This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. SPECIFICATION Device Name : Power MOSFET . Type Name : 2SK3217-01MR . Spec. No. : Date : . 7-Jan.-1999 . Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 Fuji Electric Co.,Ltd. www.fujisemiconductor.com Matsumoto Factory DATE CHECKED APPROVED Fuji Electric Co.,Ltd. 7-Jan.-'99 DWG.NO. DRAWN NAME MS5F4478 1 •^ 13 a b H04-004-05 1.Scope This specifies Fuji Power MOSFET 2SK3217-01MR 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.Outview TO-220F ℃ (unless otherwise specified) 5.Absolute Maximum Ratings at Tc=25℃ Symbol Characteristics Unit Drain-Source Voltage VDS 100 V Continuous Drain Current ID ±50 A Pulsed Drain Current IDP ±200 A Gate-Source Voltage VGS ±30 V Maximum Avalanche Energy EAV 464 mJ PD 70 W PD 2.0 W Operating and Storage Tch 150 ℃ Temperature range Tstg -55 to +150 Maximum Power Dissipation Remarks *1 Ta=25℃ ℃ *1 L=298μH,Vcc=24V ℃ (unless otherwise specified) 6.Electrical Characteristics at Tc=25℃ Static Ratings Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Symbol BVDSS VGS(th) IDSS IGSS RDS(on) Conditions min. typ. max. Unit ID=1mA VGS=0V 100 V ID=1mA VDS=VGS 2.5 VDS=100V Tch=25℃ VGS=0V Tch=125℃ 3.0 3.5 V 1 100 μA 0.1 0.5 mA 10 100 nA 20 25 mΩ VGS=±30V VDS=0V ID=25A VGS=10V Fuji Electric Co.,Ltd. DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Description MS5F4478 a b 2 •^ 13 H04-004-06 Dynamic Ratings Description Symbol Forward Transconductance gfs Conditions ID=25.0A min. typ. 16.0 32.0 max. S VDS=25V Input Capacitance Ciss VDS=25V 3200 4800 Output Capacitance Coss VGS=0V 760 1140 230 345 Reverse Transfer Crss Unit f=1MHz pF Capacitance Turn-On Time Vcc=48V 23 35 tr VGS=10V 130 195 td(off) ID=50A 110 165 tf RGS=10Ω 65 100 typ. max. ns Reverse Diode Description Symbol Avalanche Capability Diode Forward On-Voltage Reverse Recovery IAV VSD trr min. L=100μH Tch=25℃ 50 Unit A See Fig.1 and Fig.2 IF=50A VGS=0V 0.97 1.46 V Tch=25℃ IF=50A 150 ns 0.80 μC VGS=0V Time Reverse Recovery Conditions Qrr -di/dt=100A/μs Tch=25℃ Charge 7.Thermal Resistance Description Symbol min. typ. max. Unit Channel to Case Rth(ch-c) 1.79 ℃/W Channel to Ambient Rth(ch-a) 62.5 ℃/W Fuji Electric Co.,Ltd. DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Turn-Off Time td(on) MS5F4478 a b 3 •^ 13 H04-004-03 10V Fuji Electric Co.,Ltd. DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Fig.1 Test circuit L D.U.T 50Ω Vcc=24V L=100uH Starting Tch=25℃ 1 shot pulse 0 MS5F4478 Vcc Fig.2 Operating waveforms VGS 0 IAV BVDSS VDS ID a b 4 •^ 13 H04-004-03 DWG.NO. Fuji Electric Co.,Ltd. MS5F4478 a b 5 •^ 13 H04-004-03 This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. 