NTE NTE2989

NTE2989
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D High Speed Switching
D Low On–Resistance
D No Secondary Breakdown
D Low Driving Power
D High Voltage
D Repetitive Avalanche Rated
Applications:
D Switching Regulators
D UPS
D DC–DC Converters
D General Purpose Power Amplifier
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Avalanche Current, Repetitive or Non–Repetitive (Tch ≤ +150°C), IAR . . . . . . . . . . . . . . . . . . . . . 10A
Avalanche Energy, EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64.7mJ
Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Symbol
Test Conditions
Min
Typ
Max
Unit
600
–
–
V
3.5
4.0
4.5
V
Tch = +25°C
–
10
500
µA
Tch = +125°C
–
0.2
1.0
mA
V(BR)DSS ID = 1mA, VGS = 0V
VGS(th)
IDSS
ID = 1mA, VDS = VGS
VDS = 600V,
VGS = 0V
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Gate–Source Leakage Current
Drain–Source On–State Resistance
Symbol
Test Conditions
Min
Typ
Max
Unit
IGSS
VGS = ±30V, VDS = 0V
–
10
100
nA
RDS(on)
ID = 4.5A, VGS = 10V
–
0.85
1.0
Ω
Forward Transconductance
gfs
ID = 5A, VDS = 25V
3
6
–
S
Input Capacitance
Ciss
VDS = 25V, VGS = 0V, f = 1MHz
–
1100
1700
pF
Output Capacitance
Coss
–
170
260
pF
Reverse Transfer Capacitance
Crss
–
74
120
pF
Turn–On Time, ton
(ton = td(on) + tr)
td(on)
–
25
40
ns
–
70
110
ns
Turn–Off Time, toff
(toff = td(off) + tf)
td(off)
–
75
120
ns
tf
–
40
60
ns
VCC = 300V, ID = 10A, VGS = 10V,
RGS = 10Ω
Ω
tr
Avalanche Capability
IAV
L = 100µH, Tch = +25°C
10
–
–
A
Diode Forward On–Voltage
VSD
IF = 2 x IDR, VGS = 0V, Tch = +25°C
–
1.0
1.5
V
IF = IDR, VGS = 0V,
–dIF/dt = 100A/µs,
µ Tch = +25°C
°
–
500
–
ns
–
6.5
–
µC
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
.114 (2.9)
.181 (4.6) .126 (3.2) Dia Max
Max
.405 (10.3)
Max
Isol
.252
(6.4)
.622
(15.0)
Max
G
D
S
.118
(3.0)
Max
.531
(13.5)
Min
.098 (2.5)
.100 (2.54)