EID1416-12 14.0-16.0 GHz 12-Watt Internally Matched Power FET UPDATED 12/06/2006 Excelics FEATURES • • • • • • .827±.010 .669 14.0– 16.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.0 dBm Output Power at 1dB Compression 5.0 dB Power Gain at 1dB Compression 22% Power Added Efficiency Hermetic Metal Flange Package .024 EID1416-12 .421 .120 MIN .120 MIN YYWW SN .004 .125 .063 .508±.008 .442 .004 .168±.010 .105±.008 ALL DIMENSIONS IN INCHES Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB ∆G PAE Output Power at 1dB Compression f = 14.0-16.0GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 14.0-16.0GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 14.0-16.0GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression f = 14.0-16.0GHz VDS = 10 V, IDSQ ≈ 3200mA Id1dB Drain Current at 1dB Compression IDSS Saturated Drain Current VP Pinch-off Voltage RTH MIN TYP MAX UNITS 40.0 41.0 dBm 4.0 5.0 dB ±1.0 dB 22 f = 14.0-16.0GHz % 4000 5000 mA VDS = 3 V, VGS = 0 V 6000 7500 mA VDS = 3 V, IDS = 60 mA -1.0 -2.5 2 Thermal Resistance 2.5 3.0 V o C/W Note: 1. Tested with 50 Ohm gate resistor. 2. Overall Rth depends on case mounting. MAXIMUM RATING1,2 (Ta = 25°C) SYMBOLS VDS VGS Igsf Igsr Pin Tch Tstg Pt ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 15V 10V Gate-Source Voltage -5V -3V Forward Gate Current 135mA 45mA Reverse Gate Current -21mA -7mA Input Power 40.0dBm @ 3dB Compression Channel Temperature o 175 C 175 oC Storage Temperature o -65 to +175 C -65 to +175 oC Total Power Dissipation 50W 50W PARAMETERS Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 1 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised December 2006