EIC1414-12 14.0-14.5 GHz 12-Watt Internally Matched Power FET ISSUED 6/30/2006 FEATURES • • • • • • 14.0– 14.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 5.0 dB Power Gain at 1dB Compression 20% Power Added Efficiency Hermetic Metal Flange Package Excelics .024 EIC1414-12 .827±.010 .669 .421 .120 M IN .120 M IN .004 .125 .063 .508±.008 .442 .004 .168±.010 .105±.008 ALL DIM ENSIO NS IN IN CHES Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB ∆G PAE MIN TYP 39.5 40.5 dBm 4.0 5.0 dB Output Power at 1dB Compression f = 14.0-14.5GHz VDS = 10 V, IDSQ ≈ 3500mA Gain at 1dB Compression f = 14.0-14.5GHz VDS = 10 V, IDSQ ≈ 3500mA Gain Flatness f = 14.0-14.5GHz VDS = 10 V, IDSQ ≈ 3500mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 3500mA f = 14.0-14.5GHz Id1dB Drain Current at 1dB Compression IDSS Saturated Drain Current VP Pinch-off Voltage RTH Thermal Resistance3 Note: 1) Tested with 50 Ohm gate resistor. MAX UNITS ±0.6 dB 20 f = 14.0-14.5GHz % 3600 4200 mA VDS = 3 V, VGS = 0 V 6000 7500 mA VDS = 3 V, IDS = 60 mA -2.5 -4.0 V 2.3 2.6 2) S.C.L. = Single Carrier Level. o C/W 3) Overall Rth depends on case mounting. 1,2 ABSOLUTE MAXIMUM RATING SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 15 10V Gate-Source Voltage -5 -4V Forward Gate Current 136mA 45mA PARAMETERS Reverse Gate Current -23mA -8mA Input Power 39.5dBm @ 3dB Compression Channel Temperature o 175 C 175 oC Storage Temperature o -65 to +175 C -65 to +175 oC Total Power Dissipation 58W 58W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised June 2006