http://www.fujielectric.com/products/semiconductor/ 1MBI75U4F-120L-50 IGBT Modules IGBT MODULE (U series) 1200V / 75A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter DB for Motor Drive AC and DC Servo Drive Amplifier (DB) Active PFC Industrial machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Collector current Symbols VCES VGES Conditions Ic Continuous Icp 1ms -Ic -Ic pulse Collector power dissipation Pc Reverse voltage for FWD VR IF Forword current for FWD IF pulse Junction temperature Tj Storage temperature Tstg Isolation voltage Between terminal and copper base (*1) Viso Mounting (*2) Screw torque Terminals (*3) 1ms 1 device Continuous 1ms AC : 1min. Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable Value : 2.5 to 3.5 Nm (M5 or M6) Note *3: Recommendable Value : 2.5 to 3.5 Nm (M5) 1 Tc=25°C Tc=80°C Tc=25°C Tc=80°C Maximum ratings 1200 ±20 100 75 200 150 35 70 400 1200 100 200 +150 -40~+125 2500 Units V V 3.5 Nm A W V A °C °C VAC 1MBI75U4F-120L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage ICES IGES VGE (th) VCE (sat) (terminal) VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 75mA Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse Current Forward on voltage Reverse recovery time Lead resistance, terminal-chip(*4) VCE (sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) IR VF (terminal) VF (chip) trr R lead Tj=25°C Tj=125°C Tj=25°C Tj=125°C = 0V, VCE = 10V, f = 1MHz VGE = 15V IC = 75A VGE VCC = 600V, IC = 75A VGE = ±15V, RG = 9.1Ω VGE = 0V IF = 35A Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE = 1200V VGE = 0V IF = 100A Tj=25°C Tj=125°C Tj=25°C Tj=125°C IF = 100A Characteristics min. typ. max. 1.0 200 4.5 6.5 8.5 2.05 2.20 2.25 1.90 2.05 2.10 8 0.32 1.20 0.10 0.60 0.03 0.41 1.00 0.07 0.30 1.65 2.00 1.75 1.60 1.85 1.70 1.0 1.75 1.90 1.90 1.60 1.75 1.75 0.35 1.39 - Units mA nA V V nF µs V mA V µs mΩ Note *4: Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Symbols Thermal resistance (1device) Rth(j-c) Contact thermal resistance Rth(c-f) Conditions IGBT Inverse Diode FWD with Thermal Compound (*5) Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound. 2 Characteristics min. typ. max. 0.31 0.88 0.40 0.05 - Units °C/W 1MBI75U4F-120L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj=25oC / chip Collector current vs. Collector-Emitter voltage (typ.) Tj=125oC / chip 200 VGE=20V 15V 150 12V 100 Collector current : Ic [A ] Collector current : Ic [ A ] 200 10V 50 VGE=20V 150 15V 12V 100 10V 50 8V 8V 0 0 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 5 0 VGE=15V / chip Switching loss : Eon, Eoff, Err [ mJ/pulse ] Collector current : Ic [ A ] 200 Tj=25oC Tj=125oC 100 50 0 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 10 8 6 4 Ic=150A Ic=75A Ic=37.5A 2 0 5 5 10 15 20 Gate-Emitter voltage : VGE [ V ] 100.0 10.0 Cies 1.0 Cres Collector- Emitter voltage : VCE[ 200V/div ] Gate-Emitter voltage : VGE [ 5V/div ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] VGE=0V, f=1MHz, Tj=25oC Coes 0.1 VGE VCE 0 10 20 Collector-Emitter voltage : VCE [ V ] 25 Dynamic Gate charge (typ.) Vcc=600V, Ic=75A, Tj=25oC Capacitance vs. Collector-Emitter voltage (typ.) 0 5 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25oC / chip Collector current vs. Collector-Emitter voltage (typ.) 150 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 30 3 0 100 200 300 Gate charge : Qg [ nC ] 400 1MBI75U4F-120L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=9.1Ω,Tj=25oC Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=9.1Ω,Tj=125oC 10000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 toff ton tr 100 tf 10 0 50 100 Collector current : Ic [ A ] 1000 ton toff tr 100 tf 10 150 0 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 10000 ton toff tr 100 tf 10 1 10 100 Gate resistance : RG [ Ω ] 14 Eon(25oC) Eoff(125oC) 10 Err(125oC) 8 Eoff(25oC) 6 Err(25oC) 4 2 0 1000 0 25 50 75 100 Collector current : Ic [ A ] 125 150 Reverse bias safe operating area (max.) +VGE=15V, -VGE <= 15V, RG >= 9.1Ω, Tj <= 125oC 40 200 30 150 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon(125oC) 12 Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=75A, VGE=±15V, Tj=125oC Eon 20 Eoff 10 150 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=9.1Ω Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=75A, VGE=±15V, Tj=25oC 1000 50 100 Collector current : Ic [ A ] 100 50 Err 0 0 1 10 100 Gate resistance : RG [ Ω ] 1000 0 4 400 800 1200 Collector-Emitter voltage : VCE [ V ] 1600 1MBI75U4F-120L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ FWD FWD Forward current vs. Forward on voltage (typ.) chip 1000 Tj=25oC 200 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 250 Forward current : IF [ A ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, RG=9.1Ω Tj=125oC 150 100 50 0 0 1 2 3 Forward on voltage : VF [ V ] trr(125oC) Irr(25oC) 10 4 0 Inverse Diode Forward current vs. Forward on voltage (typ.) chip 50 100 Forward current : IF [ A ] 150 Transient thermal resistance (max.) 10.00 80 Tj=125oC Thermal resistance : Rth(j-c) [ oC/W ] Tj=25oC Forward current : IF [ A ] Irr(125oC) trr(25oC) 100 60 40 20 0 0 1 2 3 Forward on voltage : VF [ V ] 1.00 FWD IGBT 0.10 0.01 0.001 4 5 Inberse Diode 0.010 0.100 Pulse width : Pw [ sec ] 1.000 1MBI75U4F-120L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Outline Drawings, mm 94 80 E2 23 C1 E1 G1 23 34 G2 E2 4 C2E1 17 6.5 4 2-Ø 2.7max. 6 8 22.3 30 0.5 3-M5 Equivalent Circuit Schematic 6 1MBI75U4F-120L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 7