http://www.fujielectric.com/products/semiconductor/ 6MBI50VA-060-50 IGBT Modules IGBT MODULE (V series) 600V / 50A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC =25°C unless otherwise specified) Items Symbols Inverter Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Junction temperature Conditions VCES VGES IC IC pulse -IC -IC pulse PC Tj Continuous 1ms 1ms 1 device TC =80°C TC =80°C Maximum ratings 600 ±20 50 100 50 100 200 175 Operating junciton temperature (under switching conditions) Tjop 150 Case temperature Storage temperature TC Tstg 125 -40 ~ +125 Isolation voltage Between terminal and copper base (*1) Viso Between thermistor and others (*2) AC : 1min. Screw torque Mounting (*3) M5 - V V A W °C 2500 VAC 3.5 Nm Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) 1 Units 6MBI50VA-060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical characteristics (at Tj = 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols Conditions ICES IGES VGE (th) VGE = 0V, VCE = 600V VCE = 0V, VGE = ±20V VCE = 20V, IC = 50mA VCE (sat) (terminal) VGE = 15V IC = 50A VCE (sat) (chip) VGE = 15V IC = 50A RG (int) Cies ton tr tr (i) toff tf VCE = 10V, VGE = 0V, f = 1MHz Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Inverter Collector-Emitter saturation voltage Internal gate resistance Input capacitance Turn-on time Turn-off time VCC = 300V IC = 50A VGE = +15 / -15V RG = 43Ω VF (terminal) Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C IF = 50A Forward on voltage VF (chip) IF = 50A Reverse recovery time trr Resistance R B value B IF = 50A T = 25°C T = 100°C T = 25 / 50°C Items Symbols Conditions Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*4) Rth(c-f) Thermistor Characteristics min. typ. max. 1.0 200 6.2 6.7 7.2 1.90 2.35 2.20 2.40 1.60 2.05 1.90 2.10 0 3.3 0.36 1.20 0.25 0.60 0.07 0.52 1.20 0.03 0.45 1.90 2.35 1.80 1.75 1.60 2.05 1.50 1.45 0.35 5000 465 495 520 3305 3375 3450 Units mA nA V V Ω nF µs V µs Ω K Thermal resistance characteristics Characteristics min. typ. max. 0.71 1.15 0.05 - Inverter IGBT Inverter FWD with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. Equivalent Circuit Schematic [ Inverter ] [ Thermistor ] 15,16 25,26 9 10 5 6 1 2 U 23,24 3 4 V 21,22 W 19,20 11 12 7 8 27,28 13,14 2 17 18 Units °C/W 6MBI50VA-060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Tj= 150°C / chip VGE =20V 100 12V 15V Collector current : IC [A] Collector current : IC [A] 100 75 10V 50 25 VGE=20V 15V 12V 75 10V 50 25 8V 8V 0 0 0 1 2 3 4 5 0 3 4 5 Collector-Emitter voltage: VCE [V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C Tj= 25°C / chip 8 Collector - Emitter voltage : VCE [V] 150°C 125°C 75 50 25 0 6 4 2 IC=100A IC=50A IC=25A 0 0 1 2 3 4 5 5 10 15 20 Collector-Emitter voltage: VCE [V] Gate - Emitter voltage: VGE [V] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) [ Inverter ] Dynamic gate charge (typ.) VCC=300V, IC=50A,Tj= 25°C VGE=0V, f= 1MHz, Tj= 25°C Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 100.0 Capacitance: Cies, Coes, Cres [nF] 2 Collector-Emitter voltage: VCE [V] 100 Collector current : IC [A] 1 10.0 Cies 1.0 Coes Cres 0.1 0 10 20 30 40 VCE VGE 0 -400 Collector - Emitter voltage: VCE [V] 0 Gate charge: QG [nC] 3 25 400 6MBI50VA-060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [ Inverter ] Switching time vs. Collector current (typ.) VCC=300V, VGE=±15V, RG=43Ω, Tj= 125°C [ Inverter ] Switching time vs. Collector current (typ.) VCC=300V, VGE=±15V, RG=43Ω, Tj= 150°C 10000 1000 toff Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 ton tr 100 tf 10 1000 100 tf 10 0 50 100 150 Collector current: IC [A] 0 [ Inverter ] Switching time vs. gate resistance (typ.) VCC=300V, IC=50A, VGE=±15V, Tj= 125°C Switching loss : Eon, Eoff, Err [mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] toff ton tr 1000 tf 100 10 10.0 100.0 50 100 150 Collector current: IC [A] [ Inverter ] Switching loss vs. Collector current (typ.) VCC=300V, VGE=±15V, RG=43Ω 10000 4 Eon(150°C) Eon(125°C) 3 Eoff(150°C) Eoff(125°C) 2 1 Err(150°C) Err(125°C) 0 1000.0 0 25 50 75 100 Gate resistance : RG [Ω] Collector current: IC [A] [ Inverter ] Switching loss vs. gate resistance (typ.) VCC=300V, IC=50A, VGE=±15V [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 43Ω ,Tj <= 150°C 15 150 Collector current: IC [A] Eon(150°C) Eon(125°C) Switching loss : Eon, Eoff, E [mJ/pulse ] ton tr toff 10 Eoff(150°C) Eoff(125°C) 5 Err(150°C) Err(125°C) 0 10 100 100 RBSOA (Repetitive pulse) 50 0 0 1000 100 200 300 400 500 600 700 Collector-Emitter voltage : VCE [V] (Main terminals) Gate resistance : RG [Ω] 4 800 6MBI50VA-060-50 [ Inverter ] Forward current vs. forward on voltage (typ.) chip 1000 Tj=25°C 75 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [A] 100 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Tj=150°C 50 Tj=125°C 25 0 0 1 2 3 4 Irr(150°C) Irr(125°C) 100 trr(150°C) trr(125°C) 10 5 0 50 100 Forward on voltage : VF [V] Forward current : IF [A] Transient thermal resistance (max.) [ Thermistor ] Temperature characteristic (typ.) 100 10.00 150 FWD[Inverter] 1.00 Resistance : R [kΩ] Thermal resistanse : Rth(j-c) [ °C/W ] [ Inverter ] Reverse recovery characteristics (typ.) VCC=300V, VGE=±15V, RG=43Ω IGBT[Inverter] 0.10 τ Rth [°C/W] 0.01 0.001 [sec] IGBT FWD 0.0023 0.0301 0.0598 0.0708 0.07616 0.19308 0.27277 0.16800 0.12335 0.31274 0.44181 0.27211 0.010 0.100 10 1 0.1 1.000 -60 Pulse width : Pw [sec] -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [°C ] Outline Drawings, mm 5 6MBI50VA-060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 6