Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 6, 3/2011 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be u s e d i n C l a s s A B a n d C l a s s C f o r P C N -- P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 50 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 31% Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 170 Watts CW Output Power • Pout @ 1 dB Compression Point ≃ 170 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. 2110--2170 MHz, 50 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs CASE 465B--03, STYLE 1 NI--880 MRF7S21170HR3 CASE 465C--02, STYLE 1 NI--880S MRF7S21170HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 170 W CW Case Temperature 73°C, 25 W CW RθJC 0.31 0.36 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2006--2008, 2011. All rights reserved. RF Device Data Freescale Semiconductor MRF7S21170HR3 MRF7S21170HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1A (Minimum) Machine Model (per EIA/JESD22--A115) B (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 500 nAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 372 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1400 mAdc) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test) VGG(Q) 4.5 5.4 6.5 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3.72 Adc) VDS(on) 0.1 0.15 0.3 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.9 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 703 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (2) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., f = 2167.5 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 15 16 18 dB Drain Efficiency ηD 29 31 — % PAR 5.7 6.1 — dB ACPR — --37 --35 dBc IRL — --15 --9 dB Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued) MRF7S21170HR3 MRF7S21170HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 2110--2170 MHz Bandwidth Video Bandwidth @ 170 W PEP Pout where IM3 = --30 dBc (Tone Spacing from 100 kHz to VBW) ∆IMD3 = IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both sidebands) VBW MHz — 25 — Gain Flatness in 60 MHz Bandwidth @ Pout = 50 W Avg. GF — 0.4 — dB Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 170 W CW Φ — 1.95 — ° Delay — 1.7 — ns Part--to--Part Insertion Phase Variation @ Pout = 170 W CW f = 2140 MHz, Six Sigma Window ∆Φ — 18 — ° Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.015 — dB/°C ∆P1dB — 0.01 — dB/°C Average Group Delay @ Pout = 170 W CW, f = 2140 MHz Output Power Variation over Temperature (--30°C to +85°C) MRF7S21170HR3 MRF7S21170HSR3 RF Device Data Freescale Semiconductor 3 Z17 R1 VBIAS VSUPPLY R2 + C1 Z7 C2 C8 R3 RF INPUT Z1 C10 C12 C13 Z9 C4 Z2 Z3 Z4 Z5 Z6 C3 C5 Z10 Z8 Z11 Z12 DUT C6 Z13 Z14 C14 C15 Z15 C17 RF Z16 OUTPUT C18 C16 Z18 C7 Z1 Z2* Z3* Z4* Z5* Z6 Z7 Z8 Z9 Z10 0.250″ x 0.083″ Microstrip 0.090″ x 0.083″ Microstrip 0.842″ x 0.083″ Microstrip 0.379″ x 0.083″ Microstrip 0.307″ x 0.083″ Microstrip 0.156″ x 0.787″ Microstrip 1.160″ x 0.080″ Microstrip 0.119″ x 0.787″ Microstrip 0.077″ x 0.880″ Microstrip 0.459″ x 1.000″ Microstrip Z11 Z12* Z13* Z14* Z15* Z16 Z17, Z18 PCB C9 C11 0.060″ x 0.760″ Microstrip 0.129″ x 0.083″ Microstrip 0.436″ x 0.083″ Microstrip 0.490″ x 0.083″ Microstrip 0.275″ x 0.083″ Microstrip 0.230″ x 0.083″ Microstrip 0.900″ x 0.080″ Microstrip Taconic TLX8--0300, 0.030″, εr =2.55 * Variable for tuning Figure 1. MRF7S21170HR3(HSR3) Test Circuit Schematic Table 5. MRF7S21170HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 100 pF Chip