0 10 10 10 10 10 3 10 -1 25 50 10 0 Fuji Electric Co.,Ltd. DWG.NO. ID [A] This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. PD [W] 80 Power Dissipation PD=f(Tc) 70 60 50 40 30 20 10 0 75 Tc [℃ ] 2 D.C. 1 10 VDS [V] 1 100 125 10 2 150 Safe operating area ID=f(VDS):Single Pulse(D=0),Tc=25℃ t= 1μs 10μs 100μs 1ms 10ms 0 t 100ms t D= T T -1 10 MS5F4478 3 a b 6 •^ 13 H04-004-03 ID [A] VGS=20V 0 0.1 0 1 2 Fuji Electric Co.,Ltd. DWG.NO. ID [A] This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Typical output characteristics ID=f(VDS):80μs pulse test,Tc=25℃ 125 15V 10V 100 7.0V 6.5V 75 6.0V 50 5.5V 25 5.0V 4.5V 0 2 3 4 6 4 8 5 VDS [V] Typical transfer characteristics ID=f(VGS):80μs pulse test,VDS=25V,Tch=25℃ 100 10 1 10 VGS [V] MS5F4478 a b 7 •^ 13 H04-004-03 Typical forward transconductance gfs=f(ID):80μs pulse test,VDS=25V,Tch=25℃ 2 10 1 10 0 This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. gfs [s] 10 10 -1 10 -1 10 0 10 1 10 2 ID [A] Typical Drain-Source on-State Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25℃ 0.08 VGS= 4.5V 5.0V 5.5V 6.0V 0.07 RDS(on) [Ω] 0.06 0.05 6.5V 0.04 7.0V 0.03 10V 15V 20V 0.02 0.01 0.00 0 20 40 60 80 100 120 Fuji Electric Co.,Ltd. DWG.NO. ID [A] MS5F4478 a b 8 •^ 13 H04-004-03 -50 -50 -25 -25 0 25 0 Fuji Electric Co.,Ltd. 25 DWG.NO. VGS(th) [V] This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. RDS(on)[mΩ] Drain-source on-state resistance RDS(on)=f(Tch):ID=25A,VGS=10V 80 70 60 50 40 max. 30 typ. 20 10 0 50 75 2.0 50 75 100 125 100 125 150 Tch [℃] Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA 5.0 4.5 4.0 3.5 3.0 max. 2.5 typ. min. 1.5 1.0 0.5 0.0 150 Tch [℃] MS5F4478 a b 9 •^ 13 H04-004-03 100p 10 1n 10 20 40 -1 10 60 50 60 Fuji Electric Co.,Ltd. 80 0 10 100 120 1 80 VDS 140 10 100 VGS Vcc=80V 50V 20V 15 40 20 0 MS5F4478 VGS [V] 0 -2 DWG.NO. VDS [V] This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. C [F] Typical capacitances C=f(VDS):VGS=0V,f=1MHz 100n 10n Ciss Coss Crss 2 VDS [V] Typical Gate Charge Characteristics VGS=f(Qg):ID=50A,Tch=25℃ 25 90 20 70 10 30 5 10 0 Qg [nC] 160 a b 10 •^ 13 H04-004-03 Typical Forward Characteristics of Reverse Diode -ID=f(VSD):80μs pulse test,Tch=25℃ 100 90 80 70 -ID [A] 60 50 40 30 20 This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. 10V 5V VGS=0V 10 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10Ω 10 3 t [ns] 10 4 td(off) 10 2 tf tr td(on) 10 1 10 -1 10 0 10 1 10 2 Fuji Electric Co.,Ltd. DWG.NO. ID [A] MS5F4478 a b 11 •^ 13 H04-004-03 Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch),Non Repetitive 70 60 I(AV) [A] 50 40 30 20 This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. 10 0 0 25 50 75 100 125 150 Starting Tch [℃] Maximum Avalanche energy vs. starting Tch Eas=f(starting Tch):Vcc=24V,I AV ≦ 50A,Non-Repetitive 600 500 Eas [mJ] 400 300 200 100 0 0 25 50 75 100 125 150 Fuji Electric Co.,Ltd. DWG.NO. Starting Tch [℃] MS5F4478 a b 12 •^ 13 H04-004-03 Zth(ch-c) [℃/W] 10 1 10 0 10 10 10 -1 10 -6 10 -5 10 -4 Fuji Electric Co.,Ltd. 10 DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Transient Thermal Impedance Zth(ch-c)=f(t):D=t/T D=0.5 0.2 0.1 0.05 0.02 0.01 -2 0 t t D= T T -3 -3 10 -2 10 -1 MS5F4478 10 0 t [sec] a b 13 •^ 13 H04-004-03