http://www.fujielectric.com/products/semiconductor/ FGW75N60HD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Equivalent circuit Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC =25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage DC Collector Current Symbols VCES VGES IC@25 100 A 75 225 225 60 35 225 A A A A A A 5 μs 500 190 -40~+175 -55~+175 °C °C Diode Pulsed Current IC@100 ICP IF@25 IF@100 I FP Short Circuit Withstand Time tSC IGBT Max. Power Dissipation FWD Max. Power Dissipation Operating Junction Temperature Storage Temperature PD_IGBT PD_FWD Tj Tstg Pulsed Collector Current Turn-Off Safe Operating Area Diode Forward Current Characteristics Units 600 V ±20 V W Remarks Collector TC =25°C, Tj =150°C Note *1 TC =100°C, Tj =150°C Note *2 VCE ≤600V, Tj ≤175°C Note *1 Gate Note *1 VCC ≤300V, VGE=12V Tj ≤175°C TC =25°C TC =25°C Emitter Note *1 : Current value limited by bonding wire. Note *2 : Pulse width limited by Tjmax. Electrical characteristics (at Tj = 25°C unless otherwise specified) Items Symbols Conditions Collector-Emitter Breakdown Voltage V(BR)CES IC = 250μA, VGE = 0V Zero Gate Voltage Collector Current ICES VCE = 600V, VGE = 0V Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage IGES VGE (th) VCE = 0V, VGE = ±20V VCE = +20V, IC = 75mA Collector-Emitter Saturation Voltage VCE (sat) VGE = +15V, IC = 75A Input Capacitance Output Capacitance Reverse Transfer Capacitance Cies Coes Cres Gate Charge QG Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy td(on) tr td(off) tf Eon Turn-Off Energy Eoff Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy td(on) tr td(off) tf Eon Turn-Off Energy Eoff VCE=25V VGE=0V f=1MHz VCC = 400V IC = 75A VGE = 15V Tj = 25°C VCC = 400V IC = 75A VGE = 15V RG = 10Ω L = 500μH Energy loss include “tail” and FWD reverse recovery. Tj = 175°C VCC = 400V IC = 75A VGE = 15V RG = 10Ω L = 500μH Energy loss include “tail” and FWD reverse recovery. 1 Tj =25°C Tj =175°C Tj =25°C Tj =175°C Characteristics min. typ. max. 600 250 10 200 4.0 5.0 6.0 1.50 1.95 1.80 6150 300 240 - 460 - - 45 130 450 105 3.0 - - 4.2 - - 45 130 490 120 4.3 - - 4.8 - Units V µA mA nA V V pF nC ns mJ ns mJ FGW75N60HD Discrete IGBT http://www.fujielectric.com/products/semiconductor/ FWD Characteristics Description Symbol Forward Voltage Drop VF Diode Reverse Recovery Time trr1 Diode Reverse Recovery Time trr2 Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Time trr2 Diode Reverse Recovery Charge Qrr Conditions IF=35A VCC =30V,IF = 3.5A -di/dt=200A/μs VCC =400V IF=35A -diF /dt=200A/µs Tj =25°C VCC =400V IF=35A -diF/dt=200A/µs Tj =175°C Thermal resistance characteristics Items Symbols Conditions Thermal Resistance, Junction-Ambient Thermal Resistance, IGBT Junction to Case Thermal Resistance, FWD Junction to Case Rth(j-a) Rth(j-c)_IGBT Rth(j-c)_FWD - 2 Tj =25°C Tj =175°C Characteristics min. typ. max. 2.0 2.6 1.4 - Unit V V 26 36 ns 0.05 - μs - 0.12 - μC - 0.19 - μs - 1.10 - μC Characteristics min. typ. max. 50 0.298 0.781 Units °C/W FGW75N60HD Discrete IGBT http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Graph.1 DC Collector Current vs T V ≥+15V, T ≤175ºC Graph.2 Collector Current vs. switching frequency V =+15V, T ≤175ºC, V =400V, D=0.5, R =10Ω, T =100ºC C GE j GE C G CC C 140 100 120 Switching frequency fs [kHz] Collector current IC [A] 100 Tj≤175℃ 80 60 40 80 60 40 20 20 0 0 