EXCELICS EPA720A

Excelics
EPA720A
DATA SHEET
High Efficiency Heterojunction Power FET
•
•
•
•
•
•
+37.5dBm TYPICAL OUTPUT POWER
19.0dB TYPICAL POWER GAIN AT 2GHz
0.4 X 7200 MICRON RECESSED
“MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL
HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
Idss SORTED IN 180mA PER BIN RANGE
'
G1dB
PAE
*
6
*
6
ELECTRICAL CHARACTERISTICS (Ta = 25 C)
P1dB
'
'
O
SYMBOLS
6
*
6
Chip Thickness: 50 ± 10 microns
(with > 20 microns Gold Plated Heat Sink (PHS) )
All Dimensions In Microns
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Gain at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=2GHz
MIN
TYP
36.0
37.5
37.5
19.0
14.0
17.5
MAX
UNIT
dBm
dB
%
52
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
1320
2160
Gm
Transconductance
Vds=3V, Vgs=0V
1440
2280
Vp
Pinch-off Voltage
Vds=3V, Ids=22mA
BVgd
Drain Breakdown Voltage Igd=7.2mA
-11
-15
V
BVgs
Source Breakdown Voltage Igs=7.2mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
-1.0
2820
mS
-2.5
6
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
mA
CONTINUOUS2
Drain-Source Voltage
12V
8V
Vds
Gate-Source Voltage
-8V
-3V
Vgs
Drain Current
Idss
1.6A
Ids
Forward Gate Current
360mA
60mA
Igsf
Input
Power
35dBm
@ 3dB Compression
Pin
o
Channel Temperature
175 C
150oC
Tch
Storage Temperature
-65/175oC
-65/150oC
Tstg
Total Power Dissipation
23 W
19 W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
V
o
C/W
EPA720A
DATA SHEET
High Efficiency Heterojunction Power FET
S-PARAMETERS
FREQ
(GHz)
0.500
1.000
1.500
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
6.500
7.000
7.500
8.000
8.500
9.000
9.500
10.000
Note:
8V, 1/2 Idss
--- S11 ----- S21 --MAG ANG MAG ANG
0.947 -146.8 11.090 102.6
0.944 -164.2 5.705
90.6
0.944 -170.7 3.808
83.9
0.944 -174.4 2.844
78.6
0.945 -176.9 2.259
74.0
0.945 -178.8 1.865
69.7
0.946 179.5 1.582
65.7
0.947 178.1 1.367
61.9
0.948 176.8 1.199
58.3
0.949 175.6 1.064
54.9
0.951 174.5 0.952
51.6
0.952 173.4 0.859
48.5
0.953 172.3 0.780
45.5
0.954 171.3 0.712
42.7
0.955 170.3 0.653
40.1
0.956 169.3 0.601
37.6
0.957 168.3 0.556
35.3
0.958 167.3 0.516
33.2
0.959 166.3 0.481
31.2
0.960 165.4 0.449
29.3
--- S12 --MAG ANG
0.016
22.4
0.017
20.3
0.017
23.5
0.018
28.1
0.019
33.2
0.020
38.3
0.021
43.3
0.022
47.9
0.024
52.1
0.026
55.6
0.028
58.6
0.031
61.1
0.033
63.0
0.036
64.5
0.039
65.5
0.042
66.3
0.045
66.8
0.048
67.0
0.052
67.0
0.055
66.8
--- S22 --MAG ANG
0.501 -168.2
0.520 -172.3
0.531 -173.1
0.542 -173.3
0.555 -173.4
0.570 -173.5
0.586 -173.7
0.603 -174.2
0.621 -174.8
0.639 -175.6
0.657 -176.6
0.674 -177.7
0.691 -178.9
0.708 179.8
0.724 178.4
0.739 176.9
0.753 175.4
0.767 173.9
0.780 172.3
0.792 170.7
The data included 0.7 mils diameter Au bonding wires:
3 gate wires, 20 mils each; 3 drain wires, 12 mils each; 8 source wires, 7 mils each.