EXCELICS EIA1111-2

EIA1111-2
11.0-11.5 GHz 2-Watt Internally Matched Power FET
UPDATED 02/17/2006
.060 MIN.
FEATURES
•
•
•
•
•
•
.650±.008 .512
∆G
PAE
SN
.004
IDSS
Saturated Drain Current
VP
Pinch-off Voltage
RTH
.070 ±.008
ALL DIMENSIONS IN INCHES
Caution! ESD sensitive device.
MIN
TYP
33.0
34.0
dBm
10.0
11.0
dB
Output Power at 1dB Compression
f = 11.0-11.5GHz
VDS = 8 V, IDSQ ≈ 800mA
Gain at 1dB Compression
f = 11.0-11.5GHz
VDS = 8 V, IDSQ ≈ 800mA
Gain Flatness
f = 11.0-11.5GHz
VDS = 8 V, IDSQ ≈ 800mA
Power Added Efficiency at 1dB Compression
f = 11.0-11.5GHz
VDS = 8 V, IDSQ ≈ 800mA
Drain Current at 1dB Compression
.04
.094
.382
PARAMETERS/TEST CONDITIONS1
Id1dB
DRAIN
.022
YYWW
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
G1dB
.319
GATE
.129
P1dB
.060 MIN.
EIA1111-2
11.0– 11.5GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+34.0 dBm Output Power at 1dB Compression
11.0 dB Power Gain at 1dB Compression
32% Power Added Efficiency
Hermetic Metal Flange Package
SYMBOL
Excelics
MAX
UNITS
±0.6
dB
32
f = 11.0-11.5GHz
%
900
1100
mA
VDS = 3 V, VGS = 0 V
1400
1800
mA
VDS = 3 V, IDS = 14 mA
-1.0
-2.5
3
Thermal Resistance
10
Note: 1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
11
V
o
C/W
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
ABSOLUTE1
CONTINUOUS2
Drain-Source Voltage
12
8V
Gate-Source Voltage
-5
-3V
PARAMETERS
Forward Gate Current
21.6mA
7.2mA
Reserve Gate Current
-3.6mA
-1.2mA
Input Power
32.5dBm
@ 3dB Compression
o
Channel Temperature
175 C
175 oC
Storage Temperature
o
-65 to +175 C
-65 to +175 oC
Total Power Dissipation
13W
13W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
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Revised February 2006