ETC EFA080A

Excelics
EFA080A
DATA SHEET
Low Distortion GaAs Power FET
•
•
•
•
•
•
510
+26.0dBm TYPICAL OUTPUT POWER
10.0dB TYPICAL POWER GAIN AT 12GHz
0.3 X 800 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 15mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
116
48
D
D
340
100
40
G
S
G
S
95
50
80
S
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
MIN
TYP
Output Power at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
24.0
26.0
26.0
10.0
7.5
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
130
210
Gm
Transconductance
Vds=3V, Vgs=0V
90
120
Vp
Pinch-off Voltage
Vds=3V, Ids=2.0mA
BVgd
Drain Breakdown Voltage Igd=1.0mA
-12
-15
V
BVgs
Source Breakdown Voltage Igs=1.0mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
P1dB
G1dB
PAE
PARAMETERS/TEST CONDITIONS
50
8.0
MAX
dBm
dB
%
35
-2.0
300
PARAMETERS
ABSOLUTE1
mA
mS
-3.5
55
MAXIMUM RATINGS AT 25OC
SYMBOLS
UNIT
CONTINUOUS2
Drain-Source Voltage
12V
8V
Vds
Gate-Source Voltage
-8V
-4V
Vgs
Drain Current
Idss
260mA
Ids
Forward Gate Current
20mA
4mA
Igsf
Input Power
25dBm
@ 3dB Compression
Pin
o
Channel Temperature
175 C
150oC
Tch
o
Storage Temperature
-65/175 C
-65/150oC
Tstg
Total Power Dissipation
2.5 W
2.1 W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
V
o
C/W
EFA080A
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
FREQ
(GHz)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
--- S11 --MAG ANG
0.983 -38.9
0.949 -71.6
0.916 -96.5
0.894 -115.4
0.879 -130.5
0.873 -140.5
0.871 -148.3
0.869 -154.1
0.872 -158.8
0.872 -162.7
0.873 -166.5
0.876 -169.7
0.879 -173.3
0.880 -177.4
0.882 178.3
0.886 173.2
0.889 168.2
0.892 162.8
0.897 157.9
0.905 153.4
0.923 152.7
0.928 150.2
0.936 147.8
0.939 146.5
0.945 145.2
0.944 144.7
8V, 1/2 Idss
--- S21 --MAG ANG
6.602 158.2
5.927 135.8
4.998 118.0
4.191 104.1
3.536
92.2
3.028
82.8
2.628
74.6
2.311
67.5
2.058
61.1
1.857
55.2
1.689
49.5
1.557
43.9
1.446
38.4
1.356
32.9
1.276
27.2
1.207
20.9
1.141
14.6
1.075
8.3
1.010
1.7
0.949
-4.6
0.829
-9.6
0.769 -14.6
0.713 -19.7
0.664 -23.8
0.624 -27.3
0.592 -30.4
--- S12 --MAG ANG
0.029
65.4
0.050
49.2
0.061
36.4
0.066
27.2
0.068
19.6
0.069
14.5
0.068
10.3
0.067
7.4
0.065
3.8
0.063
3.0
0.061
1.8
0.060
1.0
0.058
-0.9
0.059
-2.3
0.057
-2.9
0.057
-4.6
0.057
-5.7
0.058
-7.1
0.057
-8.0
0.057
-9.8
0.053
-9.0
0.053
-9.5
0.052
-7.8
0.052
-5.4
0.053
-3.9
0.053
0.4
--- S22 --MAG ANG
0.421 -24.5
0.380 -45.7
0.343 -62.4
0.326 -75.6
0.327 -87.3
0.339 -95.6
0.359 -102.4
0.382 -107.5
0.408 -111.9
0.433 -115.1
0.457 -118.4
0.478 -121.4
0.495 -124.4
0.511 -127.6
0.522 -131.2
0.532 -135.3
0.542 -140.3
0.557 -145.3
0.568 -151.5
0.585 -157.6
0.627 -165.3
0.650 -170.5
0.680 -174.4
0.706 -177.2
0.728 -179.7
0.753 179.1
Note: The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 6 source wires, 7 mils each.