Capacitor ATC100B101JT500XT ATC C2, C3, C7, C8, C17, C18 6.8 pF Chip Capacitors ATC100B6R8BT500XT ATC C4, C15 0.3 pF Chip Capacitors ATC100B0R3BT500XT ATC C5 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC C6 0.2 pF Chip Capacitor ATC100B0R2BT500XT ATC C9, C10, C11, C12 10 μF Chip Capacitors C5750X5R1H106MT TDK C13 470 μF, 63 V Electrolytic Capacitor, Radial 477KXM063M Illinois Capacitor C14 0.4 pF Chip Capacitor ATC100B0R4BT500XT ATC C16 0.1 pF Chip Capacitor ATC100B0R1BT500XT ATC R1, R2 10 kΩ, 1/4 W Chip Resistors CRCW12061002FKEA Vishay R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay MRF7S21170HR3 MRF7S21170HSR3 4 RF Device Data Freescale Semiconductor C13 R2 R1 C1 C8 C2 C10 C12 R3 C17 C3 C5 C6 CUT OUT AREA C4 C14 C15 C9 C16 C18 C11 C7 MRF7S21170H Rev 0 Figure 2. MRF7S21170HR3(HSR3) Test Circuit Component Layout MRF7S21170HR3 MRF7S21170HSR3 RF Device Data Freescale Semiconductor 5 Gps Gps, POWER GAIN (dB) 16 34 15 14 13 12 32 ηD 30 VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1400 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) IRL 11 10 28 --5 0 --10 --1 PARC 9 2060 --2 2100 2080 2120 2140 2160 2180 2200 --15 --20 --3 2220 --25 IRL, INPUT RETURN LOSS (dB) 36 PARC (dB) 17 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) Gps, POWER GAIN (dB) 16 15 14 42 Gps 40 ηD 13 12 38 VDD = 28 Vdc, Pout = 84 W (Avg.), IDQ = 1400 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) IRL 11 10 36 --5 --2 --10 --3 --4 PARC 9 2060 2100 2080 2120 2140 2160 2180 2200 --15 --20 --5 2220 --25 IRL, INPUT RETURN LOSS (dB) 44 PARC (dB) 17 ηD, DRAIN EFFICIENCY (%) Figure 3. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 50 Watts Avg. f, FREQUENCY (MHz) Figure 4. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 84 Watts Avg. 18 --10 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 2100 mA Gps, POWER GAIN (dB) 17 1750 mA 16 1400 mA 15 1050 mA 700 mA 14 13 1 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurements, 10 MHz Tone Spacing 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two--Tone Power Gain versus Output Power 400 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurements, 10 MHz Tone Spacing --20 2100 mA --30 IDQ = 700 mA --40 1400 mA --50 --60 1750 mA 1050 mA 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Third Order Intermodulation Distortion versus Output Power MRF7S21170HR3 MRF7S21170HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, IDQ = 1400 mA f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurements, 10 MHz Tone Spacing --20 --30 --40 3rd Order --50 5th Order 7th Order --60 1 10 100 400 0 VDD = 28 Vdc, Pout = 170 W (PEP), IDQ = 1400 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz --10 --20 IM3--L --30 IM3--U --40 IM5--U --50 --60 IM7--U IM5--L IM7--L 10 1 100 Pout, OUTPUT POWER (WATTS) PEP TWO--TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing OUTPUT COMPRESSION AT THE 0.01% PROBABILITY ON THE CCDF (dB) 1 54 Ideal 0 48 --1 42 --1 dB = 43.335 W --2 36 --2 dB = 61.884 W --3 30 --3 dB = 83.111 W --4 --5 Actual 24 VDD = 28 Vdc, IDQ = 1400 mA f = 2140 MHz, Input Signal PAR = 7.5 dB 20 40 80 60 100 ηD, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) --10 18 120 Pout, OUTPUT POWER (WATTS) 19 VDD = 28 Vdc, IDQ = 1400 mA, f = 2140 MHz Single--Carrier W--CDMA, Input Signal PAR = 7.5 dB, ACPR @ ±5 MHz Offset in 3.84 MHz Integrated Bandwidth --30 Uncorrected, Upper and Lower --40 DPD Corrected No Memory Correction --50 --60 Gps 18 25_C TC = --30_C 40 85_C 16 30 20 