Excelics EPA240B/EPA240BV DATA SHEET High Efficiency Heterojunction Power FET 960 • • • • • • • +32.5dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN FOR EPA240B AND 9.5dB FOR EPA240BV AT 18GHz 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY EPA240BV WITH VIA HOLE SOURCE GROUNDING Idss SORTED IN 60mA PER BIN RANGE 50 P1dB G1dB PAE D G G 40 120 95 100 G G 50 Chip Thickness: 75 ± 20 microns All Dimensions In Microns PARAMETERS/TEST CONDITIONS : Via Hole No Via Hole For EPA240B EPA240B f=12GHz f=18GHz f=12GHz f=18GHz 48 D 350 ELECTRICAL CHARACTERISTICS (Ta = 25 C) Output Power at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss D D O SYMBOLS 156 MIN TYP 31.0 32.5 32.5 10.5 8.0 9.0 f=12GHz UNIT EPA240BV MAX MIN TYP 31.0 32.5 32.5 12.0 9.5 10.5 44 MAX dBm dB % 45 Idss Saturated Drain Current Vds=3V, Vgs=0V 440 720 Gm Transconductance Vds=3V, Vgs=0V 480 760 Vp Pinch-off Voltage Vds=3V, Ids=6mA BVgd Drain Breakdown Voltage Igd=2.4 mA -11 -15 -11 -15 V BVgs Source Breakdown Voltage Igs=2.4mA -7 -14 -7 -14 V Rth Thermal Resistance (Au-Sn Eutectic Attach) -1.0 940 440 720 480 760 -2.5 -1.0 20 940 mA mS -2.5 V o C/W 15 MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS EPA240B ABSOLUTE1 EPA240BV CONTINUOUS2 ABSOLUTE1 CONTINUOUS2 Vds Drain-Source Voltage 12V 8V 12V 8V Vgs Gate-Source Voltage -8V -3V -8V -3V Ids Drain Current Idss 710mA Idss Idss Igsf Forward Gate Current 120mA 20mA 120mA 20mA Pin Input Power 30dBm @ 3dB Compression 30dBm @ 3dB Compression Tch Channel Temperature 175 oC 150oC 175oC o o 150oC o Tstg Storage Temperature -65/175 C -65/150 C -65/175 C -65/150oC Pt Total Power Dissipation 6.8W 5.7W 9.1W 7.6W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com EPA240B/EPA240BV DATA SHEET High Efficiency Heterojunction Power FET S-PARAMETERS EPA240B 8V, 1/2 Idss FREQ (GHz) 1.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 --- S11 --MAG ANG 0.893 -140.0 0.905 -158.8 0.915 -170.0 0.915 -174.7 0.922 -177.7 0.926 -179.9 0.936 178.1 0.942 176.3 0.940 175.3 0.955 175.0 0.950 174.1 0.931 173.7 0.942 172.1 0.915 169.2 --- S21 --MAG ANG 11.254 105.9 6.029 91.1 3.095 76.0 2.080 64.4 1.559 54.4 1.235 45.7 1.008 36.8 0.832 27.6 0.690 18.2 0.583 9.5 0.487 1.1 0.415 -4.4 0.381 -8.1 0.351 -11.3 --- S12 --MAG ANG 0.024 23.9 0.026 20.1 0.026 24.7 0.027 32.0 0.028 35.9 0.028 44.5 0.030 46.5 0.030 44.1 0.031 41.9 0.033 39.1 0.035 37.8 0.042 42.4 0.057 39.6 0.068 39.9 --- S22 --MAG ANG 0.487 -164.0 0.511 -170.6 0.533 -173.3 0.555 -173.0 0.583 -172.9 0.606 -173.2 0.630 -175.8 0.653 178.4 0.688 170.7 0.734 162.8 0.776 155.7 0.809 152.7 0.847 151.7 0.850 153.6 --- S21 --MAG ANG 12.345 110.8 6.735 93.3 3.380 75.6 2.197 64.0 1.591 54.4 1.235 46.8 0.999 39.2 0.840 31.2 0.732 21.5 0.637 10.2 0.551 -1.7 0.445 -10.8 0.365 -18.8 0.307 -23.0 --- S12 --MAG ANG 0.025 26.9 0.027 16.9 0.026 14.4 0.024 18.4 0.022 21.2 0.019 27.5 0.019 35.1 0.019 33.8 0.019 27.3 0.020 17.1 0.022 11.4 0.022 8.5 0.024 8.3 0.028 17.8 --- S22 --MAG ANG 0.439 -157.5 0.487 -166.8 0.521 -170.5 0.555 -171.8 0.603 -171.4 0.646 -171.4 0.690 -172.5 0.723 -174.9 0.757 -179.0 0.783 175.1 0.808 167.8 0.858 162.0 0.882 157.0 0.905 153.5 S-PARAMETERS EPA240BV 8V, 1/2 Idss FREQ (GHz) 1.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 --- S11 --MAG ANG 0.886 -130.3 0.905 -156.0 0.919 -170.7 0.932 -174.6 0.938 -176.0 0.945 -175.5 0.950 -175.2 0.952 -176.4 0.957 -180.0 0.962 173.9 0.963 166.8 0.965 162.0 0.963 160.4 0.963 161.9 Note: The data included 0.7 mils diameter Au bonding wires; 4 gate wires, 15 mils each; 4 drain wires, 20 mils each; 10 source wires, 7 mils each; no source wires for EPA240BV.