EIC7785-10 7.70-8.50 GHz 10-Watt Internally Matched Power FET UPDATED 04/12/2006 FEATURES • • • • • • • • Excelics 7.70– 8.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 28% Power Added Efficiency -46 dBc IM3 at PO = 29.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 EIC7785-10 .827±.010 .669 .421 .120 MIN .120 MIN YYWW SN .004 .125 .063 .508±.008 .442 .004 .168±.010 .105±.008 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB ∆G PAE Caution! ESD sensitive device. Output Power at 1dB Compression f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 3200mA MIN TYP MAX 39.5 40.5 dBm 7.5 8.5 dB ±0.6 f = 7.70-8.50GHz % Drain Current at 1dB Compression IM3 Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 29.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 8.50GHz IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 5700 7100 VP Pinch-off Voltage VDS = 3 V, IDS = 57 mA -2.5 -4.0 RTH dB 28 Id1dB 3300 -43 3 Thermal Resistance 3700 2) S.C.L. = Single Carrier Level. mA -46 dBc 2.5 Note: 1) Tested with 50 Ohm gate resistor. UNITS mA V o 3.0 C/W 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 15 10V Gate-Source Voltage -5 -4V Forward Gate Current 104.4mA 34.8mA PARAMETERS Reserve Gate Current -17.4mA -5.8mA Input Power 39.5dBm @ 3dB Compression Channel Temperature 175 oC 175 oC Storage Temperature -65 to +175 oC -65 to +175 oC Total Power Dissipation 50W 50W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised April 2006