EIA7785-6 7.70-8.50 GHz 6-Watt Internally Matched Power FET UPDATED 11/30/2005 Excelics FEATURES • • • • • • .024 EIA7785-6 7.70– 8.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +38.5 dBm Output Power at 1dB Compression 10 dB Power Gain at 1dB Compression 36% Power Added Efficiency Hermetic Metal Flange Package .827±.010 .669 .421 .120 MIN .120 MIN YYWW SN .004 .125 .063 .508±.008 .442 .004 .168±.010 .105±.008 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB ∆G PAE MIN TYP 37.5 38.5 dBm 9 10 dB Output Power at 1dB Compression f = 7.70-8.50GHz VDS = 8 V, IDSQ ≈ 2000mA Gain at 1dB Compression f = 7.70-8.50GHz VDS = 8 V, IDSQ ≈ 2000mA Gain Flatness f = 7.70-8.50GHz VDS = 8 V, IDSQ ≈ 2000mA Power Added Efficiency at 1dB Compression f = 7.70-8.50GHz VDS = 8 V, IDSQ ≈ 2000mA Id1dB Drain Current at 1dB Compression IDSS Saturated Drain Current VP Pinch-off Voltage RTH Caution! ESD sensitive device. UNITS ±0.6 dB 36 f = 7.70-8.50GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 39mA 3 Thermal Resistance 2) S.C.L. = Single Carrier Level. % 2200 2500 mA 3900 4800 mA -1.0 -2.5 4.0 Note: 1) Tested with 100 Ohm gate resistor. MAX 4.5 V o C/W 3) Overall Rth depends on case mounting. 1,2 ABSOLUTE MAXIMUM RATING SYMBOLS Vds Vgs Ids Igsf Igsr Pin Tch Tstg Pt ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 12 8V Gate-Source Voltage -5 -3V PARAMETERS Drain Current IDSS 4.1A Forward Gate Current 61.2mA 20.4mA Reserve Gate Current -10.2mA -3.4mA Input Power 37.5dBm @ 3dB Compression Channel Temperature o 175 C 175 oC Storage Temperature o -65 to +175 C -65 to +175 oC Total Power Dissipation 33W 33W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 1 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2005