15 VDD = 28 Vdc IDQ = 1400 mA f = 2140 MHz ηD DPD Corrected, with Memory Correction 13 41 42 43 44 45 46 47 48 49 50 Pout, OUTPUT POWER (dBm) Figure 10. Digital Predistortion Correction versus ACPR and Output Power 50 85_C 25_C 17 14 --70 40 60 --30_C 1 10 100 10 ηD, DRAIN EFFICIENCY (%) --20 Gps, POWER GAIN (dB) ACPR, UPPER AND LOWER RESULTS (dBc) Figure 9. Output Peak--to--Average Ratio Compression (PARC) versus Output Power 0 400 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power MRF7S21170HR3 MRF7S21170HSR3 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 17 Gps, POWER GAIN (dB) IDQ = 1400 mA f = 2140 MHz 16 15 14 VDD = 24 V 28 V 13 0 100 32 V 280 200 Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain versus Output Power W--CDMA TEST SIGNAL 100 10 0 --10 Input Signal --30 0.1 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --20 1 (dB) PROBABILITY (%) 10 0 1 2 3 4 5 6 --40 --50 --60 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 7 8 9 PEAK--TO--AVERAGE (dB) Figure 13. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 10 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 14. Single--Carrier W--CDMA Spectrum MRF7S21170HR3 MRF7S21170HSR3 8 RF Device Data Freescale Semiconductor Zo = 10 Ω f = 2220 MHz Zload Zsource f = 2060 MHz f = 2220 MHz f = 2060 MHz VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg. f MHz Zsource Ω Zload Ω 2060 4.57 -- j10.70 1.02 -- j3.54 2080 4.57 -- j10.38 0.99 -- j3.34 2100 4.57 -- j10.06 0.96 -- j3.14 2120 4.52 -- j9.72 0.93 -- j2.94 2140 4.40 -- j9.42 0.92 -- j2.76 2160 4.15 -- j9.12 0.91 -- j2.59 2180 4.44 -- j8.82 0.89 -- j2.42 2200 4.19 -- j8.53 0.88 -- j2.25 2220 4.12 -- j8.23 0.88 -- j2.09 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF7S21170HR3 MRF7S21170HSR3 RF Device Data Freescale Semiconductor 9 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 61 P6dB = 53.89 dBm (244 W) 61 59 58 P3dB = 53.56 dBm (226 W) 57 56 P1dB = 52.75 dBm (188 W) 55 54 Actual 53 VDD = 28 Vdc, IDQ = 1400 m, Pulsed CW 12 μsec(on), 10% Duty Cycle, f = 2140 MHz 52 51 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) 60 62 Ideal 32 33 34 35 36 37 38 39 40 41 42 43 60 59 58 P3dB = 54.65 dBm (290 W) 57 56 P1dB = 53.54 dBm (226 W) 55 Actual 54 VDD = 32 Vdc, IDQ = 1400 mA, Pulsed CW 12 μsec(on), 10% Duty Cycle, f = 2140 MHz 53 44 52 33 34 35 Pin, INPUT POWER (dBm) 36 37 38 39 40 41 42 43 44 45 Pin, INPUT POWER (dBm) NOTE: Measured in a Peak Tuned Load Pull Fixture NOTE: Measured in a Peak Tuned Load Pull Fixture Test Impedances per Compression Level P3dB Ideal P6dB = 54.88 dBm (307 W) Zsource Ω Zload Ω 4.43 -- j11.85 0.81 -- j2.87 Figure 16. Pulsed CW Output Power versus Input Power @ 28 V Test Impedances per Compression Level P3dB Zsource Ω Zload Ω 4.43 -- j11.85 0.72 -- j2.87 Figure 17. Pulsed CW Output Power versus Input Power @ 32 V MRF7S21170HR3 MRF7S21170HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF7S21170HR3 MRF7S21170HSR3 RF Device Data Freescale Semiconductor 11 MRF7S21170HR3 MRF7S21170HSR3 12 RF Device Data Freescale Semiconductor MRF7S21170HR3 MRF7S21170HSR3 RF Device Data Freescale Semiconductor 13 MRF7S21170HR3 MRF7S21170HSR3 14 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 May 2006 • Initial Release of Data Sheet 1 June 2006 • Added Class C to description of parts, pg. 1 • Changeded “≥” to “--” in the Device Output Signal Par bullet, pg. 1 • Changed typ value from ±9 to 18 in Part--to--Part Phase Variation characteristic description in Table 4, Typical