PHOTODIODE Si photodiode array S7978 5 × 5 element array for X-ray detector Features Applications l High reliability photodiode with ceramic scintillator High X-ray sensitivity: 1.8 times higher than CWO scintillator Less afterglow: <0.1 %/3 ms, <0.01 %/30 ms No deliquescence l 5 × 5 element photodiode array l Number of channels can be increased by connecting several S7978 together. l X-ray analysis, X-ray detection ■ Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 5 -10 to +60 -20 to +70 Unit V °C °C ■ Electrical and optical characteristics (Ta=25 °C, per 1 element, without scintillator) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Terminal capacitance Symbol λ λp S ID Ct Condition With resin λ=500 nm, with resin VR=10 mV VR=5 V, f=10 kHz Min. - Typ. 220 to 1000 720 0.36 0.1 30 Max. 10 50 Unit nm µm A/W pA pF ■ X-ray sensitivity (reference value, per 1 element, tube current: 1.0 mA, aluminum filter: t=6 mm, distance=830 mm) X-ray tube voltage 120 kV Typ. 2.1 Unit nA Note) Depends on equipment and measurement conditions. 1 Si photodiode array S7978 ■ Dimensional outline (unit: mm) 19.78 ± 0.15 CHIP 11.39 e2 d2 c2 b2 a2 e3 d3 c3 b3 a3 e4 d4 c4 b4 a4 e5 d5 c5 b5 a5 1314 1314 P 1.778 × 4 = 7.112 1.0 15.24 ± 0.1 1.27 1.95 ± 0.2 ACTIVE AREA 1.28 × 1.28 2.1 ± 0.4 SCINTILLATOR 9.19 CNN. B CNN. A PRECI-DIP 852-10-014-10-001 3.0 ± 0.2 +0 P 1.27 × 6 = 7.62 e1 d1 c1 b1 a1 8.89-0.15 A-side 1 2 1.6 ± 0.2 P 1.778 × 4 = 7.112 SCINTILLATOR 8.79 B-side 1 2 1.27 3.25 B-side A-side Pin No. Element No. Pin No. Element No. 1 1 Cathode Cathode 2 2 e1 Shield 3 3 d1 b1 4 4 c1 a1 5 5 e2 b2 6 6 d2 a2 7 7 c2 a3 8 8 e3 b3 9 9 d3 b4 10 10 c3 c4 11 11 e4 c5 12 12 d4 a4 13 13 d5 b5 14 14 e5 a5 KSPDA0146EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KSPD1052E02 Jan .2004 DN