EIC7179-12 7.10-7.90 GHz 12-Watt Internally Matched Power FET ISSUED 02/29/2008 2X 0.079 MIN 4X 0.102 FEATURES • • • • • • • • Excelics EIC7179-12 7.10– 7.90GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.5 dBm Output Power at 1dB Compression 9.0 dB Power Gain at 1dB Compression 38% Power Added Efficiency -47 dBc IM3 at PO = 28.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH 0.945 0.580 YYWW SN 0.315 P1dB G1dB ∆G PAE 0.055 0.685 0.010 0.168 0.617 0.004 0.158 0.095 0.055 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Caution! ESD sensitive device. PARAMETERS/TEST CONDITIONS1 SYMBOL 0.024 0.803 Output Power at 1dB Compression f = 7.10-7.90GHz VDS = 10 V, IDSQ ≈ 3250mA Gain at 1dB Compression f = 7.10-7.90GHz VDS = 10 V, IDSQ ≈ 3250mA Gain Flatness f = 7.10-7.90GHz VDS = 10 V, IDSQ ≈ 3250mA Power Added Efficiency at 1dB Compression f = 7.10-7.90GHz VDS = 10 V, IDSQ ≈ 3200mA MIN TYP MAX 40.5 41.5 dBm 8.0 9.0 dB ±0.6 f = 7.10-7.90GHz % Drain Current at 1dB Compression IM3 Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 7.90GHz IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 6500 7900 VP Pinch-off Voltage VDS = 3 V, IDS = 62 mA -2.5 -4.0 RTH dB 38 Id1dB 3500 -45 3 Thermal Resistance 4150 2) S.C.L. = Single Carrier Level. mA -47 dBc 2.3 Note: 1) Tested with 50 Ohm gate resistor. UNITS 2.8 mA V o C/W 3) Overall Rth depends on case mounting. MAXIMUM RATING AT 25°C1,2 SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 15 10V Gate-Source Voltage -5 -4V Forward Gate Current 129.6mA 43.2mA Reverse Gate Current -21.6mA -7.2mA Input Power 37dBm @ 3dB Compression Channel Temperature 175 oC 175 oC Storage Temperature -65 to +175 oC -65 to +175 oC Total Power Dissipation 54W 54W PARAMETERS Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised February 2008 EIC7179-12 ISSUED 02/29/2008 7.10-7.90 GHz 12-Watt Internally Matched Power FET S-PARAMETERS Measured at Vds=10V, IDS=3250mA Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised February 2008