25 50 75 100 125 150 0 175 20 Graph.3 Typical Output Characteristics (V -I ) T =25ºC CE p 60 80 100 120 Graph.4 Typical Output Characteristics (V -I ) T =175ºC C CE j 150 40 Collector-Emitter corrent : ICE [A] Case Temperature [°C] C j j 150 VGE=20V VGE=20V 12V 15V 125 125 10V 8V 12V 15V 100 100 75 75 IC [A] IC [A] 10V 50 50 25 25 0 8V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 VCE [V] 2.0 2.5 3.0 3.5 4.0 VCE [V] Graph.6 Gate Threshold Voltage vs. T I =75mA, V =20V Graph.5 Typical Transfer Characteristics V =+15V j GE C CE 8 120 7 Gate Threshold Voltage VGE(th) [V] 100 IC [A] 80 60 Tj=175℃ Tj=25℃ 40 20 max. 6 5 typ. 4 min. 3 2 1 0 0 0 2 4 6 8 -50 10 -25 0 25 50 75 Tj [℃] VGE [V] 3 100 125 150 175 FGW75N60HD Discrete IGBT http://www.fujielectric.com/products/semiconductor/ Graph.8 Typical Gate Charge V =400V, I =75A, T =25ºC Graph.7 Typical Capacitance V =0V, f=1MHz, T =25ºC GE CC j C j 20 4 10 Cies 15 VCC=400V VGE [V] C [pF] 3 10 Coes 10 Cres 2 10 5 1 10 0 -2 -1 10 0 10 1 10 10 B 0 100 200 Graph.9 Typical switching time vs. I T =175ºC, V =400V, L=500µH V =15V,R =10Ω g tf td(on) tr 10 1 C td(off) tr tf 100 td(on) 10 1 0 20 40 60 80 100 120 140 0 Collector Current IC [A] GE , G , g 30 40 50 60 G j CC 12 20 Graph.12 Typical switching losses vs. R T =175ºC, V =400V, I =75A, L=500µH V =15V C j 10 Gate Resistor RG [Ω] Graph.11 Typical switching losses vs. I T =175ºC, V =400V, L=500µH V =15V, R =10Ω CC C GE , j j 12 10 10 Switching Energy Losses [mJ] Switching Energy Losses [mJ] CC 1000 td(off) 100 600 GE j Switching Times [nsec] Switching Times [nsec] 1000 G 500 G j CC GE 400 Graph.10 Typical switching time vs. R T =175ºC, V =400V, I =75A, L=500µH V =15V C j 300 QG [nC] VCE [V] 8 Eoff Eon 6 4 2 Eoff 8 Eon 6 4 2 0 0 0 20 40 60 80 100 120 0 140 10 20 30 40 Gate Resistor RG [Ω] Collector Current IC [A] 4 50 60 FGW75N60HD Discrete IGBT http://www.fujielectric.com/products/semiconductor/ Graph.14 Typical reverse recovery characteristics vs. I T =175ºC, V =400V, L=500µH V =15V, R =10Ω Graph.13 FWD Forward voltage drop (V -I ) F F F j CC GE 70 G 250 2.5 200 2.0 Tj=175℃ Reverse recovery Time [nsec] Tj=25℃ 50 IF [A] 40 30 20 150 1.5 trr 100 1.0 Qrr 0.5 50 10 0 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 10 20 30 VF [V] 60 70 Graph.16 Reverse biased Safe Operating Area T ≤175ºC, V =+15V/0V, R =10Ω F j CC GE 50 IF [A] Graph.15 Typical reverse recovery loss vs. I T =175ºC, V =400V, L=500µH V =15V, R =10Ω j 40 GE G G 350 400 300 Collector current IC [A] Reverse recovery loss [uJ] 300 250 200 150 100 200 100 50 0 0 0 10 20 30 40 50 60 70 0 200 400 600 Collector-Emitter voltage : VCE [V] IF [A] 5 800 Reverse Recovery Charge [uC] 60 FGW75N60HD Discrete IGBT http://www.fujielectric.com/products/semiconductor/ Graph.17 Transient thermal resistance of IGBT 101 Zth(j-c) [℃/W] 100 10-1 10-2 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 10-1 100 t [sec] Graph.18 Transient thermal resistance of FWD 101 Zth(j-c) [℃/W] 100 10-1 10-2 10-3 10-6 10-5 10-4 10-3 10-2 t [sec] 6 FGW75N60HD Discrete IGBT http://www.fujielectric.com/products/semiconductor/ Outline Drawings, mm Outview : TO-247 Package ① ② ③ CONNECTION ① GATE ② COLLECTOR ③ EMITTER ① ② DIMENSIONS ARE IN MILLIMETERS. ③ 7 FGW75N60HD Discrete IGBT http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved. 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