Performances, p. 2 • Expanded the characterization range in the MTTF Factor graph from 200_C to 230_C, Fig. 12, p. 7 2 Aug. 2006 • Added Greater Negative Source bullet to Features section, p. 1 • Corrected Fig. 14, Single--Carrier W--CDMA Spectrum, to 3.84 MHz, p. 7 3 Sept. 2006 • Changed “Capable of Handling” bullet from 10:1 VSWR @ 28 Vdc to 5:1 VSWR @ 32 Vdc, pg. 1 • Added “Insertion” to Part--to--Part Phase Variation characteristic description in Table 4, Typical Performances, p. 2 • Added Gain Flatness, Group Delay and Deviation from Linear Phase characteristics to Table 4, Typical Performances, p. 2 • Corrected Z6 value from “0.119” to “0.156”, corrected Z8 value from “0.156” to “0.119”, corrected Z9 value from “0.770” to “0.077”, corrected Z11 value from “0.076” to “0.760”, Fig. 1, Test Circuit Schematic, p. 3 • Added Part Number and Manufacturer for R1, R2 and R3 in Table 5, Test Circuit Component Designations and Values, p. 3 • Added Figure 10, Digital Predistortion Correction, p. 6 • Corrected Fig. 15, Single--Carrier W--CDMA Spectrum, to correctly reflect integrated bandwidth offsets, p. 7 • Added Figure 17, Pulsed CW Output Power versus Input Power @ 28 Vdc, p. 9 • Added Figure 18, Pulsed CW Output Power versus Input Power @ 32 Vdc, p. 9 4 May 2007 • Removed “Designed for Digital Predistortion Error Correction Systems” bullet as functionality is standard, p. 1 • Added “Optimized for Doherty Applications” bullet to Features section, p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Removed footnote and “Measured in Functional Test” from the RF test condition voltage callout for VGS(Q), and added Fixture Gate Quiescent Voltage, VGG(Q) to On Characteristics table, p. 2 • Updated verbiage in Typical Performances table, p. 3 • Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers and updated obsoleted ATC600 series capacitors to ATC100 series, p. 4 • Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic range, p. 7 • Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 8 • Fig. 14, CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single--Carrier Test Signal, updated to include output power level at functional test, p. 8 (continued) MRF7S21170HR3 MRF7S21170HSR3 RF Device Data Freescale Semiconductor 15 REVISION HISTORY (continued) Revision Date 5 Apr. 2008 Description • Corrected On Characteristics table ID value for VGS(th) from 270 μAdc to 372 μAdc and VDS(on) from 2.7 Adc to 3.72 Adc; tightened VGS(th) minimum and maximum values to match production test values, p. 2 • Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 4 • Updated Fig. 14, CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single--Carrier Test Signal, to better represent production test signal, p. 8 6 Mar. 2011 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13628, p. 1, 2 • Fig. 13, MTTF versus Junction Temperature removed, p. 8. Refer to the device’s MTTF Calculator available at freescale.com/RFpower. Go to Design Resources > Software and Tools. • Fig. 14, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 15, Single--Carrier W--CDMA Spectrum updated to show the undistorted input test signal, p. 8 (renumbered as Figs. 13 and 14 respectively after Fig. 13 removed) • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 15 MRF7S21170HR3 MRF7S21170HSR3 16 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006--2008, 2011. All rights reserved. MRF7S21170HR3 MRF7S21170HSR3 Document Number: RF Device Data MRF7S21170H Rev. 6, 3/2011Semiconductor Freescale 17