EIA1114-2 11.0-14.0GHz 2-Watt Internally Matched Power FET UPDATED 07/25/2006 FEATURES • • • • • • • • 11.0– 14.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -36 dBc IM3 at Po = 22.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH P1dB G1dB ∆G PAE .060 MIN. EIA1114-2 GATE .319 DRAIN .022 YYWW SN .045 .094 .382 .004 .129 PARAMETERS/TEST CONDITIONS1 ALL DIMENSIONS IN INCHES MIN TYP 32.5 33.5 dBm 6.0 7.0 dB Output Power at 1dB Compression f = 11.0-14.0GHz VDS = 8 V, IDSQ ≈ 750mA Gain at 1dB Compression f = 11.0-14.0GHz VDS = 8 V, IDSQ ≈ 750mA Gain Flatness f = 11.0-14.0GHz VDS = 8 V, IDSQ ≈ 750mA Power Added Efficiency at 1dB Compression f = 11.0-14.0GHz VDS = 8 V, IDSQ ≈ 750mA MAX dB 25 % Drain Current at 1dB Compression f = 11.0-14.0GHz 850 IM3 Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L2 VDS = 8 V, IDSQ ≈ 65% IDSS f = 14.0GHz -36 IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 1440 1800 VP Pinch-off Voltage VDS = 3 V, IDS = 15 mA -1.0 -2.5 RTH UNITS ±0.8 Id1dB 3 Thermal Resistance 1000 2) S.C.L. = Single Carrier Level. mA dBc 11.0 Note: 1) Tested with 100 Ohm gate resistor. .070 ±.008 Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL Excelics .060 MIN. .650±.008 .512 mA V o 12.0 C/W 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 10 8V Gate-Source Voltage -5 -3V Forward Gate Current 21.6mA 7.2mA Reverse Gate Current -3.6mA -1.2mA Input Power 32.5dBm @ 3dB Compression Channel Temperature o 175 C 175 oC Storage Temperature o -65 to +175 C -65 to +175 oC Total Power Dissipation 12W 12W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised July 2006