch-off Voltage
Vds=3V, Ids=1.0mA
-2
105
mA
mS
-3.5
V
BVgd
Drain Breakdown Voltage Igd=1.0mA
-12
-15
V
BVgs
Source Breakdown Voltage Igs=1.0mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
155
ABSOLUTE1
o
C/W
CONTINUOUS2
Drain-Source Voltage
12V
8V
Vds
Gate-Source Voltage
-8V
-4V
Vgs
Drain Current
Idss
90mA
Ids
Forward Gate Current
6mA
1mA
Igsf
Input Power
19dBm
@ 3dB Compression
Pin
o
Channel Temperature
175 C
150oC
Tch
o
Storage Temperature
-65/175 C
-65/150oC
Tstg
Total Power Dissipation
880mW
730mW
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFA025A
DATA SHEET
Low Distortion GaAs Power FET
P-1dB & PAE vs. Vds
45
55
40
50
45
15
40
10
35
30
5
25
0
Pout (dBm) or PAE (%)
P-1dB (dBm)
20
60
PAE (%)
25
Pout & PAE vs. Pin
f = 12 GHz
Ids =50% Idss
5
6
7
8
9
35
PAE
30
25
20
Pout
15
10
5
0
20
4
f = 12 GHz
Vds = 8 V, Ids = 50% Idss
-15
10
-10
-5
0
Drain-Source Voltage (V)
3V, 15mA
(GHz)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
--- S11 --MAG
0.995
0.976
0.957
0.931
0.906
0.875
0.846
0.818
0.797
0.781
0.762
0.752
0.749
0.747
0.745
0.738
0.729
0.727
0.729
0.718
0.709
0.709
0.706
0.714
0.735
0.738
ANG
-13.5
-26.7
-39.7
-53.0
-63.9
-74.0
-84.0
-93.6
-102.4
-110.6
-119.0
-127.5
-134.0
-138.4
-142.8
-150.1
-157.5
-163.1
-167.9
-173.0
-175.0
178.6
173.1
166.8
162.8
161.3
Note:
--- S21 --MAG
3.600
3.527
3.434
3.313
3.119
2.938
2.796
2.625
2.468
2.330
2.206
2.075
1.940
1.825
1.763
1.728
1.648
1.574
1.532
1.482
1.429
1.365
1.295
1.211
1.147
1.056
ANG
168.7
158.2
148.1
137.7
128.8
120.2
111.9
103.9
96.8
90.0
83.1
76.5
70.6
65.8
61.5
55.4
49.0
43.9
38.6
32.5
28.1
22.5
16.6
11.0
6.6
2.9
10
15
20
S-PARAMETERS
S-PARAMETERS
FREQ
5
Pin (dBm)
8V,Idss
--- S12 --MAG
0.023
0.044
0.064
0.081
0.094
0.106
0.116
0.124
0.129
0.133
0.137
0.139
0.138
0.137
0.140
0.145
0.147
0.147
0.150
0.152
0.153
0.153
0.150
0.145
0.141
0.132
ANG
81.5
72.7
64.8
57.1
50.5
44.0
38.1
32.4
27.4
22.2
17.6
13.3
9.3
6.7
4.3
0.7
-3.4
-6.1
-8.7
-12.3
-14.5
-17.5
-20.2
-23.3
-24.7
-26.2
--- S22 --MAG
0.606
0.595
0.569
0.544
0.536
0.512
0.496
0.484
0.475
0.456
0.448
0.429
0.432
0.444
0.432
0.399
0.400
0.397
0.376
0.386
0.393
0.386
0.403
0.434
0.455
0.490
ANG
-8.1
-15.9
-24.3
-33.3
-41.2
-48.3
-57.0
-64.2
-69.6
-75.0
-81.0
-86.0
-92.2
-93.6
-93.1
-99.1
-107.7
-110.9
-117.7
-129.5
-134.4
-142.4
-150.8
-158.6
-160.4
-165.6
FREQ
(GHz)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
--- S11 --MAG
0.96
0.954
0.923
0.898
0.871
0.848
0.824
0.811
0.785
0.77
0.762
0.756
0.757
0.756
0.761
0.762
0.763
0.766
0.762
0.751
0.73
0.71
0.707
0.71
0.72
0.712
ANG
-14.6
-29.2
-42.9
-55.1
-66.3
-76.4
-85.7
-94.4
-102.5
-109.7
-116.6
-123.4
-129.6
-135.5
-140.7
-146.0
-150.2
-154.6
-158.5
-162.4
-165.4
-167.8
-169.4
-171.7
-175.6
-178.1
The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 4 source wires, 7 mils each.
--- S21 --MAG
4.413
4.255
4.083
3.865
3.651
3.422
3.203
3.021
2.81
2.639
2.49
2.358
2.239
2.136
2.051
1.965
1.891
1.837
1.775
1.7
1.594
1.52
1.457
1.41
1.351
1.29
ANG
167.5
156.5
145.2
135.2
125.5
116.7
108.7
100.7
93.5
87.0
80.6
74.1
68.2
62.2
56.3
50.0
44.2
38.0
31.4
24.6
18.2
12.8
7.9
2.5
-3.6
-7.2
--- S12 --MAG
0.017
0.031
0.044
0.054
0.063
0.069
0.074
0.078
0.08
0.079
0.08
0.079
0.081
0.08
0.079
0.082
0.084
0.087
0.089
0.092
0.093
0.093
0.093
0.097
0.101
0.103
ANG
52.8
58.8
56.1
51.5
46.3
42.2
37.8
32.7
27.9
23.8
20.3
17.6
13.9
11.7
8.7
7.9
5.2
3.9
1.7
-0.7
-3.3
-3.1
-0.8
-0.2
2.4
3.8
--- S22 --MAG
0.699
0.698
0.684
0.665
0.644
0.625
0.608
0.595
0.577
0.564
0.553
0.541
0.531
0.517
0.506
0.496
0.477
0.465
0.462
0.465
0.473
0.489
0.519
0.555
0.578
0.603
ANG
-5.5
-12.1
-18.9
-25.3
-31.6
-37.4
-43.0
-48.7
-54.0
-58.7
-63.4
-67.9
-72.3
-76.9
-82.2
-88.9
-96.8
-106.0
-115.8
-127.1
-138.2
-148.5
-156.4
-163.8
-170.1
-173.3
EFA025A
DATA SHEET
Low Distortion GaAs Power FET
EFA025A
Noise Parameters
Vds=3V, Ids=15mA
Freq.
(GHz)
2
4
6
8
10
12
14
16
18
20
22
24
26
Popt
(MAG)
0.71
0.67
0.81
0.71
0.65
0.70
0.65
0.61
0.70
0.65
0.64
0.69
0.70
(ANG)
17
35
48
63
79
95
105
120
135
145
153
164
175
Nfmin
(dB)
0.53
0.65
0.85
1.05
1.35
1.55
1.90
2.25
2.60
2.90
3.20
3.50
3.80
Rn/50
0.58
0.52
0.49
0.44
0.38
0.34
0.29
0.25
0.17
0.15
0.12
0.08
0.05