Excelics EPA720A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +37.5dBm TYPICAL OUTPUT POWER 19.0dB TYPICAL POWER GAIN AT 2GHz 0.4 X 7200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 180mA PER BIN RANGE ' G1dB PAE * 6 * 6 ELECTRICAL CHARACTERISTICS (Ta = 25 C) P1dB ' ' O SYMBOLS 6 * 6 Chip Thickness: 50 ± 10 microns (with > 20 microns Gold Plated Heat Sink (PHS) ) All Dimensions In Microns PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Gain at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=2GHz MIN TYP 36.0 37.5 37.5 19.0 14.0 17.5 MAX UNIT dBm dB % 52 Idss Saturated Drain Current Vds=3V, Vgs=0V 1320 2160 Gm Transconductance Vds=3V, Vgs=0V 1440 2280 Vp Pinch-off Voltage Vds=3V, Ids=22mA BVgd Drain Breakdown Voltage Igd=7.2mA -11 -15 V BVgs Source Breakdown Voltage Igs=7.2mA -7 -14 V Rth Thermal Resistance (Au-Sn Eutectic Attach) -1.0 2820 mS -2.5 6 MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 mA CONTINUOUS2 Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -3V Vgs Drain Current Idss 1.6A Ids Forward Gate Current 360mA 60mA Igsf Input Power 35dBm @ 3dB Compression Pin o Channel Temperature 175 C 150oC Tch Storage Temperature -65/175oC -65/150oC Tstg Total Power Dissipation 23 W 19 W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com V o C/W EPA720A DATA SHEET High Efficiency Heterojunction Power FET S-PARAMETERS FREQ (GHz) 0.500 1.000 1.500 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 6.500 7.000 7.500 8.000 8.500 9.000 9.500 10.000 Note: 8V, 1/2 Idss --- S11 ----- S21 --MAG ANG MAG ANG 0.947 -146.8 11.090 102.6 0.944 -164.2 5.705 90.6 0.944 -170.7 3.808 83.9 0.944 -174.4 2.844 78.6 0.945 -176.9 2.259 74.0 0.945 -178.8 1.865 69.7 0.946 179.5 1.582 65.7 0.947 178.1 1.367 61.9 0.948 176.8 1.199 58.3 0.949 175.6 1.064 54.9 0.951 174.5 0.952 51.6 0.952 173.4 0.859 48.5 0.953 172.3 0.780 45.5 0.954 171.3 0.712 42.7 0.955 170.3 0.653 40.1 0.956 169.3 0.601 37.6 0.957 168.3 0.556 35.3 0.958 167.3 0.516 33.2 0.959 166.3 0.481 31.2 0.960 165.4 0.449 29.3 --- S12 --MAG ANG 0.016 22.4 0.017 20.3 0.017 23.5 0.018 28.1 0.019 33.2 0.020 38.3 0.021 43.3 0.022 47.9 0.024 52.1 0.026 55.6 0.028 58.6 0.031 61.1 0.033 63.0 0.036 64.5 0.039 65.5 0.042 66.3 0.045 66.8 0.048 67.0 0.052 67.0 0.055 66.8 --- S22 --MAG ANG 0.501 -168.2 0.520 -172.3 0.531 -173.1 0.542 -173.3 0.555 -173.4 0.570 -173.5 0.586 -173.7 0.603 -174.2 0.621 -174.8 0.639 -175.6 0.657 -176.6 0.674 -177.7 0.691 -178.9 0.708 179.8 0.724 178.4 0.739 176.9 0.753 175.4 0.767 173.9 0.780 172.3 0.792 170.7 The data included 0.7 mils diameter Au bonding wires: 3 gate wires, 20 mils each; 3 drain wires, 12 mils each; 8 source wires, 7 mils each.